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9 Jun 2008

Volume 92, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 92, 231901 (2008); http://dx.doi.org/10.1063/1.2938921 (3 pages)

N. A. Mara, D. Bhattacharyya, P. Dickerson, R. G. Hoagland, and A. Misra
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Comment on “Characterization of As-doped, p-type ZnO by x-ray absorption near-edge structure spectroscopy: Theory” [ Appl. Phys. Lett. 89, 222113 (2006) ]

Veeramuthu Vaithianathan, Sang Sub Kim, and Kandasami Asokan

Appl. Phys. Lett. 92, 236101 (2008); http://dx.doi.org/10.1063/1.2939557 (1 page) | Cited 3 times

Online Publication Date: 9 June 2008

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Abstract Unavailable
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61.72.uj III-V and II-VI semiconductors
78.70.Dm X-ray absorption spectra
71.20.Nr Semiconductor compounds
61.72.Cc Kinetics of defect formation and annealing
82.00.00 Physical chemistry and chemical physics
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Response to “Comment on ‘Characterization of As-doped, p-type ZnO by x-ray absorption near-edge structure spectroscopy: Theory’ ” [ Appl. Phys. Lett. 92, 236101 (2008) ]

S. Limpijumnong, M. F. Smith, and S. B. Zhang

Appl. Phys. Lett. 92, 236102 (2008); http://dx.doi.org/10.1063/1.2939558 (2 pages) | Cited 1 time

Online Publication Date: 9 June 2008

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
78.70.Dm X-ray absorption spectra
71.55.Gs II-VI semiconductors
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