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5 May 2008

Volume 92, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 92, 182104 (2008); http://dx.doi.org/10.1063/1.2917705 (3 pages)

Jiang Chen, Yibin Hu, Ke Xia, and Zhongshui Ma
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Polymer-dispersed liquid crystal devices using highly conducting polymers as electrodes

Jin-Yeol Kim, Hak-Yong Woo, Ji-Woong Baek, Tae-Wook Kim, Eun-Ah Song, Su-Cheol Park, and Dae-Woo Ihm

Appl. Phys. Lett. 92, 183301 (2008); http://dx.doi.org/10.1063/1.2905277 (3 pages) | Cited 8 times

Online Publication Date: 6 May 2008

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Flexible all-organic polymer-dispersed liquid crystal (PDLC) devices were fabricated by using highly transparent and conductive poly(3,4-ethylenedioxy thiophene): p-toluene sulfonate (PEDOT:PTS) films, as electrode layers. These conductive PEDOT:PTS films have a high transparency up to 80%, and possess a very low sheet resistance of 100 Ω sq−1 at 100 nm thickness. We report on the fabrication and characterization of a PDLC device using a highly conductive PEDOT:PTS for the electrodes and demonstrate its superior performance relative to that of a similar device using the indium tin oxide layer as the electrodes.
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42.79.Kr Display devices, liquid-crystal devices
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Performance of poly(3-hexylthiophene) organic field-effect transistors on cross-linked poly(4-vinyl phenol) dielectric layer and solvent effects

Kunjithapatham Sethuraman, Shizuyasu Ochiai, Kenzo Kojima, and Teruyoshi Mizutani

Appl. Phys. Lett. 92, 183302 (2008); http://dx.doi.org/10.1063/1.2918979 (3 pages) | Cited 11 times

Online Publication Date: 7 May 2008

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Bottom-contact organic field-effect transistors (OFETs) were fabricated using a polymer gate insulator cross-linked poly(4-vinyl phenol) with regioregular poly(3-hexylthiophene) (RR-P3HT) as an active layer from different organic solvents. With this polymer dielectric, a field-effect mobility of 0.084±0.006 cm2 V−1 s−1 was obtained. Solvents and interfacial properties have pronounced effects in determining the crystallinity and device performance of RR-P3HT on the polymer gate layer. Morphology correlation with the charge carrier mobility of RR-P3HT OFETs is investigated. Large nanoscale crystalline island densities of this polymer play an important role in the high charge carrier mobility of devices.
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85.30.Tv Field effect devices
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Hybrid spacer for high-efficiency white organic light-emitting diodes

Ji Hoon Seo, Il Houng Park, Gu Young Kim, Kum Hee Lee, Min Kyu Kim, Seung Soo Yoon, and Young Kwan Kim

Appl. Phys. Lett. 92, 183303 (2008); http://dx.doi.org/10.1063/1.2907190 (3 pages) | Cited 15 times

Online Publication Date: 9 May 2008

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High-efficient white organic light-emitting diodes (WOLEDs) were fabricated by using the following three different emitting materials: 4″-(2,2-diphenylvinyl)-1-[4-(N,N-diphenylamino)-styryl]-terphenyl for blue emission, fac-tris(2-phenypyridine) iridium(III) for green emission, and bis(5-benzoyl-2-phenylpyridinato-C,N)iridium(III) (acetylacetonate) for red emission. For higher efficiency, a hybrid spacer (HS) was inserted between each emissive layer (blue-red, red-green, and green-blue emissive layers). It was found that the WOLEDs using HS showed maximum power efficiency of 28.69 lm/W, maximum external quantum efficiency of 13.1%, and Commission Internationale de I’Eclairage coordinates (CIEx,y) of (x = 0.37,y = 0.37).
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85.60.Jb Light-emitting devices
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High performance light emitting transistors

Ebinazar B. Namdas, Peter Ledochowitsch, Jonathan D. Yuen, Daniel Moses, and Alan J. Heeger

Appl. Phys. Lett. 92, 183304 (2008); http://dx.doi.org/10.1063/1.2920436 (3 pages) | Cited 35 times

Online Publication Date: 9 May 2008

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Solution processed light emitting field-effect transistors (LEFETs) with peak brightness exceeding 2500 cd/m2 and external quantum efficiency of 0.15% are demonstrated. The devices utilized a bilayer film comprising a hole transporting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene) and a light emitting polymer, Super Yellow, a polyphenylenevinylene derivative. The LEFETs were fabricated in the bottom gate architecture with top-contact Ca/Ag as source/drain electrodes. Light emission was controlled by the gate voltage which controls the hole current. These results indicate that high brightness LEFETs can be made by using the bilayer film (hole transporting layer and a light emitting polymer).
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
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Inkjet printed polymer light-emitting devices fabricated by thermal embedding of semiconducting polymer nanospheres in an inert matrix

Evelin Fisslthaler, Stefan Sax, Ullrich Scherf, Gernot Mauthner, Erik Moderegger, Katharina Landfester, and Emil J. W. List

Appl. Phys. Lett. 92, 183305 (2008); http://dx.doi.org/10.1063/1.2921780 (3 pages) | Cited 11 times

Online Publication Date: 9 May 2008

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An aqueous dispersion of semiconducting polymer nanospheres was used to fabricate polymer light-emitting devices by inkjet printing in an easy-to-apply process with a minimum feature size of 20 μm. To form the devices, the electroluminescent material was printed on a nonemitting polystyrene matrix layer and embedded by thermal annealing. The process allows the printing of light-emitting thin-film devices without extensive optimization of film homogeneity and thickness of the active layer. Optical micrographs of printed device arrays, electroluminescence emission spectra, and I/V characteristics of printed ITO/PEDOT:PSS/PS/SPN/Al devices are presented.
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85.60.Jb Light-emitting devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
81.16.-c Methods of micro- and nanofabrication and processing
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Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics

Se Hyun Kim, Jaeyoung Jang, Hayoung Jeon, Won Min Yun, Sooji Nam, and Chan Eon Park

Appl. Phys. Lett. 92, 183306 (2008); http://dx.doi.org/10.1063/1.2924772 (3 pages) | Cited 15 times

Online Publication Date: 9 May 2008

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The influence of hydroxyl groups on the hysteresis of pentacene field-effect transistors (FETs) and metal-insulator-semiconductor diodes containing poly(4-vinyl phenol) and poly(4-vinyl phenol-co-methyl methacrylate) (PVP-PMMA) gate dielectrics was investigated. The electrical characteristics and Fourier transform infrared spectroscopy measurements show that hysteresis is intimately related to the presence of free O–H groups in the polymer gate dielectrics. The methyl methacryl moieties in PVP-PMMA minimize residual water in the polymer and form hydrogen bonds with the hydroxyl groups, thus reducing the number of free O–H species. Therefore, pentacene FETs and inverters using PVP-PMMA gate dielectrics exhibit high, hysteresis-free performances.
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85.30.Tv Field effect devices
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