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Appl. Phys. Lett. 92, 021118 (2008); http://dx.doi.org/10.1063/1.2819614 (3 pages)
Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate
(Received 28 July 2007; accepted 9 November 2007; published online 17 January 2008)
© 2008 American Institute of Physics
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