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Applied Physics Letters / Volume 92 / Issue 20 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 92, 203305 (2008); http://dx.doi.org/10.1063/1.2936837 (3 pages)

Effects of interlayers on phosphorescent blue organic light-emitting diodes

Jonghee Lee, Jeong-Ik Lee, Ki-Im Song, Su Jin Lee, and Hye Yong Chu

Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Republic of Korea

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(Received 21 March 2008; accepted 4 May 2008; published online 22 May 2008)

We demonstrate that the electroluminescence efficiencies of blue organic light-emitting diodes can be significantly enhanced by the incorporation of interlayers at the hole transporting layer (HTL)/emitting layer (EML) and/or EML/electron transporting layer (ETL) interfaces. Blue light-emitting iridium(III)bis(4,6-difluorophenyl)-pyridinato-N,C2′) picolinate was doped in an m-bis-(triphenylsilyl)benzene (UGH3) host and hole transporting wide band gap materials were introduced between the HTL and the EML as interlayers in order to block triplet exciton quenching and reduce electron overflow. The effects of adding a second undoped UGH3 interlayer at the EML/ETL interface were also studied. When the appropriate interlayers were added, the device performances were found to be dramatically enhanced, with peak external quantum and power efficiencies of 20.1% and 29.2 lm/W.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

electroluminescent devices, organic light emitting diodes, organic semiconductors, phosphorescence, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2936837

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
Schematic diagrams of the structures of the blue PHOLEDs tested in this study.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Results for types A and B (CBP, mCP, and TcTa interlayers) devices: (a) normalized electroluminescence spectra (inset: energy level diagrams for the materials used in this study); (b) external quantum efficiency vs current density.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Current density vs voltage (I-V) characteristics of type C devices (interlayer = mCP (10 nm) and x (UGH3) = 0, 2.5, 5, and 10 nm) (inset: external quantum efficiency (EQE) vs current density). (b) EQE vs current density (type D devices; y(NPB)+z(mCP) = 40 nm). (Inset: brightness versus voltage (L-V) characteristics).

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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