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19 May 2008

Volume 92, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 92, 202101 (2008); http://dx.doi.org/10.1063/1.2927379 (3 pages)

Jasmin Aghassi, Matthias H. Hettler, and Gerd Schön
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Current-driven output magnetization switching in a magnetic nanowire with a three-terminal Y junction

Chunghee Nam, Youngman Jang, Ki-Su Lee, and B. K. Cho

Appl. Phys. Lett. 92, 202501 (2008); http://dx.doi.org/10.1063/1.2926665 (3 pages)

Online Publication Date: 19 May 2008

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Electrically induced magnetization switching was investigated in a three-terminal magnetic Y junction. Two input wires acted as domain wall (DW) injection sources, one of which was used for electrical gating. This configuration made it possible to detrap a DW that was pinned at the Y junction. The magnetization of the output wire was controlled by current-driven DW motion that was induced by the isolated-gating input wire. The active gating performance of the current-driven DW motion is more effective than that induced by a magnetic field.
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75.60.Ch Domain walls and domain structure
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Room temperature ferromagnetism in diluted magnetic semiconductor Zn1−xCrxTe nanoparticles synthesized by chemical method

Yutaka Niwayama, Hiroaki Kura, Tetsuya Sato, Migaku Takahashi, and Tomoyuki Ogawa

Appl. Phys. Lett. 92, 202502 (2008); http://dx.doi.org/10.1063/1.2931705 (3 pages) | Cited 3 times

Online Publication Date: 19 May 2008

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Nanoparticles of diluted magnetic semiconductor Zn1−xCrxTe with various Cr concentrations were synthesized by a chemical method, and their magnetic properties were investigated. The synthesized nanoparticles show ferromagnetism, and the saturation magnetization increased with increasing Cr concentration in the range from x = 0.002 to x = 0.02. The Zn0.98Cr0.02Te nanoparticles showed ferromagnetism above room temperature, where the Curie temperature TC was estimated to be about 520 K. This is much higher than the reported value of TC in the Zn1−xCrxTe thin films.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Cc Other ferromagnetic metals and alloys
75.50.Pp Magnetic semiconductors
68.55.ag Semiconductors

Perpendicular critical-state susceptibility of square superconducting films

D.-X. Chen, C. Navau, N. Del-Valle, and A. Sanchez

Appl. Phys. Lett. 92, 202503 (2008); http://dx.doi.org/10.1063/1.2931707 (3 pages) | Cited 7 times

Online Publication Date: 19 May 2008

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In order to better study the electromagnetic properties of superconducting films, the perpendicular critical-state ac susceptibility χ = χ′−jχ″ of a square superconducting film is numerically calculated using a magnetic energy minimization procedure as a function of the field amplitude Hm. The emphasis is put on the calculation accuracy of the low-Hm limit χ0 and the Hm at χ″ = χm″. It is shown that after having accurate χ0, χ(Hm) of the square film can be accurately scaled from the analytical χ(Hm) of a thin disk.
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74.78.-w Superconducting films and low-dimensional structures
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems

Colossal nonlinear optical magnetoelectric effects in multiferroic Bi2FeCrO6

Sheng Ju and Guang-Yu Guo

Appl. Phys. Lett. 92, 202504 (2008); http://dx.doi.org/10.1063/1.2927474 (3 pages) | Cited 6 times

Online Publication Date: 21 May 2008

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Within density functional theory with the generalized gradient approximation plus on-site Coulomb repulsion method, we investigate magnetic ordering dependence of linear and nonlinear optical responses in multiferroic Bi2FeCrO6. We find that in spite of the minor difference in the linear dielectric function between ferrimagnetic state and ferromagnetic state, the second-harmonic generation susceptibility and its related linear electro-optical coefficient dramatically change. Such colossal magnetoelectric effects come mainly from the enhanced contrast in the double-photon resonance absorption between two magnetic configurations, and will open a direction in the application of conventional multiferroics via nonlinear magnetoelectric effect.
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75.80.+q Magnetomechanical effects, magnetostriction
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Integrating superconductive and optical circuits

F. Stella, M. Casalboni, M. Cirillo, V. Merlo, C. Palazzesi, G. P. Pepe, P. Prosposito, and M. Salvato

Appl. Phys. Lett. 92, 202505 (2008); http://dx.doi.org/10.1063/1.2931700 (3 pages)

Online Publication Date: 21 May 2008

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We have integrated on oxidized silicon wafers superconductive films and Josephson junctions along with sol-gel optical channel waveguides. The fabrication process is carried out in two steps that result to be solid and noninvasive. It is demonstrated that 660 nm light, coupled from an optical fiber into the channel sol-gel waveguide, can be directed toward superconducting tunnel junctions whose current-voltage characteristics are affected by the presence of the radiation. The response of the junction biased at various currents as a function of the optical pumping is presented and discussed according to a nonequilibrium superconductivity model.
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85.25.Cp Josephson devices
42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer

Probing the magnetic states in mesoscopic rings by synchronous transport measurements in ring-wire hybrid configuration

S. Jain and A. O. Adeyeye

Appl. Phys. Lett. 92, 202506 (2008); http://dx.doi.org/10.1063/1.2936089 (3 pages) | Cited 10 times

Online Publication Date: 22 May 2008

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The magnetization reversal of individual rings has been mapped using synchronous magnetotransport measurement of ring-wire hybrid structures. This method of characterization eliminates the effect of both short circuiting introduced by placing the electrical contact probes directly on the ring and the dependence of the magnetotransport response on the contact configuration used. We have characterized the switching behavior of circular and elliptical ring elements and observed clearly distinguishable spin states for different ring shapes.
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75.60.Jk Magnetization reversal mechanisms
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.47.-m Magnetotransport phenomena; materials for magnetotransport

Interfacial magnetic domain wall formation in perpendicular-anisotropy, exchange-spring films

S. M. Watson, T. Hauet, J. A. Borchers, S. Mangin, and Eric E. Fullerton

Appl. Phys. Lett. 92, 202507 (2008); http://dx.doi.org/10.1063/1.2936836 (3 pages) | Cited 10 times

Online Publication Date: 22 May 2008

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Using magnetometry and polarized neutron reflectometry (PNR), we have mapped the reversal processes of the antiferromagnetically coupled, hard/soft system, TbFeCo/[Co/Pd(tPd)]15, with perpendicular anisotropy. The magnitude of the exchange coupling within the [Co/Pd] layer can be tuned by varying Pd thickness. Since PNR is insensitive to moments perpendicular to the plane, a scattering geometry with polarization parallel to the scattering vector was used to isolate in-plane magnetization components and characterize the behavior of a domain wall near the bilayer interface. Consistent with predictions from a micromagnetic calculation, the characteristics of the domain wall vary with field and exchange stiffness in the Co/Pd.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.30.Et Exchange and superexchange interactions
75.30.Gw Magnetic anisotropy
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Current-induced domain wall motion in a nanowire with perpendicular magnetic anisotropy

Soon-Wook Jung, Woojin Kim, Taek-Dong Lee, Kyung-Jin Lee, and Hyun-Woo Lee

Appl. Phys. Lett. 92, 202508 (2008); http://dx.doi.org/10.1063/1.2926664 (3 pages) | Cited 62 times

Online Publication Date: 22 May 2008

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We theoretically study the current-induced magnetic domain wall motion in a metallic nanowire with perpendicular magnetic anisotropy. The anisotropy can reduce the critical current density of the domain wall motion. We explain the reduction mechanism and identify the maximal reduction conditions. This result facilitates both fundamental studies and device applications of the current-induced domain wall motion.
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75.60.Ch Domain walls and domain structure
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
72.25.Ba Spin polarized transport in metals
75.30.Gw Magnetic anisotropy
75.50.Tt Fine-particle systems; nanocrystalline materials
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