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19 May 2008

Volume 92, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 92, 202101 (2008); http://dx.doi.org/10.1063/1.2927379 (3 pages)

Jasmin Aghassi, Matthias H. Hettler, and Gerd Schön
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Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

André Anders

Appl. Phys. Lett. 92, 201501 (2008); http://dx.doi.org/10.1063/1.2936307 (3 pages) | Cited 24 times

Online Publication Date: 22 May 2008

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Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ∼ Q1/2, whereas the rate normalized to the average power decreases ∼ Q−1/2, with Q being the mean ion charge state number.
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81.15.Cd Deposition by sputtering
79.20.Hx Electron impact: secondary emission
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