APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 May 2008

Volume 92, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 202101 (2008); http://dx.doi.org/10.1063/1.2927379 (3 pages)

Jasmin Aghassi, Matthias H. Hettler, and Gerd Schön
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

De-Cheng Hsu, Ingram Yin-ku Chang, Ming-Tsong Wang, Pi-Chun Juan, Y. L. Wang, and Joseph Ya-min Lee

Appl. Phys. Lett. 92, 202901 (2008); http://dx.doi.org/10.1063/1.2928235 (3 pages) | Cited 3 times

Online Publication Date: 19 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric was studied. It was observed that the degradation in threshold voltage (ΔVT) has an exponential dependence on the stress time in the temperature range from 25 to 75 °C. The measurement of subthreshold slope (ΔS) during stress indicates that the degradation in VT is due to the interface trap charges Qit. The extracted activation energy of 0.3–0.5 eV is related to a degradation dominated by the release of atomic hydrogen in the Si–ZrO2 interface.
Show PACS
85.30.Tv Field effect devices
77.55.-g Dielectric thin films

Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films

Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Cheol Seong Hwang, Gee-Man Kim, Kang Jun Choi, and Jae Hak Jeong

Appl. Phys. Lett. 92, 202902 (2008); http://dx.doi.org/10.1063/1.2921785 (3 pages) | Cited 6 times

Online Publication Date: 21 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This study examined the interfacial reaction of plasma-enhanced atomic layer deposited TaCxNy films with underlying SiO2 and HfO2 layers, as well as their effective work functions (EWFs). The adoption of Ar/H2 plasma as a reducing agent suppressed the interfacial reactions resulting in a lower electrical thickness. However, it increased the interface state density due to the massive Ar+ plasma damage on the dielectric films. The interfacial reactions were suppressed in TaCxNy on HfO2 compared with that on SiO2. The EWF of TaCxNy with the H2 plasma and Ar/H2 plasma on HfO2 was ∼ 4.9–5.2 and ∼ 4.6 eV, respectively.
Show PACS
84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

InJo Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Domingo Garcia, Prashant Majhi, N. Goel, W. Tsai, C. K. Gaspe, M. B. Santos, and Jack C. Lee

Appl. Phys. Lett. 92, 202903 (2008); http://dx.doi.org/10.1063/1.2920438 (3 pages) | Cited 25 times

Online Publication Date: 21 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work, we present the electrical and material characteristics of TaN/HfO2/In0.53Ga0.47As and InP substrate metal-oxide-semiconductor capacitors and self-aligned n-channel metal-oxide-semiconductor field effect transistor (n-MOSFET) with physical vapor deposition Si interface passivation layer. Excellent electrical characteristics, thin equivalent oxide thickness ( ∼ 1.7 nm), and small frequency dispersion (<2%) were obtained. n-channel high-k InGaAs- and InP-MOSFETs with good transistor behavior and good split capacitance-voltage (C-V) characteristics on In0.53Ga0.47As and InP substrates have also been demonstrated.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors

Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite

S. Fujino, M. Murakami, V. Anbusathaiah, S.-H. Lim, V. Nagarajan, C. J. Fennie, M. Wuttig, L. Salamanca-Riba, and I. Takeuchi

Appl. Phys. Lett. 92, 202904 (2008); http://dx.doi.org/10.1063/1.2931706 (3 pages) | Cited 66 times

Online Publication Date: 21 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the discovery of a lead-free morphotropic phase boundary (MPB) in Sm doped BiFeO3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric to antiferroelectric transition at approximately Bi0.86Sm0.14FeO3 with dielectric constant and out-of-plane piezoelectric coefficient comparable to those of epitaxial (001) oriented PbZr0.52Ti0.48O3 (PZT) thin films at the MPB. The discovered composition may be a strong candidate of a Pb-free piezoelectric replacement of PZT.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.65.Bn Piezoelectric and electrostrictive constants
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Characterization of piezoelectric single crystal YCa4O(BO3)3 for high temperature applications

Shujun Zhang, Yiting Fei, Bruce H. T. Chai, Eric Frantz, David W. Snyder, Xiaoning Jiang, and Thomas R. Shrout

Appl. Phys. Lett. 92, 202905 (2008); http://dx.doi.org/10.1063/1.2936276 (3 pages) | Cited 18 times

Online Publication Date: 22 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Operation at temperatures well above ambient is desired for applications such as smart structures integrated within aircraft and space vehicles. Piezoelectric yttrium calcium oxyborate single crystal YCa4O(BO3)3 (YCOB) was found to exhibit no phase transition until its melting temperature around ∼ 1500 °C. The temperature characteristics of the resonance frequency, electromechanical coupling, and dielectric permittivity were studied in the temperature range of 30–950 °C for different orientations. The electrical resistivity at 800 °C was found to be greater than 2×108 Ω cm. Together with its temperature independent electromechanical coupling factor ( ∼ 12%) and engineered resonance frequency behavior, these make YCOB crystals excellent candidates for sensing applications at ultra high temperatures.
Show PACS
77.65.Bn Piezoelectric and electrostrictive constants
77.65.Fs Electromechanical resonance; quartz resonators
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
72.80.Sk Insulators
77.22.Ch Permittivity (dielectric function)

Effects of nitrogen atom doping on optical properties and dielectric constant of HfO2 gate oxides

X. J. Wang, L. D. Zhang, J. P. Zhang, M. Liu, and G. He

Appl. Phys. Lett. 92, 202906 (2008); http://dx.doi.org/10.1063/1.2936309 (3 pages) | Cited 3 times

Online Publication Date: 23 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of nitrogen atom doping on the optical properties and dielectric constant of HfO2 films has been systematically investigated. Spectroscopic ellipsometry was employed to investigate the optical properties of nitrogen incorporated HfO2 films. The values of average oscillator strength and average oscillator position extracted from spectroscopic ellipsometry demonstrated that nitrogen incorporation could influence the dipole oscillator strength and oscillator position of HfO2. A physical model of dipole structures was proposed to verify the enhancement of dielectric constant of HfO2 films by nitrogen incorporation.
Show PACS
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
78.66.Nk Insulators
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

The Mn effect on the ferroelectric performance of the donor-substituted ABi4Ti4O15-based thin films

Dong-Hau Kuo and Yi-Wen Kao

Appl. Phys. Lett. 92, 202907 (2008); http://dx.doi.org/10.1063/1.2936848 (3 pages) | Cited 3 times

Online Publication Date: 23 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Donor-substituted (K0.45Bi0.55)Bi4Ti4O15 thin films fabricated by a chemical solution deposition were modified by incorporating manganese into B lattice sites to change the type and concentration of the point defects. The ferroelectric hysteresis was related to the existence of Ti3+, oxygen vacancies, and Mn3+. The variations of dielectric properties were related to point defects. The conduction mechanisms of the leakage current involved a field-assisted ionic conduction and a space charge-limited conduction. The maximal polarization occurred for the (K0.45Bi0.55)Bi4(Ti4−yMny)O15 thin films at y = 0.2 with the minimum amount of Ti3+.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films

Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

InJo Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Domingo Garcia, Prashant Majhi, and Jack C. Lee

Appl. Phys. Lett. 92, 202908 (2008); http://dx.doi.org/10.1063/1.2917823 (3 pages) | Cited 6 times

Online Publication Date: 23 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work, we studied the effects of postdeposition anneal (PDA) time and Si interface passivation layer on the material and electrical characteristics of the metal-oxide-semiconductor (MOS) capacitor with high-k (HfO2) material on different orientation substrates with (100), (110), and (311). The interfacial change of HfO2/Si/GaAs gate stacks after PDA has been characterized using x-ray photoelectron spectroscopy (XPS) and Dit measurement using conductance method and frequency dispersion. XPS measurement shows the formation of gallium and arsenic oxides with increasing annealing temperature. Unoxidized Si and gallium and arsenic oxides formation in the interface might act as traps. Self-aligned MOS field effect transistors using PDA at 600 °C and post-metal-annealing at 800 °C have also been fabricated and characterized. The (100) substrate has lower density of interface traps and higher mobility due to reduced Ga2O3 formation.
Show PACS
85.30.Tv Field effect devices
84.32.Tt Capacitors
81.65.Rv Passivation
61.72.Cc Kinetics of defect formation and annealing
73.50.Dn Low-field transport and mobility; piezoresistance
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close