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Appl. Phys. Lett. 92, 021124 (2008); http://dx.doi.org/10.1063/1.2836023 (3 pages)

Simulated [111] Si–SiGe terahertz quantum cascade laser

L. Lever, A. Valavanis, Z. Ikonić, and R. W. Kelsall

Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

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(Received 28 November 2007; accepted 29 December 2007; published online 18 January 2008)

The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon, and Coulombic interactions. We predict gain greater than 40 cm−1 and a threshold current density of 70 A/cm2.

© 2008 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 68.35.Ct

    Interface structure and roughness

  • 63.20.kd

    Phonon-electron interactions

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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