APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 92 / Issue 2 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 92, 021101 (2008); http://dx.doi.org/10.1063/1.2830696 (3 pages)

Physical properties and efficiency of GaNP light emitting diodes

J. Chamings1, S. Ahmed1, S. J. Sweeney1, V. A. Odnoblyudov2, and C. W. Tu2

1Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
2Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407, USA

View MapView Map

(Received 9 October 2007; accepted 7 December 2007; published online 14 January 2008)

GaNP/GaP is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP/GaN0.006P0.994/GaP LED structures are presented. Below ∼ 110 K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +1.6 meV/kbar, substantially lower than the Γ band gap of GaP (+9.5 meV/kbar). Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.

© 2008 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

electroluminescent devices, gallium compounds, high-pressure effects, III-V semiconductors, light emitting diodes, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2830696

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    R. Z. Bachrach, W. B. Joyce, and R. W. Dixon, J. Appl. Phys. 44, 5458 (1973)JAPIAU000044000012005458000001.

    W. Shan, W. Walukiewicz, K. M. Yu, J. Wu, J. W. Ager, III, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 76, 3251 (2000)APPLAB000076000022003251000001.

    P. R. C. Kent and A. Zunger, Phys. Rev. B 64, 115208 (2001).

    S. Adachi, J. Appl. Phys. 54, 1844 (1983)JAPIAU000054000004001844000001.

    W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999).

    P. J. Klar, H. Gruning, W. Heimbrodt, J. Koch, F. Hohnsdorf, W. Stolz, P. M. A. Vicente, and J. Camassel, Appl. Phys. Lett. 76, 3439 (2000)APPLAB000076000023003439000001.

    I. A. Buyanova, M. Izadifard, A. Kasic, H. Arwin, W. M. Chen, H. P. Xin, Y. G. Hong, and C. W. Tu, Phys. Rev. B 70, 085209 (2004).

    B. Gil, M. Baj, J. Camassel, H. Mathieu, C. Benoit à la Guillaume, N. Mestres, and J. Pascual, Phys. Rev. B 29, 3398 (1984).

    P. Perlin, P. Wisniewski, C. Skierbiszewski, T. Suski, E. Kaminska, S. G. Subramanya, E. R. Weber, D. E. Mars, and W. Walukiewicz, Appl. Phys. Lett. 76, 1279 (2000)APPLAB000076000010001279000001.

    Y. Zhang, B. Fluegel, A. Mascarenhas, H. P. Xin, and C. W. Tu, Phys. Rev. B 62, 4493 (2000).

    M. Gungerich, P. J. Klar, W. Heimbrodt, G. Weiser, J. F. Geisz, C. Harris, A. Lindsay, and E. P. O'Reilly, Phys. Rev. B 74, 241202 (2006).


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Physical properties and efficiency of GaNP light emitting diodes
  2. Temperature dependence of the interface moments in Co2MnSi thin films
  3. Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs
  4. Highly reproducible fabrication of back-gated GaAs/AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer
  5. A scanning near-field middle-infrared microscope for the study of objects submerged in water
Go to AIP Home
Copyright © American Institute of Physics
close