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Appl. Phys. Lett. 92, 021901 (2008); doi:10.1063/1.2832635 (3 pages)

Photoluminescence from a single InGaAs epitaxial quantum rod

G. Sęk1, P. Podemski1, J. Misiewicz1, L. H. Li2, A. Fiore2, and G. Patriarche3

1Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
2Ecole Polytechnique Fédérale de Lausanne, Institute of Quantum Electronics and Photonics, Station 3, CH-1015 Lausanne, Switzerland
3Laboratoire de Photonique et de Nanostrucures, Centre National de la Recherche Scientifique, Route de Nozay, F-91460 Marcoussis, France

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(Received 12 November 2007; accepted 17 December 2007; published online 14 January 2008)

Microphotoluminescence (μ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the μ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2 meV.

© 2008 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 71.35.-y

    Excitons and related phenomena

  • 78.55.Cr

    III-V semiconductors

  • 78.67.Hc

    Quantum dots

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 73.21.Cd

    Superlattices

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

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