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Applied Physics Letters / Volume 92 / Issue 2 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 92, 021109 (2008); http://dx.doi.org/10.1063/1.2825465 (3 pages)

Very low transparency currents in double quantum well InGaAs semiconductor lasers with δ-doped resonant tunneling

D. Fekete1, M. Yasin1, A. Rudra2, and E. Kapon2

1Department of Physics and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel
2Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Physics of Nanostructures, CH-1015 Lausanne, Switzerland

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(Received 6 May 2007; accepted 28 November 2007; published online 14 January 2008)

It is demonstrated that n-type δ-doped resonant tunneling double quantum well (QW) lasers operated close to resonance exhibit an extremely low transparency current density of 14 A/cm2 per QW. This suggests that the threshold current is almost identical to that of the best reported single QW device without δ doping and yet the modal gain is almost double. The low transparency current density is mainly due to the enhanced coupling between the QWs.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, indium compounds, quantum well lasers, resonant tunnelling

PACS

  • 71.55.Eq

    III-V semiconductors

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 85.75.Mm

    Spin polarized resonant tunnel junctions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2825465

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    H. Wang, A. D. Vandermeer, and D. T. Cassidy, J. Appl. Phys. 100, 093104 (2006)JAPIAU000100000009093104000001.


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