Thermal annealing effects on intersubband transitions in (CdS/ZnSe)/BeTe quantum wells

Li, B. S.; Akimoto, R.; Shen, A.

doi:doi:10.1063/1.2835050

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Room-temperature intracavity difference-frequency generation in butt-joint diode lasers

We observe room-temperature intracavity difference-frequency generation in the mid-infrared range in a butt-joint GaAs/InGaAs/InGaP quantum-well laser diode which supports lasing at two closely spaced wavelengths in the near-infrared range around 1 μm. We employ a special asymmetric waveguide design and a low-doped substrate that minimize midinfrared losses and phase mismatch for the difference-frequency generation process.

Simulated [111] Si–SiGe terahertz quantum cascade laser

The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon, and Coulombic interactions. We predict gain greater than 40 cm−1 and a threshold current density of 70 A/cm2.

The authors report the study of thermal annealing effects on intersubband transition (ISB-T) properties of (CdS/ZnSe)/BeTe quantum wells (QWs). With the increase of annealing temperature, the ISB absorption wavelength shifts to lower energy and absorption intensity gradually decreases. The dependence of linewidths on the annealing temperature is more complicated and shows opposite trends for the QWs with different well thicknesses. Photoinduced ISB-T measurements indicate that the decrease of ISB absorption intensity results from the loss of free carriers in the well layers. The change of structural properties obtained from x-ray diffraction measurements were used to explain the observed change of ISB absorption characteristics.

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KEYWORDS and PACS

Keywords

annealing, beryllium compounds, cadmium compounds, Fourier transform spectra, II-VI semiconductors, infrared spectra, semiconductor quantum wells, spectral line breadth, spectral line shift, X-ray diffraction, zinc compounds

PACS

78.67.De

Quantum wells
78.30.Fs

III-V and II-VI semiconductors
61.72.Cc

Kinetics of defect formation and annealing
81.40.Tv

Optical and dielectric properties related to treatment conditions
68.65.Fg

Quantum wells

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2835050

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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