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Applied Physics Letters / Volume 92 / Issue 2 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 92, 021113 (2008); http://dx.doi.org/10.1063/1.2835051 (3 pages)

Luminescence enhancement by Si ring resonator structures on silicon on insulator

Shiyun Lin, Yosuke Kobayashi, Yasuhiko Ishikawa, and Kazumi Wada

Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

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(Received 9 November 2007; accepted 24 December 2007; published online 15 January 2008)

Si ring resonators on silicon on insulator show at least 50 times stronger photoluminescence (PL) with sharp peaks than the surrounding Si slab region at room temperature. The frequencies of the PL peaks are well explained by the resonant frequencies of the rings and the intensities are by the ratio of the quality factors of the PL peaks and the modal volumes of resonances. This suggests that the Purcell effect should be responsible for the enhancement.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, integrated optics, optical resonators, photoluminescence, Q-factor, silicon, silicon-on-insulator

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2835051

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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