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23 Jun 2008

Volume 92, Issue 25, Articles (25xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 254102 (2008); http://dx.doi.org/10.1063/1.2945893 (3 pages)

M. Trinker, S. Groth, S. Haslinger, S. Manz, T. Betz, S. Schneider, I. Bar-Joseph, T. Schumm, and J. Schmiedmayer
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High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors

Wanjun Chen, King-Yuen Wong, Wei Huang, and Kevin J. Chen

Appl. Phys. Lett. 92, 253501 (2008); http://dx.doi.org/10.1063/1.2951615 (3 pages) | Cited 22 times

Online Publication Date: 25 June 2008

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A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-FER) with low turn-on voltage is demonstrated using the same fabrication process as that for normally off AlGaN/GaN HEMT, providing a low-cost solution for GaN power integrated circuits. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 10 μm features a forward turn-on voltage of 0.63 V at a current density of 100 A/cm2. This device also exhibits a reverse breakdown voltage (BV) of 390 V at a current level of 1 mA/mm and a specific on resistance (RON,sp) of 1.4 mΩ cm2, yielding a figure of merit (BV2/RON,sp) of 108 MW/cm2. The excellent device performance, coupled with the lateral device structure and process compatibility with AlGaN/GaN HEMT, make the proposed L-FER a promising candidate for GaN power integrated circuits.
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85.30.Tv Field effect devices
85.30.Kk Junction diodes
85.30.De Semiconductor-device characterization, design, and modeling

Highly efficient green phosphorescent organic light-emitting diodes with simplified device geometry

A. Haldi, B. Domercq, B. Kippelen, R. D. Hreha, J.-Y. Cho, and S. R. Marder

Appl. Phys. Lett. 92, 253502 (2008); http://dx.doi.org/10.1063/1.2952452 (3 pages) | Cited 9 times

Online Publication Date: 25 June 2008

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We report on the performance of green phosphorescent organic light-emitting diodes based on the well-known host 4,4′-di(carbazol-9-yl)-biphenyl and the green phosphor emitter fac tris(2-phenylpyridinato-N,C2′) iridium. Using a spin-coated hole-injection/transport layer of poly(N-vinyl-carbazole) and a hole-blocking/electron-transport layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, devices with efficiencies of 21.2% and 72 cd/A at 100 cd/m2 were obtained in a simplified device geometry that requires the deposition of only two organic layers from the vapor phase.
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85.60.Jb Light-emitting devices

Robust reproducible large-area molecular rectifier junctions

Hui-Juan Che, Perq-Jon Chia, Lay-Lay Chua, Sankaran Sivaramakrishnan, Jie-Cong Tang, Andrew T. S. Wee, Hardy S. O. Chan, and Peter K. H. Ho

Appl. Phys. Lett. 92, 253503 (2008); http://dx.doi.org/10.1063/1.2940592 (3 pages) | Cited 1 time

Online Publication Date: 25 June 2008

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Stable rectifying molecular junctions have been obtained by sandwiching self-assembled monolayer films containing “push-pull” donor-π-acceptor (D-π-A) moieties between Au and poly(3,4-ethylenedioxythiophene) electrodes. These D-π-A moieties possess moderate molecular dipoles, but assemble into films with nearly zero dipole moment due to adoption of high average tilt angles. Nevertheless reproducible and well-behaved rectifications (ratio up to 3.3) in the expected polarity were obtained. At low biases, the current-voltage characteristics follow Simmon’s tunneling theory with reasonable barrier heights and an effective tunnel mass of ∼ 0.5me. This suggests that asymmetric tunneling, and not carrier injection, is the origin of the rectification.
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85.65.+h Molecular electronic devices

High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

Jan Benick, Bram Hoex, M. C. M. van de Sanden, W. M. M. Kessels, Oliver Schultz, and Stefan W. Glunz

Appl. Phys. Lett. 92, 253504 (2008); http://dx.doi.org/10.1063/1.2945287 (3 pages) | Cited 56 times

Online Publication Date: 25 June 2008

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In order to utilize the full potential of solar cells fabricated on n-type silicon, it is necessary to achieve an excellent passivation on B-doped emitters. Experimental studies on test structures and theoretical considerations have shown that a negatively charged dielectric layer would be ideally suited for this purpose. Thus, in this work the negative-charge dielectric Al2O3 was applied as surface passivation layer on high-efficiency n-type silicon solar cells. With this front surface passivation layer, a confirmed conversion efficiency of 23.2% was achieved. For the open-circuit voltage Voc of 703.6 mV, the upper limit for the emitter saturation current density J0e, including the metalized area, has been evaluated to be 29 fA/cm2. This clearly shows that an excellent passivation of highly doped p-type c-Si can be obtained at the device level by applying Al2O3.
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84.60.Jt Photoelectric conversion

Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks

E. Miranda, P. Falbo, M. Nafría, and F. Crupi

Appl. Phys. Lett. 92, 253505 (2008); http://dx.doi.org/10.1063/1.2949748 (3 pages) | Cited 1 time

Online Publication Date: 25 June 2008

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A microscopic picture for the progressive leakage current growth in electrically stressed HfxSi1−xON/SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. The breakdown spot is modeled as a nanoconstriction connecting two electron reservoirs. We show that after eliminating the tunneling current component that flows through the nondamaged device area, the postbreakdown conductance exhibits levels of the order of the quantum unit 2e2/h, where e is the electron charge and h the Planck’s constant, as is expected for atomic-sized contacts. Similarities and differences with previous studied systems are discussed.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å  using stacked HfAlOx/HfO2 gate dielectric

Han Zhao, Davood Shahrjerdi, Feng Zhu, Hyoung-Sub Kim, Injo OK, Manghong Zhang, Jung Hwan Yum, Sanjay K. Banerjee, and Jack C. Lee

Appl. Phys. Lett. 92, 253506 (2008); http://dx.doi.org/10.1063/1.2943186 (3 pages) | Cited 18 times

Online Publication Date: 25 June 2008

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We present InP metal-oxide-semiconductor capacitors (MOSCAPs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) with stacked HfAlOx/HfO2 gate dielectric deposited by atomic layer deposition. Compared with single HfO2, the use of stacked HfAlOx/HfO2 results in better interface quality with InP substrate, as illustrated by smaller frequency dispersion and lower leakage current density. The equivalent oxide thickness of MOSCAPs with 10 Å HfAlOx/25 Å HfO2 stacked gate dielectric is 12 Å. The MOSFETs with this gate dielectric achieve two times higher transconductance than those with single 35 Å HfO2. They also exhibit drive current of 60 mA/mm and subthreshold swing of 83 mV/decade for 5 μm gate length.
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85.30.Tv Field effect devices

Logic circuits using solution-processed single-walled carbon nanotube transistors

Ryo Nouchi, Haruo Tomita, Akio Ogura, Hiromichi Kataura, and Masashi Shiraishi

Appl. Phys. Lett. 92, 253507 (2008); http://dx.doi.org/10.1063/1.2949686 (3 pages) | Cited 6 times

Online Publication Date: 26 June 2008

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This letter reports on the realization of logic circuits employing solution-processed networks of single-walled carbon nanotubes. We constructed basic logic gates (inverter and NAND) with n- and p-type field-effect transistors fabricated by solution-based chemical doping. Complementary metal-oxide-semiconductor inverters exhibited voltage gains of up to 20, which illustrates the great potential of carbon nanotube networks for printable flexible electronics.
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84.30.Sk Pulse and digital circuits
85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors

Sangwoo Kim, Jeramy D. Zimmerman, Paolo Focardi, Arthur C. Gossard, Dong Ho Wu, and Mark S. Sherwin

Appl. Phys. Lett. 92, 253508 (2008); http://dx.doi.org/10.1063/1.2947587 (3 pages) | Cited 11 times

Online Publication Date: 27 June 2008

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A first generation of antenna-coupled GaAs metal-semiconductor-field-effect-transistors (MESFETs) is fabricated, modeled, and tested for room-temperature terahertz detection. For fixed excitation frequencies between 0.14 and 1 THz, the source-drain current (signal) is monitored as the gate and drain voltages are varied. The signal shows resonances when applied voltages sweep the charge density in the MESFET through values at which the bulk plasmon is resonant with the excitation frequency. For these unoptimized devices, the measured system noise-equivalent power is ∼ 5×10−8 W/Hz1/2; the electronics-limited response time is 10 ns.
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85.30.Tv Field effect devices

InAs nanowire metal-oxide-semiconductor capacitors

Stefano Roddaro, Kristian Nilsson, Gvidas Astromskas, Lars Samuelson, Lars-Erik Wernersson, Olov Karlström, and Andreas Wacker

Appl. Phys. Lett. 92, 253509 (2008); http://dx.doi.org/10.1063/1.2949080 (3 pages) | Cited 29 times

Online Publication Date: 27 June 2008

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We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm  HfO2 layer and using a top Cr/Au metallization as one of the capacitor’s electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.
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84.32.Tt Capacitors
85.40.Ls Metallization, contacts, interconnects; device isolation

Quantum-dot/quantum-well mixed-mode infrared photodetectors for multicolor detection

Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsiun Lin, Shih-Yen Lin, and Meng-Chyi Wu

Appl. Phys. Lett. 92, 253510 (2008); http://dx.doi.org/10.1063/1.2953067 (3 pages) | Cited 2 times

Online Publication Date: 27 June 2008

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Quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetectors are demonstrated in this letter for multicolor detection in both the midwavelength infrared (MWIR) and long-wavelength infrared (LWIR) ranges. Responses at 4.3, 5.6, and 10.3 μm are observed for the device. The polarization-dependent response of the device has shown that the higher normal-incident absorption is observed for the MWIR peaks, which suggest that the intraband transitions in the QD structure are responsible for the MWIR peaks while the intraband transition in the QW region is responsible for the LWIR peak. A model is also established to explain the transition mechanisms of the device.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.60.Dq Photometers, radiometers, and colorimeters
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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