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Applied Physics Letters / Volume 92 / Issue 2 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 92, 021105 (2008); http://dx.doi.org/10.1063/1.2834373 (3 pages)

A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes

Hon-Yi Kuo1, Shui-Jinn Wang1, Pei-Ren Wang1, Kai-Ming Uang2, Tron-Min Chen2, and Hon Kuan3

1Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China
2Department of Electrical Engineering, Wu Feng Institute of Technology, Chiayi 621, Taiwan, Republic of China
3Optoelectronics Center of Far East University, Tainan 744, Taiwan, Republic of China

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(Received 1 October 2007; accepted 17 December 2007; published online 14 January 2008)

Through the use of tin (Sn) based solder balls and patterned laser lift-off technique, a metal substrate technology was proposed for the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs). Advantages including reserving the merits of metallic substrate and simplifying the fabrication processes of vertical-structured GaN-based LEDs were demonstrated. As compared to conventional sapphire substrate GaN-based LEDs, the fabricated VM-LEDs with an emission area of 620×620 μm2 show an increase in light output power about 145.36% at 350 mA with a significant decrease in forward voltage from 4.51 to 3.46 V.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, light emitting diodes

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2834373

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    T. Kuroda, A. Tackeuchi, and T. Sota, Appl. Phys. Lett. 76, 3753 (2000)APPLAB000076000025003753000001.


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