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Applied Physics Letters / Volume 92 / Issue 19 / MAGNETISM AND SUPERCONDUCTIVITY
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Appl. Phys. Lett. 92, 192502 (2008); doi:10.1063/1.2927481 (3 pages)

Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs

S. Mack, R. C. Myers, J. T. Heron, A. C. Gossard, and D. D. Awschalom

Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA

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(Received 21 March 2008; accepted 15 April 2008; published online 13 May 2008)

Heavily alloyed, 100 nm Ga1−xMnxAs (x>0.1) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in a narrow range of stoichiometric growth conditions. In contrast to a prediction of the Zener model of hole-mediated ferromagnetism, the Curie temperature of the stoichiometric material is independent of x (for x>0.1), while substitutional Mn content is proportional to x within a large window of growth conditions.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

Curie temperature, ferromagnetic materials, gallium arsenide, gallium compounds, magnetic semiconductors, magnetic thin films, manganese compounds, molecular beam epitaxial growth, semiconductor growth, stoichiometry

PACS

  • 75.70.-i

    Magnetic properties of thin films, surfaces, and interfaces

  • 75.30.Kz

    Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

  • 68.55.ag

    Semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 75.50.Pp

    Magnetic semiconductors

ARTICLE DATA

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http://link.aip.org/link/doi/10.1063/1.2927481

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
Electrical, magnetic, and structural dependence on As:Ga for a 100 nm thick Ga0.84Mn0.16As film grown without rotation. Inset: substrate and source geometry. (a) Room temperature longitudinal (σxx) and Hall (σxy) conductivities, (b) Curie temperature (TC) and saturation moment (Msat) at 5 K, and (c) lattice constant (aGaMnAs) for different As:Ga. Stoichiometric region is shaded gray. Inset: σxx vs anneal time, right axis is the anneal temperature. (d) HRXRD scans along ω-2θ near the (004) substrate peak measured on stoichiometric (as-grown and annealed) and As-rich samples labeled in the figure.

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FIG.2
Variation in ferromagnetism and magnetotransport due to stoichiometry and postgrowth annealing for a 100 nm thick Ga0.84Mn0.16As film grown without rotation. (a) Magnetic moment (M) and σxx vs temperature (T). (b) M vs magnetic field (H) hysteresis loops from the stoichiometric, annealed sample at various temperatures near TC. (c) Hysteresis loops at 5 K. (d) Resistivity (ρxx) at 10 K vs H. MR at 14 T is labeled in the figure. Hall resistivity (ρxy) vs H for the annealed, stoichiometric sample.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) TC vs x for stoichiometric samples of Ga1−xMnxAs for 0<x<0.22 from many separate nonrotated growth runs. Data are shown both for as-grown and optimally annealed samples. Lines are guides to the eye. (b) Lattice constant (aGaMnAs) vs x from HRXRD scans as shown in Fig. 1d. Using the model proposed by Masek et al. (Ref. 17), linear fits to our data indicate a constant fraction of interstitials (z/x, labeled in the figure) for x ⩽ 0.16. The blue data are for increasingly As-rich material, along the arrow.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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