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Applied Physics Letters / Volume 92 / Issue 2 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 92, 021102 (2008); http://dx.doi.org/10.1063/1.2832666 (3 pages)

Time-resolved photoluminescence of n-doped SrTiO3

A. Rubano, D. Paparo, M. Radović, A. Sambri, F. Miletto Granozio, U. Scotti di Uccio, and L. Marrucci

CNR-INFM Coherentia and Dipartimento di Scienze Fisiche, Università di Napoli “Federico II,” Complesso di Monte S. Angelo, via Cintia, 80126 Napoli, Italy

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(Received 10 October 2007; accepted 18 December 2007; published online 14 January 2008)

Following the recent surge of interest in n-doped strontium titanate as a possible blue light emitter, a time-resolved photoluminescence analysis was performed on nominally pure, Nb-doped and oxygen-deficient single-crystal SrTiO3 samples. The doping effects on both the electronic states involved in the transition and the decay mechanism are respectively analyzed by comparing the spectral and dynamic features and the yields of the emission. Our time-resolved analysis, besides shedding some light on the basic recombination mechanisms acting in these materials, sets the intrinsic bandwidth limit of the proposed blue light emitting optoelectronic devices made of Ti-based perovskites heterostructures in the gigahertz range.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

electron-hole recombination, niobium, photoluminescence, semiconductor doping, semiconductor materials, strontium compounds, time resolved spectra

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2832666

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    K. A. Muller, Phys. Rev. B 19, 3593 (1979).

    M. Itoh, R. Wang, Y. Inaguma, T. Yamaguchi, Y.-J. Shan, and T. Nakamura, Phys. Rev. Lett. 82, 3540 (1999).

    O. N. Tufte, Phys. Rev. 155, 796 (1967).

    J. F. Schooley, Phys. Rev. Lett. 12, 474 (1964).

    T. Higuchi, T. Tsukamoto, K. Kobayashi, S. Yamaguchi, Y. Ishiwata, N. Sata, K. Hiramoto, M. Ishigame, and S. Shin, Phys. Rev. B 65, 033201 (2001).

    D. Kan, R. Kanda, Y. Kanemitsu, Y. Shimakawa, M. Takano, T. Terashima, and A. Ishizumi, Appl. Phys. Lett. 88, 191916 (2006)APPLAB000088000019191916000001.

    A. Rubano, D. Paparo, F. Miletto, U. Scotti di Uccio, and L. Marrucci, Phys. Rev. B 76, 125115 (2007).

    D. A. Crandles, B. Nicholas, C. Dreher, C. C. Homes, A. W. McConnell, B. P. Clayman, W. H. Gong, and J. E. Greedan, Phys. Rev. B 59, 12842 (1999).

    S. Kimura, Phys. Rev. B 51, 11049 (1995).

    Z. Liu, Appl. Phys. Lett. 90, 201104 (2007)APPLAB000090000020201104000001;, J. Hiltunen, D. Seneviratne, R. Sun, M. Stolfi, H. L. Tuller, J. Lappalainen, and V. Lantto, Appl. Phys. Lett. 89, 242904 (2006)APPLAB000089000024242904000001.


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