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Applied Physics Letters / Volume 92 / Issue 20 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 92, 201918 (2008); http://dx.doi.org/10.1063/1.2929746 (3 pages)

Raman spectra of epitaxial graphene on SiC(0001)

J. Röhrl, M. Hundhausen, K. V. Emtsev, Th. Seyller, R. Graupner, and L. Ley

Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, 91058 Erlangen, Germany

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(Received 20 March 2008; accepted 26 April 2008; published online 23 May 2008)

We present Raman spectra of epitaxial graphene layers grown on 6math×6math reconstructed silicon carbide surfaces during annealing at elevated temperature. In contrast to exfoliated graphene a significant phonon hardening is observed. We ascribe that phonon hardening to a minor part to the known electron transfer from the substrate to the epitaxial layer, and mainly to mechanical strain that builds up when the sample is cooled down after annealing. Due to the larger thermal expansion coefficient of silicon carbide compared to the in-plane expansion coefficient of graphite this strain is compressive at room temperature.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, carbon, elemental semiconductors, internal stresses, narrow band gap semiconductors, phonons, Raman spectra, semiconductor epitaxial layers, thermal expansion

PACS

  • 78.66.Db

    Elemental semiconductors and insulators

  • 78.30.Am

    Elemental semiconductors and insulators

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 63.22.-m

    Phonons or vibrational states in low-dimensional structures and nanoscale materials

  • 68.60.Bs

    Mechanical and acoustical properties

  • 68.60.Wm

    Other nonelectronic physical properties

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2929746

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    Z. H. Ni, W. Chen, X. F. Fan, J. L. Kuo, T. Yu, A. T. S. Wee, and Z. X. Shen, Phys. Rev. B 77, 115416 (2008).

    P. Lauffer, K. V. Emtsev, R. Graupner, Th. Seyller, and L. Ley, Phys. Rev. B 77, 155426 (2008).

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    F. Tuinstra and L. J. Koenig, J. Chem. Phys. 53, 1126 (1970)JCPSA6000053000003001126000001.


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