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9 Jun 2008

Volume 92, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 92, 231901 (2008); http://dx.doi.org/10.1063/1.2938921 (3 pages)

N. A. Mara, D. Bhattacharyya, P. Dickerson, R. G. Hoagland, and A. Misra
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Piezoelectricity enhancement in ferroelectric ceramics due to orientation

K. P. Jayachandran, J. M. Guedes, and H. C. Rodrigues

Appl. Phys. Lett. 92, 232901 (2008); http://dx.doi.org/10.1063/1.2940215 (3 pages) | Cited 4 times

Online Publication Date: 10 June 2008

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A continuum model simulation, explicitly incorporating anisotropic grain-level features, based on homogenization of materials predicts an enhancement of piezoelectricity in ferroelectric ceramics better than oriented single crystals. Incorporation of randomness in the orientation of polarization associated with the grains is demonstrated to offer great prospect in the design of ceramic ferroelectric materials such as BaTiO3.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Dielectrophoretic trapping of suspended particles by selective pyroelectric effect in lithium niobate crystals

Simonetta Grilli and Pietro Ferraro

Appl. Phys. Lett. 92, 232902 (2008); http://dx.doi.org/10.1063/1.2943319 (3 pages) | Cited 14 times

Online Publication Date: 10 June 2008

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We have developed a dielectrophoretic approach for trapping suspended dielectric particles. The electric forces were produced by using the pyroelectric effect in periodically poled lithium niobate substrates. Complex electric field distributions can be built up through an appropriate control of the temperature and the particles can be distributed according to the geometry of the reversed ferroelectric domain structure. The electrode-less configuration makes the technique easier to accomplish compared to conventional dielectrophoretic devices, with interesting possibilities of applications in the field of biology and biomedicine.
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87.50.ch Electrophoresis/dielectrophoresis and other mechanical effects
81.40.Jj Elasticity and anelasticity, stress-strain relations

Local probing of relaxation time distributions in ferroelectric polymer nanomesas: Time-resolved piezoresponse force spectroscopy and spectroscopic imaging

Brian J. Rodriguez, Stephen Jesse, Jihee Kim, Stephen Ducharme, and Sergei V. Kalinin

Appl. Phys. Lett. 92, 232903 (2008); http://dx.doi.org/10.1063/1.2942390 (3 pages) | Cited 9 times

Online Publication Date: 11 June 2008

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Time-resolved piezoresponse force spectroscopy (TR-PFS) and spectroscopic imaging are developed to probe the spatial variability of relaxation behavior in nanoscale ferroelectric materials and structures. TR-PFS was applied to study polarization dynamics in polyvinylidine fluoride and trifluoroethylene nanomesas. We demonstrate that polarization relaxation in ferroelectric polymers is slow even on the ∼ 10 nm length scale of piezoresponse force microscopy (PFM) signal generation. Furthermore, the relaxation times are found to be nonuniform within the nanomesa, indicative of a complex internal structure. The applicability of TR-PFM for studies of polarization dynamics in ferroelectric polymers and relaxors is discussed.
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77.55.-g Dielectric thin films
77.84.Jd Polymers; organic compounds
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects

Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si3N4 as gate dielectric

J. F. Zheng, W. Tsai, W. P. Li, X. W. Wang, and T. P. Ma

Appl. Phys. Lett. 92, 232904 (2008); http://dx.doi.org/10.1063/1.2943148 (3 pages) | Cited 3 times

Online Publication Date: 11 June 2008

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We report n-channel enhancement-mode GaAs metal-insulator-semiconductor Field Effect Transistors (MISFETs) with ∼ 6 nm equivalent oxide thickness of molecular-and-atomic (MAD) depositioned Si3N4 as the gate dielectric. The GaAs based MISFETs were fabricated using a gate-first process that preserved the channel inversion characteristic in MIS capacitor structures [ W. P. Li, X. W. Wang, Y. X. Liu, and T. P. Ma, Appl. Phys. Lett. 90, 193503 (2007) ]. The channel inversion characteristics of the GaAs MIS capacitors, measured by the quasistatic C-V (capacitor-voltage) technique, were well maintained throughout the entire fabrication process with temperatures up to 800 °C. C-V hysteresis as small as 100 mV was achieved. The Si3N4-gated GaAs MISFETs clearly demonstrated the enhancement-mode, gate-modulated Id-Vd transfer characteristics with channel inversion.
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85.30.Tv Field effect devices

dc leakage behavior and conduction mechanism in (BiFeO3)m(SrTiO3)m superlattices

R. Ranjith, W. Prellier, Jun Wei Cheah, Junling Wang, and Tom Wu

Appl. Phys. Lett. 92, 232905 (2008); http://dx.doi.org/10.1063/1.2937843 (3 pages) | Cited 9 times

Online Publication Date: 12 June 2008

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Leakage current behavior of (BiFeO3)m(SrTiO3)m superlattice structures was studied and analyzed at different temperatures (303–473 K) in the light of various models. While bulk limited Poole–Frenkel emission was observed to dominate the leakage current in the temperature range of 303–383 K, the space charge limited conduction was observed up to 473 K. With a Poole–Frenkel emission type of conduction, the activation energy range of ∼ 0.06–0.25 eV was calculated. The physical parameters, calculated from the analysis, correlate with the intrinsic properties. Such analysis of leakage current facilitates interface engineering of heterostructures for device applications.
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73.63.-b Electronic transport in nanoscale materials and structures
72.20.Ht High-field and nonlinear effects
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films

Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe/Si substrates

Jiyoung Jang, Tae Joo Park, Ji-Hwan Kwon, Jae Hyuck Jang, Cheol Seong Hwang, and Miyoung Kim

Appl. Phys. Lett. 92, 232906 (2008); http://dx.doi.org/10.1063/1.2938877 (3 pages) | Cited 4 times

Online Publication Date: 12 June 2008

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In this investigation, HfO2 thin films were deposited on strained and strain-relaxed epitaxial-SiGe/Si substrates, and subsequently subjected to annealing. Electron energy-loss spectroscopy analysis was used to investigate the electronic structure and composition of the film as well as the interfacial layer (IL). While the energy-loss function of the dielectric films revealed predominant Si diffusion in the strained substrates, post deposition annealing (PDA) significantly influenced the diffusion and altered the local composition of the IL in strain-relaxed substrates. Analysis of electronic structures revealed the origin of significant loss of Ge atoms at the IL during PDA.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
79.20.Uv Electron energy loss spectroscopy
71.20.Ps Other inorganic compounds
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.35.Fx Diffusion; interface formation

Unusual strain dependence of tunability in highly (100)-oriented Mn-doped barium strontium stannate titanate thin films

Shengbo Lu and Zhengkui Xu

Appl. Phys. Lett. 92, 232907 (2008); http://dx.doi.org/10.1063/1.2945290 (3 pages) | Cited 2 times

Online Publication Date: 13 June 2008

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Highly (100)-oriented (Ba0.7Sr0.3)(Sn0.2Ti0.8−xMnx)O3 (Mn-BSSnT) (x = 0%, 0.2%, 0.4%, 0.6%, and 1%) thin films were fabricated on (La0.7Sr0.3)CoO3/LaAlO3 substrates by pulsed laser deposition. Both elastic residual strain and inhomogeneous strain were measured by x-ray diffraction techniques. The effect of strain on dielectric properties of the Mn-BSSnT thin films was investigated as a function of the Mn content. It was found that inhomogeneous strain has a greater effect on the tunability than the elastic residual strain does. The tunability decreases with increasing inhomogeneous strain and can be manipulated by changing Mn doping content, which is beneficial to real tunable device applications.
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77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
68.60.Bs Mechanical and acoustical properties
61.72.U- Doping and impurity implantation
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