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Applied Physics Letters / Volume 92 / Issue 25 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 92, 253311 (2008); http://dx.doi.org/10.1063/1.2953079 (3 pages)

Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors

Koichi Yamada1, J. Takeya2,3, T. Takenobu4,5, and Y. Iwasa4,5

1Materials Science Research Laboratory,CRIEPI, Komae, Tokyo 201-8511, Japan
2Graduate School of Science,Osaka University, Machikaneyama, Toyonaka 560-0043, Japan
3PRESTO, Japan Science and Technology Agency, Kawaguchi 330-0012, Japan
4Institute for Material Research, Tohoku University, Sendai 980-8577, Japan
5CREST, Japan Science and Technology Agency, Kawaguchi 330-0012, Japan

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(Received 16 February 2008; accepted 10 June 2008; published online 27 June 2008)

The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable n-type single-crystal field-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the n-type operations for the single crystals with sufficiently large electron affinity. Mobility values are ∼ 5×10−3 cm2 V−1 s−1, which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of n-type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

dielectric materials, electrodes, field effect transistors

PACS

  • 85.30.Tv

    Field effect devices

  • 77.84.-s

    Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2953079

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) Transfer characteristics of a PTCDA single-crystal FET with Ag electrodes and PMMA/SiO2 dielectrics under ambient laboratory conditions. (b) Output characteristics of the same sample.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Main panel: transfer characteristics of a PTCDA single-crystal FET with Ca electrodes and PMMA/SiO2 dielectrics under an inert N2 atmosphere. Inset: output characteristics of the same sample.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Transfer characteristics of PTCDA single-crystal FETs with different gate dielectrics in air. The data are plotted as a function of gate voltage normalized by the thickness and dielectric constant for a direct comparison of the performance of devices with similar channel dimensions (L/W = 0.5–1.0).

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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