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30 Jun 2008

Volume 92, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 92, 264101 (2008); http://dx.doi.org/10.1063/1.2951485 (3 pages)

Wei Xiang Jiang, Tie Jun Cui, Qiang Cheng, Jessie Yao Chin, Xin Mi Yang, Ruopeng Liu, and David R. Smith
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Room temperature ferromagnetism and ferroelectricity in cobalt-doped LiNbO3 film

C. Song, C. Z. Wang, Y. C. Yang, X. J. Liu, F. Zeng, and F. Pan

Appl. Phys. Lett. 92, 262901 (2008); http://dx.doi.org/10.1063/1.2952772 (3 pages) | Cited 6 times

Online Publication Date: 1 July 2008

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(5 at. %) cobalt-doped LiNbO3 (Co:LN) films were prepared by combinatorial laser molecular-beam epitaxy on Si (100). The Co:LN films with Co2+ replacing Nb exhibit room temperature ferromagnetism of 1.2μB/Co and Curie temperature of ∼ 540 K. Through a Ag/Co:LN/Si metal-ferroelectric-semiconductor field effect transistor configuration, ferroelectric measurements show that the films display hysteresis loops at 300 K and ferroelectric transition temperature of ∼ 610 K. The hysteresis and the asymmetry in capacitance-voltage and leakage-voltage curves are ascribed to trapping/detrapping process of charges at the Co:LN/Si interface. The coexistence of room temperature ferromagnetism and ferroelectricity makes Co:LN a promising single-phase multiferroic.
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77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer

X. F. Zhang, J. P. Xu, C. X. Li, P. T. Lai, C. L. Chan, and J. G. Guan

Appl. Phys. Lett. 92, 262902 (2008); http://dx.doi.org/10.1063/1.2954012 (3 pages) | Cited 3 times

Online Publication Date: 2 July 2008

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HfTa-based oxide and oxynitride with or without TaOxNy interlayer are fabricated on Ge substrate to form metal-oxide-semiconductor (MOS) capacitors. Their electrical properties and reliabilities are measured and compared. The results show that the MOS capacitor with a gate stack of HfTa-based oxynitride and thin TaOxNy interlayer exhibits low interface-state/oxide-charge densities, low gate leakage, small hysteresis, small capacitance equivalent thickness ( ∼ 0.94 nm), and high dielectric constant ( ∼ 24). All these should be attributed to the blocking role of the TaOxNy interlayer against penetration of O into the Ge substrate and interdiffusions of Hf, Ge, and Ta, thus effectively suppressing the formation of unstable low-k GeOx and giving a superior TaOxNy/Ge interface. Moreover, incorporation of N into both the interlayer and high-k dielectric greatly improves device reliability through the formation of strong N-related bonds.
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84.32.Tt Capacitors
85.30.Tv Field effect devices

Integrated circuits based on nanoscale vacuum phototubes

Gilad Diamant, Erez Halahmi, Leeor Kronik, Jeff Levy, Ron Naaman, and John Roulston

Appl. Phys. Lett. 92, 262903 (2008); http://dx.doi.org/10.1063/1.2944267 (3 pages) | Cited 2 times

Online Publication Date: 2 July 2008

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We present and experimentally verify a concept for electronic devices based on nanoscale vacuum phototubes. Such devices are expected to be both reliable and amenable to large-scale integration. We further suggest several generalizations of the concept and discuss possible applications and advantages.
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85.60.Ha Photomultipliers; phototubes and photocathodes
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Large electrostrain near the phase transition temperature of (Bi0.5Na0.5)TiO3–SrTiO3 ferroelectric ceramics

Yuji Hiruma, Yoshitaka Imai, Yoshinori Watanabe, Hajime Nagata, and Tadashi Takenaka

Appl. Phys. Lett. 92, 262904 (2008); http://dx.doi.org/10.1063/1.2955533 (3 pages) | Cited 44 times

Online Publication Date: 3 July 2008

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(1-x)(Bi0.5Na0.5)TiO3–xSrTiO3 (abbreviated as BNST100x) was prepared by a conventional ceramic fabrication process. The depolarization temperature Td, rhombohedral-tetragonal phase transition temperature TR-T, and the temperature Tm of the maximum dielectric constant were determined from the temperature dependence of the dielectric and piezoelectric properties. It is revealed that BNST100x forms a morphotropic phase boundary of rhombohedral ferroelectric and pseudocubic (tetragonal) paraelectric at x = 0.26–0.28 for BNST100x, and a very large strain and normalized strain d33* of 0.29% and 488 pm/V, respectively, were obtained at x = 0.28. In addition, it was clarified that the intermediate phase between TR-T ( ≥ Td) and Tm shows relaxor behavior.
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77.80.B- Phase transitions and Curie point
64.70.K- Solid-solid transitions
77.65.Ly Strain-induced piezoelectric fields
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
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