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26 May 2008

Volume 92, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 211102 (2008); http://dx.doi.org/10.1063/1.2936993 (3 pages)

Soon-Cheol Kong, Alan V. Sahakian, Alexander Heifetz, Allen Taflove, and Vadim Backman
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High-speed wavelength conversion in quantum dot and quantum well semiconductor optical amplifiers

D. Nielsen, S. L. Chuang, N. J. Kim, D. Lee, S. H. Pyun, W. G. Jeong, C. Y. Chen, and T. S. Lay

Appl. Phys. Lett. 92, 211101 (2008); http://dx.doi.org/10.1063/1.2931053 (3 pages) | Cited 8 times

Online Publication Date: 27 May 2008

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We experimentally investigate wavelength conversion in quantum dot and quantum well optical amplifiers via four-wave mixing. Our results show superior conversion efficiency in a quantum dot device compared to a quantum well device with identical gain. Furthermore, a small-signal modulation bandwidth >25 GHz was measured with greater than 100% efficiency. Cross talk between two simultaneously input beams was found to be 20 dB below the signal power demonstrating the possibility for high-speed, multichannel performance. Cross-gain modulation measurements were performed as well and show a much smaller bandwidth of 1 GHz indicating that four-wave mixing is superior for high-speed signals.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes

Robust detection of deeply subwavelength pits in simulated optical data-storage disks using photonic jets

Soon-Cheol Kong, Alan V. Sahakian, Alexander Heifetz, Allen Taflove, and Vadim Backman

Appl. Phys. Lett. 92, 211102 (2008); http://dx.doi.org/10.1063/1.2936993 (3 pages) | Cited 10 times

Online Publication Date: 28 May 2008

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We report a means to detect deeply subwavelength pits in optical data-storage media by employing the recently observed giant backscattering perturbation phenomenon of the photonic jet. We conducted microwave experiments with dimensionally scaled-up pits and lands in a simulated optical data-storage device. These measurements were backed up by three-dimensional finite-difference time-domain computational solutions of Maxwell's equations. Results indicate that pits having a lateral area of 0.025 square wavelengths, i.e., much smaller than current BluRay™ device features, can be robustly detected with a contrast ratio approximately 28 dB greater than that provided by a lens system.
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42.79.Vb Optical storage systems, optical disks
85.60.-q Optoelectronic devices
42.79.Bh Lenses, prisms and mirrors
02.70.Bf Finite-difference methods

Collinear source of polarization-entangled photon pairs at nondegenerate wavelengths

P. Trojek and H. Weinfurter

Appl. Phys. Lett. 92, 211103 (2008); http://dx.doi.org/10.1063/1.2924280 (3 pages) | Cited 6 times

Online Publication Date: 28 May 2008

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We report on a simple but highly efficient source of polarization-entangled photon pairs at nondegenerate wavelengths. The fully collinear configuration of the source enables very high coupling efficiency into a single optical mode and allows the use of long nonlinear crystals. With optimized dispersion compensation, it is possible to use a free-running laser diode as pump source and to reach an entanglement fidelity of 99.4% at rates as high as 27 000 pairs/s/mW of pump power.
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03.65.Ud Entanglement and quantum nonlocality (e.g. EPR paradox, Bell's inequalities, GHZ states, etc.)
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Effect of buffer gas ratios on the relationship between cell temperature and frequency shifts of the coherent population trapping resonance

K. Deng, T. Guo, D. W. He, X. Y. Liu, L. Liu, D. Z. Guo, X. Z. Chen, and Z. Wang

Appl. Phys. Lett. 92, 211104 (2008); http://dx.doi.org/10.1063/1.2937407 (3 pages) | Cited 6 times

Online Publication Date: 28 May 2008

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We studied the relationship between pressure ratio of the buffer gases (argon and neon) and the rate of coherent population trapping resonance frequency shift with cell temperature in 85Rb. We found that when the total pressure of the buffer gases varies within the range of 5–15 kPa, the frequency shift rate varies along a bell shaped curve. Every curve crossed the horizontal axis at two points that are roughly symmetrical with respect to the midpoint at 1:1. This allows us to minimize the rate of frequency shift by adjusting the pressure ratio of the buffer gases to these two points.
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42.60.By Design of specific laser systems
32.70.Jz Line shapes, widths, and shifts
32.50.+d Fluorescence, phosphorescence (including quenching)

Absolute external luminescence quantum efficiency of zinc oxide

Mario Hauser, Alexander Hepting, Robert Hauschild, Huijuan Zhou, Johannes Fallert, Heinz Kalt, and Claus Klingshirn

Appl. Phys. Lett. 92, 211105 (2008); http://dx.doi.org/10.1063/1.2937442 (3 pages) | Cited 15 times

Online Publication Date: 28 May 2008

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We report on the measurement of the absolute external luminescence quantum efficiency of various ZnO samples using a miniature integrating sphere fitted into a cryostat. Even the absolute luminescence quantum efficiencies per spectral interval are directly accessible. Measurements have been carried out on high quality bulk samples and different commercially available ZnO powders from 8 K up to room temperature. Activated processes lead to an overall decrease in the efficiency with temperature. All efficiencies are considerably below unity, making the identification of the luminescence decay time with the radiative life time very questionable.
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78.55.Et II-VI semiconductors
81.05.Dz II-VI semiconductors

Low-threshold and broadly tunable lasers of Yb3+-doped yttrium lanthanum oxide ceramic

Qiang Hao, Wenxue Li, Heping Zeng, Qiuhong Yang, Chuanguo Dou, Hongxu Zhou, and Wei Lu

Appl. Phys. Lett. 92, 211106 (2008); http://dx.doi.org/10.1063/1.2926654 (3 pages) | Cited 8 times

Online Publication Date: 29 May 2008

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We experimentally demonstrated diode-pumped continuous wave and tunable laser operation of Yb3+-doped yttrium lanthanum oxide transparent ceramic [Yb:(Y1−xLax)2O3,x = 0.1], which was fabricated with nanopowders and sintered in H2 atmosphere. As low as 400 mW pumping threshold and a slope efficiency of 52% were realized at 1080 nm under a high-brightness 976 nm diode pump with a fiber core of 50 μm and a numerical aperture of 0.22. A maximum output power of 2.1 W was obtained when the non-lasing absorbed pump power was 19.5 W at 976 nm with diode laser of 400 μm fiber core. A smooth tunable curve from 1018 to 1086 nm was achieved at 940 nm diode pump. Broadband lasing spectra up to 30 nm were observed in the tunable laser experiment.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems

Tungsten black absorber for solar light with wide angular operation range

Eden Rephaeli and Shanhui Fan

Appl. Phys. Lett. 92, 211107 (2008); http://dx.doi.org/10.1063/1.2936997 (3 pages) | Cited 20 times

Online Publication Date: 29 May 2008

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Using three-dimensional finite-difference time-domain simulations, we designed a structured tungsten slab with subwavelength periodicity that displays near-complete absorptivity throughout the entire solar spectrum over a wide angular range. The structure consists of a square lattice array of pyramids. The parameters of the pyramids are chosen to provide the optimal impedance matching between free space and tungsten, while the period is chosen to be subwavelength in order to generate absorption over an ultrabroad band of wavelengths.
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42.79.Ek Solar collectors and concentrators

Intersubband absorption of quantum cascade laser structures and its application to laser modulation

A. Lyakh, R. Maulini, A. Tsekoun, R. Go, and C. K. N. Patel

Appl. Phys. Lett. 92, 211108 (2008); http://dx.doi.org/10.1063/1.2937207 (3 pages) | Cited 4 times

Online Publication Date: 29 May 2008

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We have analyzed light absorption in a quantum cascade laser (QCL) structure under forward and reverse bias. Strong laser frequency absorption modulation is predicted and observed for the voltage variation within the high differential resistance voltage range. We propose to use this mechanism for monolithically integrated intracavity modulation of QCLs with suppressed thermal chirp. In addition, the described method allows for extraction of the intersubband absorption component of the total waveguide losses.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Gw Other integrated-optical elements and systems

Optical bistability and multistability in one-dimensional periodic metal-dielectric photonic crystal

F. Y. Wang, G. X. Li, H. L. Tam, K. W. Cheah, and S. N. Zhu

Appl. Phys. Lett. 92, 211109 (2008); http://dx.doi.org/10.1063/1.2938060 (3 pages) | Cited 12 times

Online Publication Date: 30 May 2008

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The optical bistability and multistability in one-dimensional photonic crystal with the periodic metal-dielectric structure is investigated theoretically. In linear transmission, a structure with N periods will support N−1 resonant modes which correspond to the transmission peaks. Strong localized effect in these resonant modes is obtained. Optical bistability and multistability can be achieved when the incident wavelength is close to a resonance, which can be seen as an effect of the dynamic shifting of the wavelength of the resonant modes. It is found that the threshold for optical bistability in the periodic resonant structure is lower than the nonresonant metal-dielectric structure.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Qs Photonic bandgap materials
42.70.Mp Nonlinear optical crystals

Influence of oxygen passivation on optical properties of PbSe thin films

F. Zhao, S. Mukherjee, J. Ma, D. Li, S. L. Elizondo, and Z. Shi

Appl. Phys. Lett. 92, 211110 (2008); http://dx.doi.org/10.1063/1.2938417 (3 pages) | Cited 6 times

Online Publication Date: 30 May 2008

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A series of PbSe thin films grown on a (111)-oriented Si substrate by molecular beam epitaxy were passivated by high-purity oxygen at different annealing temperatures. The photoluminescence intensity increased by more than two orders of magnitude at 4.5 μm after annealing the samples in an O2 atmosphere at 350 °C. X-ray photoelectron spectroscopy revealed that PbO and SeO2 were formed during the oxidation process of PbSe, thus confirming the formation of the surface passivation layer which resulted in the observed significant increase in PL intensity.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
81.65.Rv Passivation
81.65.Mq Oxidation
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.72.Cc Kinetics of defect formation and annealing
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Free-electron maser based on a cavity with two- and one-dimensional distributed feedback

I. V. Konoplev, A. W. Cross, P. MacInnes, W. He, A. D. R. Phelps, C. G. Whyte, K. Ronald, and C. W. Robertson

Appl. Phys. Lett. 92, 211501 (2008); http://dx.doi.org/10.1063/1.2924313 (3 pages) | Cited 5 times

Online Publication Date: 27 May 2008

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The study of a coaxial free-electron maser (FEM) based on two-dimensional (2D) and one-dimensional (1D) distributed feedback, driven by a 70 mm diameter, annular electron beam is presented. A new cavity formed with 2D and 1D periodic lattices, positioned at the input and output of the interaction region, respectively, was used. It has been demonstrated that 2D distributed feedback in the input mirror allowed 8 mm radiation emitted from different parts of the electron beam to be synchronized. The FEM operating in the 35.9–38.9 GHz frequency region generated 65 MW, 150 ns duration millimeter wave pulses which contained ∼ 10 J of energy in the pulse.
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41.60.Cr Free-electron lasers
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)

The effect of high-Z dopant on laser-driven acceleration of a thin plastic target

J. Badziak, A. Kasperczuk, P. Parys, T. Pisarczyk, M. Rosiński, L. Ryć, J. Wołowski, R. Suchańska, J. Krása, E. Krousky, L. Láska, K. Mašek, M. Pfeifer, K. Rohlena, J. Skala, et al.

Appl. Phys. Lett. 92, 211502 (2008); http://dx.doi.org/10.1063/1.2920705 (3 pages) | Cited 8 times

Online Publication Date: 28 May 2008

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Acceleration of a thin (10 or 20 μm) plastic foil by 120 J, 0.438 μm, 0.3 ns laser pulse of intensity up to 1015 W/cm2 has been investigated. It is shown that the introducing a high-Z dopant to the foil causes an increase in the ablating plasma density, velocity, and collimation which, in turn, results in a remarkably higher kinetic energy and energy fluence of the flyer foil.
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52.38.Kd Laser-plasma acceleration of electrons and ions
52.38.Mf Laser ablation
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Reduction of debris of a CO2 laser-produced Sn plasma extreme ultraviolet source using a magnetic field

Yoshifumi Ueno, Georg Soumagne, Akira Sumitani, Akira Endo, Takeshi Higashiguchi, and Noboru Yugami

Appl. Phys. Lett. 92, 211503 (2008); http://dx.doi.org/10.1063/1.2938365 (3 pages) | Cited 8 times

Online Publication Date: 30 May 2008

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We demonstrated a fivefold reduction in Sn debris deposited on small Mo/Si multilayer mirrors from a Sn planar target by applying a static magnetic field of 1 T. The debris reduction is attributed to the decrease of more than three orders in the number of ions that reach the sample mirror due to their interaction with the applied magnetic field that guides the ions away from the mirror. The remaining deposition is due to neutral Sn atoms that do not interact with the applied magnetic field.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.50.Dg Plasma sources
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Evidence for an indirect gap in β−FeSi2 epilayers by photoreflectance spectroscopy

A. G. Birdwell, C. L. Littler, R. Glosser, M. Rebien, W. Henrion, P. Stauβ, and G. Behr

Appl. Phys. Lett. 92, 211901 (2008); http://dx.doi.org/10.1063/1.2936076 (3 pages) | Cited 2 times

Online Publication Date: 27 May 2008

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Photoreflectance spectra obtained from epitaxial films of semiconducting β−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934±0.002 eV at 75 K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823±0.002 eV at 75 K.
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78.66.Li Other semiconductors
78.20.-e Optical properties of bulk materials and thin films
71.20.Nr Semiconductor compounds

Rapid thermal annealing of ion beam synthesized β-FeSi2 nanoparticles in Si

C. M. Sun, H. K. Tsang, S. P. Wong, W. Y. Cheung, N. Ke, and S. K. Hark

Appl. Phys. Lett. 92, 211902 (2008); http://dx.doi.org/10.1063/1.2936937 (3 pages) | Cited 4 times

Online Publication Date: 27 May 2008

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High crystal-quality β-FeSi2 nanoparticles in silicon, prepared by ion beam synthesis and subjected to rapid thermal annealing (RTA), are investigated. Completely amorphous Fe–Si layers are formed by Fe implantation at cryogenic temperature, with a dosage of 5×1015 cm−2, into float-zone silicon. After RTA at 900 °C for 60 s, β-FeSi2 precipitates are aggregated in the Si matrix and give ∼ 1.5 μm photoluminescence. High-resolution plan-view transmission electron microscopy revealed that some strain is present in the RTA treated FeSi2 particles. Silicon dislocations, coming from the strain relaxation during the additional long-term annealing, are observed around β-FeSi2 particles.
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61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
61.72.up Other materials
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.55.Qr Amorphous materials; glasses and other disordered solids
68.37.Lp Transmission electron microscopy (TEM)

Role of optical phonon in Ge thermal conductivity

M. Kazan, S. Pereira, J. Coutinho, M. R. Correia, and P. Masri

Appl. Phys. Lett. 92, 211903 (2008); http://dx.doi.org/10.1063/1.2937113 (3 pages) | Cited 9 times

Online Publication Date: 27 May 2008

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We report on the contribution of optical phonon decay into acoustic phonon to the thermal conductivity [k(T)] of semiconductors. We have considered this mechanism as an acoustic phonon generation rate within the full modified Callaway theory to accurately describe experimental data of k(T) for Ge as a function of isotopic composition. The proposed model requires only one adjustable parameter for each mode. Our approach to describe k(T) in semiconductors is found to provide much better agreement with the experimental results than previously reported models, which did not account for the role of optical phonon.
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66.70.Df Metals, alloys, and semiconductors
63.20.-e Phonons in crystal lattices

High-dome blisters formed by deuterium-induced local superplasticity

W. M. Shu

Appl. Phys. Lett. 92, 211904 (2008); http://dx.doi.org/10.1063/1.2937139 (3 pages) | Cited 8 times

Online Publication Date: 27 May 2008

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The high-dome blisters appearing on tungsten after deuterium plasma exposure at around 500 K are considered to be generated by the diffusion and agglomeration of the deuterium-vacancy clusters, and this kind of deformation is called as deuterium-induced local superplasticity. There were cavities inside the blisters smaller than a few micrometers, whereas there were no hollow lids formed for some blisters greater than a few micrometers, which is contrary to the typical feature of blisters reported before.
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62.20.fq Plasticity and superplasticity
61.72.jd Vacancies
66.30.Lw Diffusion of other defects
81.40.Lm Deformation, plasticity, and creep

Achieving large macroscopic compressive plastic deformation and work-hardening-like behavior in a monolithic bulk metallic glass by tailoring stress distribution

L. Y. Chen, Q. Ge, S. Qu, Q. K. Jiang, X. P. Nie, and J. Z. Jiang

Appl. Phys. Lett. 92, 211905 (2008); http://dx.doi.org/10.1063/1.2937141 (3 pages) | Cited 10 times

Online Publication Date: 28 May 2008

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The limited plastic deformation and lack of work hardening seriously restrict the applications of bulk metallic glasses (BMGs). Here, large macroscopic compressive plastic deformation (over 15%) and work-hardening-like behavior were achieved in a monolithic BMG through tailoring loading stress distribution experimentally. Numerical analysis was also carried out to investigate the stress distribution under the same mechanical condition. It is shown that loading induced stress gradient is responsible for the achievement mentioned above.
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62.20.fq Plasticity and superplasticity
61.43.Fs Glasses
81.40.Lm Deformation, plasticity, and creep

The role of vacancy on trapping interstitial O in heavily As-doped Si

Guang-Hong Lu, Q. Wang, and Feng Liu

Appl. Phys. Lett. 92, 211906 (2008); http://dx.doi.org/10.1063/1.2937308 (3 pages) | Cited 1 time

Online Publication Date: 28 May 2008

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We have investigated the interstitial oxygen (Oi) diffusion in heavily arsenic (As)-doped Si using first-principles calculations. We show that it is not the As per se but the Si vacancy (V) that trap Oi to reduce its diffusion. Arsenic actually plays the role of an arbitrator to activate thermal generation of As–V pairs, which in turn trap Oi with a large binding energy of ∼ 1.0 eV, in quantitative agreement with experiments. Our finding solves a long-standing puzzle on the atomistic mechanism underlying the retardation of Oi precipitation in heavily As-doped Si.
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61.72.jd Vacancies
61.72.jj Interstitials
66.30.Lw Diffusion of other defects
71.15.Nc Total energy and cohesive energy calculations
61.72.Yx Interaction between different crystal defects; gettering effect

Concentric ring pattern formation in heated chromium-gold thin films on silicon

Jatinder S. Randhawa, Adam Bernfeld, Michael Keung, Alex A. Volinsky, and David H. Gracias

Appl. Phys. Lett. 92, 211907 (2008); http://dx.doi.org/10.1063/1.2937309 (3 pages) | Cited 1 time

Online Publication Date: 28 May 2008

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Patterns that formed spontaneously upon heating thermally evaporated thin films of gold (Au) and chromium (Cr) on silicon (Si) substrates to 500 °C were investigated. A variety of patterns were observed. The type of pattern formed correlated with the thickness ratio of Cr to Au. The most striking pattern consisted of concentric rings spaced approximately 10–30 μm apart. Each ring was composed of pits 2–5 μm in length, which extended 200–400 nm into the silicon substrate. While concentric patterns are widely seen in chemical reaction-diffusion systems, pattern formation in the heated Au/Cr/Si system has not been previously observed.
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81.05.Bx Metals, semimetals, and alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
66.30.-h Diffusion in solids

Thermal rectification at silicon-amorphous polyethylene interface

Ming Hu, Pawel Keblinski, and Baowen Li

Appl. Phys. Lett. 92, 211908 (2008); http://dx.doi.org/10.1063/1.2937834 (3 pages) | Cited 27 times

Online Publication Date: 28 May 2008

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Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of inorganic crystal and amorphous polymer by imposing a series of positive and negative heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene interfacial thermal conductance is about 19.6 and 13.5 MW/m2 K at room temperature for heat flowing from polymer to silicon and from silicon to polymer, respectively, which results in thermal rectification of up to 45%. Vibrational analysis indicates that the origin of thermal rectification is in the strong temperature dependence of the frequency spectra of the polymer.
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85.30.Kk Junction diodes
73.40.Ei Rectification

Effect of Sn grain orientation on electromigration degradation mechanism in high Sn-based Pb-free solders

Minhua Lu, Da-Yuan Shih, Paul Lauro, Charles Goldsmith, and Donald W. Henderson

Appl. Phys. Lett. 92, 211909 (2008); http://dx.doi.org/10.1063/1.2936996 (3 pages) | Cited 26 times

Online Publication Date: 29 May 2008

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Electromigration induced damage strongly depends on Sn-grain orientation in Pb-free solders. Rapid depletion of intermetallic compounds and under bump metallurgy led to significant damages caused by the fast diffusion of Cu and Ni along the c axis of Sn crystals. When the c axis of Sn grain is not aligned with the current direction, electromigration (EM) damage is dominated by Sn self-diffusion, which takes longer to occur. This is a direct proof of the highly anisotropic diffusion behavior in Sn. Due to the presence of twin structures and stable Ag3Sn network, SnAg(Cu) solders are less susceptible to grain orientation effects and showed better EM performance than SnCu solders.
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66.30.Qa Electromigration
61.72.Mm Grain and twin boundaries
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Photoluminescence and x-ray diffraction measurements of InN epifilms grown with varying In/N ratio by plasma-assisted molecular-beam epitaxy

Yong-zhao Yao, Takashi Sekiguchi, Naoki Ohashi, Yutaka Adachi, and Takeshi Ohgaki

Appl. Phys. Lett. 92, 211910 (2008); http://dx.doi.org/10.1063/1.2937833 (3 pages) | Cited 1 time

Online Publication Date: 29 May 2008

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Photoluminescence (PL) and x-ray diffraction (XRD) have been performed to examine the In/N ratio effect on the InN films. The PL of N-rich InN are more asymmetric, broadened, and have higher energy compared with In-rich ones. An important finding is that the N-rich and In-rich InN show a sharp difference in their PL peak energies. XRD shows that lattice constant a is affected more by the In/N ratio rather than lattice constant c. The PL behavior of N-rich and In-rich InN films are explained in terms of two different types of native point defects that dominate the two growth regimes.
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81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
52.77.Dq Plasma-based ion implantation and deposition

Photoluminescence enhancement and quenching of single CdSe/ZnS nanocrystals on metal surfaces dominated by plasmon resonant energy transfer

Kazunari Matsuda, Yuichi Ito, and Yoshihiko Kanemitsu

Appl. Phys. Lett. 92, 211911 (2008); http://dx.doi.org/10.1063/1.2937142 (3 pages) | Cited 38 times

Online Publication Date: 30 May 2008

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We studied the mechanism of the photoluminescence (PL) enhancement and quenching of single CdSe/ZnS nanocrystals on rough Au surfaces. Single nanocrystal spectroscopy revealed that the PL enhancement depends strongly on the excitation wavelength and liner-polarization angle due to the localized plasmon excitation and is also sensitive to the nanocrystal size. The polarization- and size-dependent PL enhancement and quenching are determined by the balance between the resonant energy transfer from the nanocrystal to the Au surface and the electric field enhancement.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Mixed phases in p-type CuInSe2 thin films detected by using micro-Raman scattering spectroscopy

D. Wang, L. Wan, Z. Bai, and Y. Cao

Appl. Phys. Lett. 92, 211912 (2008); http://dx.doi.org/10.1063/1.2937408 (3 pages) | Cited 9 times

Online Publication Date: 30 May 2008

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In order to detect some subtle differences concerning different atomic orderings presented in the CuInSe2 compound, low-temperature Raman scattering was carried out on CuInSe2 thin films. By considering the phonon dispersion curves and using the Ridley model, it shows that the chalcopyrite A1 mode decayed asymmetrically into phonons with frequencies of ∼ 123 and ∼ 50 cm−1, which are attributed to a TO and a LA phonon along the Γ-X and Γ-N directions of the Brillouin zone. However, the A1 mode of the CuAu-ordered CuInSe2 showed almost no frequency change upon increasing the temperature up to 400 K.
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78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
64.70.kg Semiconductors
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