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Applied Physics Letters / Volume 92 / Issue 2 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 92, 021111 (2008); http://dx.doi.org/10.1063/1.2824846 (3 pages)

Bright, low voltage europium doped gallium oxide thin film electroluminescent devices

P. Wellenius, A. Suresh, and J. F. Muth

Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27606, USA

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(Received 13 November 2007; accepted 26 November 2007; published online 15 January 2008)

Europium doped gallium oxide thin film electroluminescent devices with bright, red emission (611 nm) and relatively low threshold voltages of 60 V were produced using pulsed laser deposition. The use of transparent conducting electrodes of amorphous InGaZnO on transparent aluminum titanium oxide/indium tin oxide/7059 Corning glass substrates resulted in a device that is transparent throughout the visible spectrum. At 100 V, with 1 kHz excitation, the luminance was 221 cd/m2. The Sawyer-Tower circuit analysis and time dependent emission measurements suggest that the charge trapping at the aluminum titanium oxide/Ga2O3:Eu interface plays an important role in producing efficient emission.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

electroluminescent devices, europium, gallium compounds, semiconductor thin films, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2824846

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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