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30 Jun 2008

Volume 92, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 92, 264101 (2008); http://dx.doi.org/10.1063/1.2951485 (3 pages)

Wei Xiang Jiang, Tie Jun Cui, Qiang Cheng, Jessie Yao Chin, Xin Mi Yang, Ruopeng Liu, and David R. Smith
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GaN for x-ray detection

Jean-Yves Duboz, Marguerite Laügt, David Schenk, Bernard Beaumont, Jean-Luc Reverchon, Andreas D. Wieck, and Tino Zimmerling

Appl. Phys. Lett. 92, 263501 (2008); http://dx.doi.org/10.1063/1.2951619 (3 pages) | Cited 9 times

Online Publication Date: 30 June 2008

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The potential of GaN based materials for x-ray detection is investigated. The absorption coefficient in GaN is measured as a function of photon energy between 6 and 40 keV. Metal-semiconductor-metal photodetectors are fabricated and characterized. The response dependence on bias, the temporal dynamics, and the response dependence on detector geometry all together point toward a mixing of photovoltaic and photoconductive effects. Thanks to a large photoconductive gain, the detector has a decent responsivity at the expense of a large response time.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
29.40.Wk Solid-state detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Toshiyuki Oishi, Yuji Abe, Yasunori Tokuda, and Yoshinobu Aoyagi

Appl. Phys. Lett. 92, 263502 (2008); http://dx.doi.org/10.1063/1.2949087 (3 pages) | Cited 16 times

Online Publication Date: 30 June 2008

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The channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. We demonstrated a remarkable breakdown voltage enhancement in these AlGaN channel HEMTs. The obtained maximum breakdown voltages were 463 and 1650 V in the Al0.53Ga0.47N/Al0.38Ga0.62N HEMT with the gate-drain distances of 3 and 10 μm, respectively. This result is very promising for the further higher power operation of high-frequency HEMTs.
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85.30.Tv Field effect devices

Ferroelectric bimorph cantilever with self-assembled silane layer

Andriy Nadtochiy, T. Keith Hollis, and Igor Ostrovskii

Appl. Phys. Lett. 92, 263503 (2008); http://dx.doi.org/10.1063/1.2952281 (3 pages)

Online Publication Date: 1 July 2008

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Bimorph ferroelectric microcantilevers are fabricated at the locations of the interdomain walls of inversely poled lithium niobate. The cantilevers are excited via the piezoelectric effect using a rf voltage and the natural vibrations are observed via optical detection. The self-assembling layers of two different silanes are chemically deposited on the microcantilevers. The presence of the silane layers is detected by two independent methods: optical detection of a low frequency shift of cantilever natural vibrations and the analysis of Raman spectral lines from the Silane layers. Possible applications include smart biosensors in real time domains.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.65.-j Piezoelectricity and electromechanical effects
78.30.Hv Other nonmetallic inorganics
07.10.Cm Micromechanical devices and systems

Effect of CdSe quantum dots on hole transport in poly(3-hexylthiophene) thin films

Kusum Kumari, Suresh Chand, Pankaj Kumar, Shailesh N. Sharma, V. D. Vankar, and Vikram Kumar

Appl. Phys. Lett. 92, 263504 (2008); http://dx.doi.org/10.1063/1.2955524 (3 pages) | Cited 6 times

Online Publication Date: 3 July 2008

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This letter demonstrates the effect of cadmium selenide (CdSe) quantum dots on hole transport in poly(3-hexylthiophene) (P3HT) thin films. Current-voltage characteristics of P3HT and P3HT:CdSe thin films have been studied in the temperature range of 288–85 K, in hole only device configurations, i.e., indium tin oxide (ITO)/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/P3HT/Au and ITO/PEDOT:PSS/P3HT:CdSe/Au. The incorporation of CdSe quantum dots in P3HT results in the enhancement in hole current and switches the transport from dual conduction mechanism, viz., trap and mobility models to only trap model. This is attributed to the reduction in characteristic trap energy from 60 to 32 meV and trap density from 2.5×1018 to 1.7×1018 cm−3.
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73.61.Ph Polymers; organic compounds
73.50.Dn Low-field transport and mobility; piezoresistance

Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient

Joonmyoung Lee, Hokyung Park, Hyejung Choi, Musarrat Hasan, Minseok Jo, Man Chang, Byoung Hun Lee, Chang Seo Park, Chang Yong Kang, and Hyunsang Hwang

Appl. Phys. Lett. 92, 263505 (2008); http://dx.doi.org/10.1063/1.2953192 (3 pages) | Cited 3 times

Online Publication Date: 3 July 2008

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To increase the effective work function of a W/TiSiN metal gate stack without an equivalent oxide thickness (EOT) increase, we developed a process for high-pressure postmetallization annealing in diluted oxygen ambient. Compared with annealing in an atmospheric pressure, oxygen postmetallization annealing (PMA) in a high-pressure ambient (1–20 atm) showed further modulation of the effective work function (4.6–4.8 eV) without an EOT increase. These differences can be attributed to total amounts of oxygen supplied to gate stack system. Additionally, the origin of EOT increase after the oxygen PMA was attributed to oxidation of the capping metal.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
61.72.Cc Kinetics of defect formation and annealing
81.65.Mq Oxidation
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