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Applied Physics Letters / Volume 92 / Issue 23 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 92, 233120 (2008); http://dx.doi.org/10.1063/1.2945637 (3 pages)

Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

Jongsun Maeng, Gunho Jo, Soon-Shin Kwon, Sunghoon Song, Jaeduck Seo, Seok-Ju Kang, Dong-Yu Kim, and Takhee Lee

Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea

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(Received 8 April 2008; accepted 25 May 2008; published online 13 June 2008)

We report the effects of gate bias sweep rate on the electronic characteristics of ZnO nanowire field-effect transistors (FETs) under different environments. As the device was swept at slower gate bias sweep rates, the current decreased and threshold voltage shifted to a positive gate bias direction. These phenomena are attributed to increased adsorption of oxygen on the nanowire surface by the longer gate biasing time. Adsorbed oxygens capture electrons and cause a surface depletion in the nanowire channel. Different electrical trends were observed for ZnO nanowire FETs under different oxygen environments of ambient air, N2, and passivation.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

adsorption, field effect transistors, II-VI semiconductors, nanoelectronics, nanowires, passivation, semiconductor quantum wires, wide band gap semiconductors, zinc compounds

PACS

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

  • 85.30.Tv

    Field effect devices

  • 85.35.-p

    Nanoelectronic devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2945637

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S.-W. Kim, H.-K. Park, M.-S. Yi, N.-M. Park, J.-H. Park, S.-H. Kim, S.-L. Maeng, C.-J. Choi, and S.-E. Moon, Appl. Phys. Lett. 90, 033107 (2007)APPLAB000090000003033107000001.

    Z. Fan and J. G. Lu, Appl. Phys. Lett. 86, 123510 (2005)APPLAB000086000012123510000001.

    Q. H. Li, Y. X. Liang, Q. Wan, and T. H. Wang, Appl. Phys. Lett. 85, 6389 (2004)APPLAB000085000026006389000001.

    Z. Fan, D. Wang, P.-C. Chang, W.-Y. Tseng, and J. G. Lu, Appl. Phys. Lett. 85, 5923 (2004)APPLAB000085000024005923000001.

    P.-C. Chang, Z. Fan, C.-J. Chien, D. Stichtenoth, C. Ronning, and J. G. Lu, Appl. Phys. Lett. 89, 133113 (2006)APPLAB000089000013133113000001.

    W. I. Park, J. S. Kim, G.-C. Yi, M. H. Bae, and H.-J. Lee, Appl. Phys. Lett. 85, 5052 (2004)APPLAB000085000021005052000001.

    S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, Appl. Phys. Lett. 90, 162112 (2007)APPLAB000090000016162112000001.


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