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19 May 2008

Volume 92, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 92, 202101 (2008); http://dx.doi.org/10.1063/1.2927379 (3 pages)

Jasmin Aghassi, Matthias H. Hettler, and Gerd Schön
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Tuning the field in a microwave resonator faster than the photon lifetime

M. Sandberg, C. M. Wilson, F. Persson, T. Bauch, G. Johansson, V. Shumeiko, T. Duty, and P. Delsing

Appl. Phys. Lett. 92, 203501 (2008); http://dx.doi.org/10.1063/1.2929367 (3 pages) | Cited 32 times

Online Publication Date: 19 May 2008

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We have fabricated and characterized tunable superconducting transmission line resonators. To change the resonance frequency, we modify the boundary condition at one end of the resonator through the tunable Josephson inductance of a superconducting quantum interference device. We demonstrate a large tuning range (several hundred megahertz), high quality factors (104), and that we can change the frequency of a few-photon field on a time scale orders of magnitude faster than the photon lifetime of the resonator. This demonstration has implications in a variety of applications.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
85.25.Am Superconducting device characterization, design, and modeling
85.25.Cp Josephson devices

Molecular-beam epitaxial growth of III–V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication

Donghun Choi, Eunji Kim, Paul C. McIntyre, and James S. Harris

Appl. Phys. Lett. 92, 203502 (2008); http://dx.doi.org/10.1063/1.2929386 (3 pages) | Cited 6 times

Online Publication Date: 19 May 2008

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We describe the fabrication of III–V metal-oxide-semiconductor (MOS) devices on Ge/Si virtual substrates using molecular-beam epitaxy. Migration-enhanced epitaxy and low temperature normal GaAs growth produced a sufficiently smooth surface to deposit gate oxides. A 300 nm thick GaAs buffer layer was grown, followed by a 10 nm growth of In0.2Ga0.8As high mobility channel layer. An 8.5 nm thick Al2O3 layer was deposited ex situ by atomic-layer deposition. Capacitance-voltage (C-V) characteristics show the unpinning of Fermi level. This work suggests this materials combination as a promising candidate for the design of advanced, nonclassical complementary MOS and optoelectronic devices on Si substrates.
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85.30.Tv Field effect devices
84.32.Tt Capacitors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electron programing and hole erasing in silicon nanocrystal Flash memories with fin field-effect transistor architecture

D. Corso, G. Muré, S. Lombardo, G. Ciná, E. Tripiciano, C. Gerardi, and E. Rimini

Appl. Phys. Lett. 92, 203503 (2008); http://dx.doi.org/10.1063/1.2920204 (3 pages) | Cited 4 times

Online Publication Date: 19 May 2008

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We investigated the feasibility of electron programing and hole erasing in silicon nanocrystal Flash memory cells with fin field-effect transistor architecture having ultrashort channels (90 nm). Experiments show that, by choosing a proper program/erase condition, very large threshold voltage windows can be achieved, compatible with the needs of multilevel cells. These performances are coupled to excellent retention at high temperature. The obtained results evidence that hole trapping is less affected by electric field and temperature stress compared to electron trapping. Qualitative explanations for this behavior are given.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Temperature dependence of polarized electroluminescence side emission from (0001)-oriented blue and violet InGaN/GaN light-emitting diodes

Xiaozhang Du, Hai Lu, Ping Han, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 92, 203504 (2008); http://dx.doi.org/10.1063/1.2931034 (3 pages) | Cited 1 time

Online Publication Date: 21 May 2008

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Temperature dependent polarized electroluminescence from (0001)-oriented blue and violet InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) has been investigated. The viewing angle dependent light emission is found to be highly polarized perpendicular to the electrical field in the MQWs. The polarization ratio of 410 nm LEDs exhibits monotonic decrease with increasing temperature from room temperature to 200 °C. In contrast, the polarization ratio of 470 nm LEDs initially increases with increasing temperature and then decreases at higher temperatures. This result suggests that carrier localization in quantum-dot-like structures could relax the polarization-related optical selection rule. Meanwhile, polarization ratios of side emission from both LEDs decrease at elevated injection current levels.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

D. Shahrjerdi, T. Akyol, M. Ramon, D. I. Garcia-Gutierrez, E. Tutuc, and S. K. Banerjee

Appl. Phys. Lett. 92, 203505 (2008); http://dx.doi.org/10.1063/1.2931708 (3 pages) | Cited 16 times

Online Publication Date: 21 May 2008

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In this letter, we report fabrication of self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor (MOS) field-effect transistors with atomic layer deposition of Al2O3 gate dielectric directly on GaAs substrates using a simple ex situ wet clean of GaAs. Thermal stability of the gate stack was examined by monitoring the frequency dispersion behavior of GaAs MOS capacitors under different annealing conditions. A maximum drive current of ∼ 4.5 μA/μm was obtained for a gate length of 20 μm at a gate overdrive of 2.5 V. The threshold voltage and subthreshold slope were determined to be ∼ 0.4 V and ∼ 145 mV/dec from the corresponding Id-Vg characteristics.
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85.30.Tv Field effect devices
84.32.Tt Capacitors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh Other heat and thermomechanical treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Surface recombination and facet heating in high-power diode lasers

Mathias Ziegler, Vadim Talalaev, Jens W. Tomm, Thomas Elsaesser, Peter Ressel, Bernd Sumpf, and Götz Erbert

Appl. Phys. Lett. 92, 203506 (2008); http://dx.doi.org/10.1063/1.2932145 (3 pages) | Cited 6 times

Online Publication Date: 22 May 2008

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Surface recombination velocities and surface temperatures at front facets of standard broad-area lasers emitting at 808 nm were investigated by time-resolved two-color photoluminescence and micro-Raman spectroscopy. Surface recombination velocities in the range between <105 and 106 cm/s are determined for devices with tailored surface properties. The results clearly show that increased surface recombination velocities are accompanied by increased facet temperatures. Reabsorption of light generated in the diode lasers leads to an additional enhancement of facet heating for surfaces of minor structural quality. The methodological approach presented here paves the way for improved analytical access to diode laser facet properties.
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42.55.Px Semiconductor lasers; laser diodes
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.jd Time resolved luminescence

AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition

S. Senda, H. Jiang, and T. Egawa

Appl. Phys. Lett. 92, 203507 (2008); http://dx.doi.org/10.1063/1.2936289 (3 pages) | Cited 18 times

Online Publication Date: 22 May 2008

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AlInN, one of the III-nitride semiconductors, is expected to find its application as transistors, sensors, light emitters of electronic, and optoelectronic devices. When the lattice alignment of AlInN is made similar to GaN, a great deal of crack-free AlInN film growth is possible on GaN layers. We have successfully grown AlInN and AlGaN films by metal organic chemical vapor deposition. The structural analysis for the metal organic chemical vapor deposition grown films show that they have the same structure and were used to produce AlInN and AlGaN-based ultraviolet (UV) photodiodes. This paper describes the growth and fabrication of AlGaN and AlInN-based UV photodiodes and analyzes their device performance. For an AlInN, the peak responsivity at zero bias was measured to be 140 mA/W at 230 nm, corresponding to an external quantum efficiency of 74%. AlInN was found to be more suitable than AlGaN for UV photodiodes with a cutoff wavelength in the UV-C range.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Plasma dispersion effect in heavily doped antimony-based passive optical waveguides

C. G. Lim

Appl. Phys. Lett. 92, 203508 (2008); http://dx.doi.org/10.1063/1.2936298 (3 pages) | Cited 2 times

Online Publication Date: 22 May 2008

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Theoretical analysis showed that the refractive-index change induced by plasma dispersion effect in heavily doped antimony-based optical waveguides can be pushed beyond the saturated value attainable with high absorption by shifting the absorption peak to the lower wavelength side of the pump wavelength. The efficiency of the resulting cross-phase modulation is dependent on the offset of the subband energy levels from the conduction band edge. For a given subband structure, the cross-phase modulation efficiency increases as the subband structure is placed closer to the conduction band edge.
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42.82.Et Waveguides, couplers, and arrays
52.77.-j Plasma applications
71.20.Gj Other metals and alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Terahertz detection by two dimensional plasma field effect transistors in quantizing magnetic fields

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, K. Köhler, G. Valušis, K. Gołaszewska, E. Kamińska, and A. Piotrowska

Appl. Phys. Lett. 92, 203509 (2008); http://dx.doi.org/10.1063/1.2930682 (3 pages) | Cited 1 time

Online Publication Date: 22 May 2008

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Detection of terahertz radiation by two dimensional electron plasma in high electron mobility GaAs/GaAlAs transistors was investigated at cryogenic temperatures in quantizing magnetic fields. Shubnikov–de Haas oscillations of the detection signal were observed. A double (optical and electrical) modulation technique applied allowed us to study the influence of gated and ungated parts of the transistor channel on the detection. Our results provide a direct experimental evidence that both the gated and ungated plasma participate in the detection and clearly show the necessity to improve theoretical models that usually take into account only the gated part of the channel.
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85.30.Tv Field effect devices
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
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