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Applied Physics Letters / Volume 92 / Issue 26 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 92, 263302 (2008); http://dx.doi.org/10.1063/1.2924771 (3 pages)

Organic solar cells with solution-processed graphene transparent electrodes

Junbo Wu1, Héctor A. Becerril2, Zhenan Bao2, Zunfeng Liu3, Yongsheng Chen3, and Peter Peumans4

1Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
2Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
3Key Laboratory for Functional Polymer Materials and Center for Nanoscale Science and Technology, College of Chemistry, Institute of Polymer Chemistry, Nankai University, Tianjin 300071, People’s Republic of China
4Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

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(Received 22 January 2008; accepted 25 March 2008; published online 1 July 2008)

We demonstrate that solution-processed graphene thin films can serve as transparent conductive anodes for organic photovoltaic cells. The graphene electrodes were deposited on quartz substrates by spin coating of an aqueous dispersion of functionalized graphene, followed by a reduction process to reduce the sheet resistance. Small molecular weight organic solar cells can be directly deposited on such graphene anodes. The short-circuit current and fill factor of these devices on graphene are lower than those of control device on indium tin oxide due to the higher sheet resistance of the graphene films. We anticipate that further optimization of the reduction conditions will improve the performance of these graphene anodes.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrical resistivity, electrochemical electrodes, graphite, solar cells, spin coating, thin films

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2924771

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. C. W. Tang, Appl. Phys. Lett. 48, 183 (1986)APPLAB000051000012000913000001.
  2. P. Peumans, A. Yakimov, and S. R. Forrest, J. Appl. Phys. 93, 3693 (2003)JAPIAU000093000007003693000001.
  3. C. W. Tang and S. A. Van Slyke, Appl. Phys. Lett. 12, 913 (1987).
  4. M. A. Baldo, D. F. O'Brien, Y. You, A. Shoustikov, S. Sibley, M. E. Thompson, and S. R. Forrest, Nature (London) 395, 151 (1998).
  5. G. Yu, Y. Cao, J. Wang, J. McElvain, and A. J. Heeger, Synth. Met. 102, 904 (1999). [Inspec] [ISI]
  6. P. Peumans, V. Bulovic, and S. R. Forrest, Appl. Phys. Lett. 76, 3855 (2000)APPLAB000076000026003855000001.
  7. S. R. Forrest, Nature (London) 428, 911 (2004). [MEDLINE]
  8. Z. Chen, B. Cotterell, W. Wang, E. Guenther, and S.-J. Chua, Thin Solid Films 394, 201 (2001).
  9. Z. Wu, Z. Chen, X. Du, J. M. Logan, J. Sippel, M. Nikolou, K. Kamaras, J. R. Reynolds, D. B. Tanner, A. F. Hebard, and A. G. Rinzler, Science 305, 1273 (2004). [MEDLINE]
  10. T. M. Barnes, X. Wu, J. Zhou, A. Duda, J. van de Lagemaat, T. J. Coutts, C. L. Weeks, D. A. Britz, and P. Glatkowski, Appl. Phys. Lett. 90, 243503 (2007)APPLAB000090000024243503000001. [ISI]
  11. M. W. Rowell, M. A. Topinka, M. D. McGehee, H.-J. Prall, G. Dennler, N. S. Sariciftci, L. Hu, and G. Gruner, Appl. Phys. Lett. 88, 233506 (2006)APPLAB000088000023233506000001.
  12. M.-G. Kang and L. J. Guo, Adv. Mater. (Weinheim, Ger.) 19, 1391 (2007).
  13. J.-Y. Lee, S. T. Connor, Y. Cui, and P. Peumans, Nano Lett. 8, 689 (2008). [MEDLINE]
  14. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). [Inspec] [MEDLINE]
  15. S. Watcharotone, D. A. Dikin, S. Stankovich, R. Piner, I. Jung, G. H. B. Dommett, G. Evmenenko, S.-E. Wu, S.-F. Chen, C.-P. Liu, S. T. Nguyen, and R. S. Ruoff, Nano Lett. 7, 1888 (2007). [MEDLINE]
  16. C. Gómez-Navarro, R. T. Weitz, A. M. Bittner, M. Scolari, A. Mews, M. Burghard, and K. Kern, Nano Lett. 7, 3499 (2007). [MEDLINE]
  17. X. Wang, L. Zhi, and K. Mullen, Nano Lett. 8, 323 (2008). [MEDLINE]
  18. E. Rollings, G.-H. Gweon, S. Y. Zhou, B. S. Mun, J. L. McChesney, B. S. Hussain, A. V. Fedorov, P. N. First, W. A. de Heer, and A. Lanzara, J. Phys. Chem. Solids 67, 2172 (2006). [Inspec]
  19. W. S. Hummers, Jr. and R. E. Offeman, J. Am. Chem. Soc. 80, 1339 (1958).
  20. M. Hirata, T. Gotou, S. Horiuchi, M. Fujiwara, and M. Ohba, Carbon 42, 2929 (2004). [Inspec]
  21. H. A. Becerril, J. Mao, Z. Liu, R. M. Stoltenberg, Z. Bao, and Y. Chen, ACS Nano 2, 463 (2008).
  22. S. R. Forrest, Chem. Rev. (Washington, D.C.) 97, 1793 (1997). [MEDLINE]
  23. P. Peumans and S. R. Forrest, Appl. Phys. Lett. 79, 126 (2001)APPLAB000079000001000126000001.
  24. J. Xue, S. Uchida, B. P. Rand, and S. R. Forrest, Appl. Phys. Lett. 84, 3013 (2004)APPLAB000084000016003013000001.
  25. H. Ago, T. Kugler, F. Cacialli, K. Petritsch, R. H. Friend, W. R. Salaneck, Y. Ono, T. Yamabe, and K. Tanaka, Synth. Met. 103, 2494 (1999).
  26. P. G. Schroeder, M. W. Nelson, B. A. Parkinson, and R. Schlaff, Surf. Sci. 459, 349 (2000). [Inspec] [ISI]
  27. J. Shewchun, J. Dubow, C. W. Wilmsen, R. Singh, D. Burk, and J. F. Wager, J. Appl. Phys. 50, 2832 (1979)JAPIAU000050000004002832000001. [ISI]
  28. N. Bakasybramanian and A. Subrahmanyam, J. Electrochem. Soc. 138, 322 (1991)JESOAN000138000001000322000001. [ISI]
  29. F. Nüesch, L. J. Rothberg, E. W. Forsythe, Q. T. Le, and Y. Gao, Appl. Phys. Lett. 74, 880 (1999)APPLAB000074000006000880000001.
  30. A. Liu, S. Zhao, S.-B. Rim, J. Wu, M. Konemann, P. Erk, and P. Peumans, Adv. Mater. (Weinheim, Ger.) 20, 1065 (2008).

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Figures (click on thumbnails to view enlargements)

FIG.1
AFM images of reduced (a) thin (<10 nm) and (b) thick (>10 nm) graphene films. The scan size is 3 μm in (a) and 8 μm in (b).

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Transmittance at λ = 550 nm (triangles) and sheet resistance (circles) as a function of the graphene film thickness for both reduction methods: vacuum annealing at 1100 °C (open symbols) and hydrazine treatment and argon annealing at 400 °C (filled symbols).

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Transmittance as a function of wavelength for graphene films of various thicknesses. The graphene films were reduced by the hydrazine treatment and argon annealing at 400 °C.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
(a) Current density voltage (J-V) curves for an OPV cell with layer structure of 35 nm CuPc/50 nm C60/10 nm BCP/100 nm Ag on graphene (circles) and ITO (squares) in the dark (filled symbols) and under 85 mW/cm2 AM1.5G simulated solar illumination (open symbols). The sheet resistance and transmittance of the graphene film are ∼ 100 kΩ/sq and 95%, respectively. (b) J-V curves for OPV cells on ITO (squares) and three different graphene films (circles, triangles, and inverted triangles) under AM1.5G simulated solar illumination. Using the data for the cell on ITO, the J-V curves of the cells on graphene are reproduced by adding a resistive voltage drop to the voltage axis (solid line, dashed line, and short dashed line) and a shunt resistance.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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