Measurement of semiconductor waveguide optical properties in the midinfrared wavelength range

Peter, E.; Laurent, S.; Sirtori, C.; Carras, M.; Robbo, J. A.; Garcia, M.; Marcadet, X.

doi:doi:10.1063/1.2830829

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Time-resolved photoluminescence of n-doped SrTiO₃

Following the recent surge of interest in n-doped strontium titanate as a possible blue light emitter, a time-resolved photoluminescence analysis was performed on nominally pure, Nb-doped and oxygen-deficient single-crystal SrTiO3 samples. The doping effects on both the electronic states involved in the transition and the decay mechanism are respectively analyzed by comparing the spectral and dynamic features and the yields of the emission. Our time-resolved analysis, besides shedding some ligh...

Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide lasers

Self-sustained pulsations in the output power of metal-organic chemical vapor deposition grown ridge-waveguide lasers with InGaAs quantum dot active region are reported. The characteristics of the output power pulsations (range, frequency, and modulation depth) are presented. The origin of the pulsations is explained in terms of the properties of the quantum dot active region.

We propose a technique based on Fabry-Pérot fringes to analyze, in a broad wavelength range, the waveguide properties of semiconductor lasers in the midinfrared spectrum. This technique has been applied to strain-balanced Ga_0.32In_0.68As/Al_0.64In_0.36As quantum cascade lasers, with a double phonon active region, in order to determine propagation losses and the effective index between 2.5 and 8 μm wavelength. These results are in good agreement with the values obtained using another method.

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KEYWORDS and PACS

Keywords

Fabry-Perot interferometers, gallium arsenide, gallium compounds, III-V semiconductors, indium compounds, laser beams, laser variables measurement, light interferometry, optical losses, optical testing, phonons, quantum cascade lasers, refractive index, waveguide lasers

PACS

42.55.Px

Semiconductor lasers; laser diodes
42.60.By

Design of specific laser systems
07.60.Ly

Interferometers
42.60.Jf

Beam characteristics: profile, intensity, and power; spatial pattern formation

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2830829

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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