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Appl. Phys. Lett. 92, 021118 (2008); http://dx.doi.org/10.1063/1.2819614 (3 pages)

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

F. S. Al-Ajmi1, R. M. Kolbas1, J. C. Roberts2, P. Rajagopal2, J. W. Cook, Jr.2, E. L. Piner2, and K. J. Linthicum2

1Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911, USA
2Nitronex Corporation, 2305 Presidential Drive, Durham, North Carolina 27703, USA

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(Received 28 July 2007; accepted 9 November 2007; published online 17 January 2008)

Stimulated emission and laser action with well developed longitudinal optical modes from an Al0.13Ga0.87N/GaN double heterostructure with a 25 nm GaN active layer grown on a silicon substrate by metal-organic chemical vapor deposition is demonstrated. Lasing was observed from cleaved platelets at room temperature with well resolved Fabry-Pérot modes at a wavelength as short as 368 nm at room temperature. A clear threshold was observed in the plot of the emission intensity versus the pumping power at both 77 K and room temperature. The effective index of refraction during laser operation was measured to be 2.65.

© 2008 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.66.Fd

    III-V semiconductors

  • 78.45.+h

    Stimulated emission

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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