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12 May 2008

Volume 92, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 92, 193301 (2008); http://dx.doi.org/10.1063/1.2920199 (3 pages)

Wei Chen, Hong Liang Zhang, Han Huang, Lan Chen, and Andrew Thye Shen Wee
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Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films

Jayanta Parui and S. B. Krupanidhi

Appl. Phys. Lett. 92, 192901 (2008); http://dx.doi.org/10.1063/1.2928230 (3 pages) | Cited 27 times

Online Publication Date: 14 May 2008

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Antiferroelectric lanthanum-modified PbZrO3 thin films with La contents between 0 and 6 at. % have been deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (Pmax) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum Pmax ( ∼ 0.54 C/m2 at ∼ 60 MV/m) as well as a maximum W ( ∼ 14.9 J/cc at ∼ 60 MV/m) have been achieved on 5% La modification. Both Pmax and W have been found to be strongly dependent on La-induced crystallographic orientations.
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73.61.Ng Insulators
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Polarization rotation transitions in anisotropically strained SrTiO3 thin films

A. Vasudevarao, Sava Denev, Michael D. Biegalski, Yulan Li, Long-Qing Chen, Susan Trolier-McKinstry, Darrell G. Schlom, and Venkatraman Gopalan

Appl. Phys. Lett. 92, 192902 (2008); http://dx.doi.org/10.1063/1.2921789 (3 pages) | Cited 6 times

Online Publication Date: 15 May 2008

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Commensurately strained epitaxial SrTiO3 thin films on a GdScO3 substrate with anisotropic in-plane tensile strains of 1.46% and 1.59% were grown. By using optical second harmonic generation and polarization measurements, a ferroelectric transition from a tetragonal 4/mmm phase to a ferroelectric mm2 phase at ∼ 400 K and an antiferrodistortive transition to a multiferroic phase at 150–175 K are observed, which are in agreement with thermodynamic calculations. In addition, a series of polarization rotation transitions between 〈100〉p to 〈l00〉p (0<l<1) is observed in the 4–400 K temperature range.
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77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Capacitive extensometry for transient strain analysis of dielectric elastomer actuators

Christoph Keplinger, Martin Kaltenbrunner, Nikita Arnold, and Siegfried Bauer

Appl. Phys. Lett. 92, 192903 (2008); http://dx.doi.org/10.1063/1.2929383 (3 pages) | Cited 26 times

Online Publication Date: 15 May 2008

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Dielectric elastomer actuators (DEAs) are promising structural units for artificial muscles and robotic elements. Understanding the safe and failure mode regimes of such DEAs is essential for controlling the actuator. We develop an electrical characterization technique for obtaining information on the transient strain in the actuator and analyze the behavior of the actuator in safe and failure operation regimes, in particular in the pull-in instability mode. Additionally, the technique allows the strain-dependent measurement of the electrode resistance. The current measurement based technique can be also applied for actuator control with feedback loops.
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84.32.Tt Capacitors
07.07.Tw Servo and control equipment; robots

Polarity dependent breakdown of the high-κ/SiOx gate stack: A phenomenological explanation by scanning tunneling microscopy

D. S. Ang, Y. C. Ong, S. J. O’Shea, K. L. Pey, C. H. Tung, T. Kawanago, K. Kakushima, and H. Iwai

Appl. Phys. Lett. 92, 192904 (2008); http://dx.doi.org/10.1063/1.2926655 (3 pages) | Cited 1 time

Online Publication Date: 15 May 2008

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From scanning tunneling microscopy, we present unambiguous evidence of thermally induced localized conduction paths exhibiting an asymmetrical conduction property in the high-κ gate stack. The tunneling current under gate injection biasing is found to be much larger than that under substrate injection biasing after a 700 °C postdeposition anneal, i.e., the localized paths exhibit a much lower resistance under gate injection biasing. This finding provides a phenomenological explanation for the polarity dependent breakdown of the high-κ gate stack as observed from electrical stressing of large-area metal-oxide-semiconductor capacitors.
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73.40.Gk Tunneling
81.40.Gh Other heat and thermomechanical treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors

Low leakage current and enhanced ferroelectric properties of Ti and Zn codoped BiFeO3 thin film

G. D. Hu, S. H. Fan, C. H. Yang, and W. B. Wu

Appl. Phys. Lett. 92, 192905 (2008); http://dx.doi.org/10.1063/1.2918130 (3 pages) | Cited 61 times

Online Publication Date: 15 May 2008

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BiFeO3 (BFO), Ti(2%)-doped BFO (BFTO), Zn(2%)-doped BFO (BFZO), as well as Ti (1%) and Zn (1%) codoped BFO (BFTZO) films were deposited on Pt/Ti/SiO2/Si substrates by using a metal organic decomposition process. Well saturated P-E hysteresis loops can be obtained in BFZO and BFTZO films due to their lower leakage currents compared to those of BFO and BFTO films. In comparison with BFZO film, BFTZO film exhibits a much larger remanent polarization (Pr ∼ 84 μC/cm2), a lower coercive field (2Ec ∼ 570 kV/cm), as well as stronger charge-retaining ability and fatigue resistance. These phenomena can be explained based on the formation of the defect complexes between the acceptors and oxygen vacancies in the films.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
61.72.jd Vacancies

Electric field control of the magnetic state in BiFeO3 single crystals

Seoungsu Lee, W. Ratcliff, II, S-W. Cheong, and V. Kiryukhin

Appl. Phys. Lett. 92, 192906 (2008); http://dx.doi.org/10.1063/1.2930678 (3 pages) | Cited 32 times

Online Publication Date: 16 May 2008

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Single crystals of multiferroic BiFeO3 were investigated using neutron scattering. Application of an electric field reversibly switches ferroelastic domains, inducing changes in the magnetic structure which follows rotation of the structural domains. In addition, electric fields can be used to control the populations of the equivalent magnetic domains within a single ferroelastic domain, possibly via field-induced strain.
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77.80.Dj Domain structure; hysteresis
75.60.Ch Domain walls and domain structure
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.80.+q Magnetomechanical effects, magnetostriction
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
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