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30 Jun 2008

Volume 92, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 92, 264101 (2008); http://dx.doi.org/10.1063/1.2951485 (3 pages)

Wei Xiang Jiang, Tie Jun Cui, Qiang Cheng, Jessie Yao Chin, Xin Mi Yang, Ruopeng Liu, and David R. Smith
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Band offset of InGaAs(N)/GaAs interfaces from first principles

Hannu-Pekka Komsa, Eero Arola, and Tapio T. Rantala

Appl. Phys. Lett. 92, 262101 (2008); http://dx.doi.org/10.1063/1.2936074 (3 pages) | Cited 2 times

Online Publication Date: 30 June 2008

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Valence-band offsets of the InGaAs/GaAs(001) and InGaAsN/GaAs(001) interfaces are calculated from first principles. For InGaAs, we study the concentrations up to 25% of indium and for InGaAsN up to 12.5% of indium with 3% of nitrogen. Even though the band offset of the InGaAs/GaAs interface has a nearly linear dependence on the indium concentration, band offset of the InGaAsN/GaAs interface is strongly influenced by the amount of In–N bonds. Even a type-II band offset is found in the case of all indium located near to nitrogen and low strain of the InGaAsN layer.
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71.20.Nr Semiconductor compounds
73.20.-r Electron states at surfaces and interfaces
71.15.-m Methods of electronic structure calculations

Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface

Xuegong Yu, Jinggang Lu, and George Rozgonyi

Appl. Phys. Lett. 92, 262102 (2008); http://dx.doi.org/10.1063/1.2952513 (3 pages) | Cited 7 times

Online Publication Date: 30 June 2008

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This letter has developed a procedure for quantitatively evaluating the electrical levels at a (110)/(100) interfacial grain boundary (GB) in p-type direct silicon bonded wafers by combining current-/capacitance-voltage (I-V,C-V) and capacitance transient techniques. It is found that GB states can be positively charged and induce a high potential barrier. The local distribution of charge density deduced from I-V/C-V measurements shows that the state density is constant, ∼ 2×1012 cm−2, in the energy range Ev+0.36–0.50 eV. Meanwhile, capacitance transient technique reveals the states in the energy range Ev+0.33–0.43 eV with capture cross sections of 10−17 cm2, and the state density is consistent with the results by I-V/C-V deconvolution.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states

Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, and Keisaku Yamada

Appl. Phys. Lett. 92, 262103 (2008); http://dx.doi.org/10.1063/1.2952829 (3 pages) | Cited 1 time

Online Publication Date: 30 June 2008

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The gate leakage behaviors of p- and n-type metal-oxide-semiconductor (p−/nMOS) capacitors with hafnium silicon oxynitride (HfSiON) gate dielectric were microscopically investigated by electron-beam-induced current (EBIC) technique. Carrier separated EBIC measurement has found that in nonstressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. After voltage stress, traps are induced in nMOS and enhanced electron conduction.
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84.32.Tt Capacitors
85.30.Tv Field effect devices

Electromigration induced high fraction of compound formation in SnAgCu flip chip solder joints with copper column

Luhua Xu, Jung-Kyu Han, Jarrett Jun Liang, K. N. Tu, and Yi-Shao Lai

Appl. Phys. Lett. 92, 262104 (2008); http://dx.doi.org/10.1063/1.2953692 (3 pages) | Cited 7 times

Online Publication Date: 1 July 2008

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To overcome the effect of current crowding on electromigration-induced pancake-type void formation in flip chip solder joints, two types of Cu column in 90 μm flip chip SnAgCu solder joints have been studied. They were (1) the solder contacts the Cu column at bottom and side walls and (2) the solder wets only the bottom surface of the copper column. With a current density of 1.6×104 A/cm2 at 135 °C, no failure was detected after 1290 h. However, the resistance increased by about 10% due to the formation of a large fraction of intermetallic compounds. We found that electromigration has accelerated the consumption rate of copper column and converted almost the entire solder joint into intermetallic compound. Mechanically, drop impact test indicates a brittle fracture failure in the intermetallic. The electromigration critical product for the intermetallic is discussed.
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81.20.Vj Joining; welding
66.30.Qa Electromigration

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, and T. Tiedje

Appl. Phys. Lett. 92, 262105 (2008); http://dx.doi.org/10.1063/1.2953176 (3 pages) | Cited 18 times

Online Publication Date: 1 July 2008

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We investigate the electronic properties of GaAs1−xBix by photoluminescence at variable temperature (T = 10–430 K) and high magnetic field (B = 0–30 T). In GaAs0.981Bi0.019, localized state contribution to PL is dominant up to 150 K. At T = 180 K the diamagnetic shift of the free-exciton states reveals a sizable increase in the carrier effective mass with respect to GaAs. Such an increase cannot be accounted for by an enhanced localized character of the valence band states, solely. Instead, it suggests that also the Bloch states of the conduction band are heavily affected by the presence of bismuth atoms.
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73.20.At Surface states, band structure, electron density of states
78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
71.35.-y Excitons and related phenomena
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Extraordinary electroconductance in metal-semiconductor hybrid structures

Yun Wang, A. K. M. Newaz, Jian Wu, S. A. Solin, V. R. Kavasseri, N. Jin, I. S. Ahmed, and I. Adesida

Appl. Phys. Lett. 92, 262106 (2008); http://dx.doi.org/10.1063/1.2955503 (3 pages) | Cited 6 times

Online Publication Date: 2 July 2008

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We report the phenomenon of extraordinary electroconductance in microscopic metal-semiconductor hybrid structures fabricated from GaAs epitaxial layer and a Ti thin film shunt. Four-lead Van der Pauw structures show a gain of 5.2% in electroconductance under +2.5 kV/cm with zero shunt bias. The increase in the sample conductance results from the thermionic field emission of electrons and the geometrical amplification. A model provides good agreement with the experimental data and clearly demonstrates the geometry dependence of the field effect in extraordinary electroconductance (EEC). The differences between EEC devices and field effect transistors, such as junction field effect transistor (FET) and Schottky barrier gate FET, are discussed.
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73.40.Ns Metal-nonmetal contacts
79.40.+z Thermionic emission
79.70.+q Field emission, ionization, evaporation, and desorption
85.30.Tv Field effect devices

Controlled fabrication of single electron transistors from single-walled carbon nanotubes

Paul Stokes and Saiful I. Khondaker

Appl. Phys. Lett. 92, 262107 (2008); http://dx.doi.org/10.1063/1.2955520 (3 pages) | Cited 5 times

Online Publication Date: 3 July 2008

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Single electron transistors (SETs) are fabricated by placing single-walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and charging energies of 12–15 meV with level spacing of ∼ 5 meV were measured from the Coulomb diamond, in agreement with a dot size of ∼ 100 nm, implying that the local gate defines the dot size by bending SWNT at the edges and controls its operation. This “mechanical template” approach may facilitate large scale fabrication of SET devices using SWNT.
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85.35.Kt Nanotube devices
85.35.Gv Single electron devices

Efficient electrical detection of ambipolar acoustic transport in GaAs

P. D. Batista, R. Hey, and P. V. Santos

Appl. Phys. Lett. 92, 262108 (2008); http://dx.doi.org/10.1063/1.2955522 (3 pages) | Cited 3 times

Online Publication Date: 3 July 2008

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We demonstrate a photon detector combining the ambipolar transport of electrons and holes by surface acoustic waves with electrical charge detection using a lateral p-i-n junction. By optimizing photon absorption and the acoustic transport, overall quantum efficiencies of 70% have been achieved for ambipolar transport lengths exceeding 100 μm.
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43.58.-e Acoustical measurements and instrumentation
43.60.Vx Acoustic sensing and acquisition
68.35.Iv Acoustical properties

Epitaxial growth and surface metallic nature of LaNiO3 thin films

K. Tsubouchi, I. Ohkubo, H. Kumigashira, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, and M. Oshima

Appl. Phys. Lett. 92, 262109 (2008); http://dx.doi.org/10.1063/1.2955534 (3 pages) | Cited 15 times

Online Publication Date: 3 July 2008

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In situ epitaxial growth control of LaNiO3 (LNO) films at high oxygen pressure has been successfully achieved using a combination of pulsed laser deposition and high-pressure reflection high-energy electron diffraction (RHEED). RHEED oscillations, indicative of epitaxial layer-by-layer growth, were clearly observed during LNO deposition under optimal conditions. The film surfaces were composed of atomically flat terraces and steps. Detailed photoelectron spectroscopy analysis of LNO grown at the optimal oxygen pressure revealed that Ni ions assume a uniform Ni3+ high-valence state and that the resultant metallic properties are preserved even at the surface and in the interface region between LNO and the LaAlO3 substrate.
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68.55.aj Insulators
81.15.Fg Pulsed laser ablation deposition
75.70.Ak Magnetic properties of monolayers and thin films
75.20.Ck Nonmetals
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Stable response to visible light of InGaN photoelectrodes

Wenjun Luo, Bin Liu, Zhaosheng Li, Zili Xie, Dunjun Chen, Zhigang Zou, and Rong Zhang

Appl. Phys. Lett. 92, 262110 (2008); http://dx.doi.org/10.1063/1.2955828 (3 pages) | Cited 9 times

Online Publication Date: 3 July 2008

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The photoelectrochemical properties of InxGa1−xN/GaN (0 ⩽ x ⩽ 0.20) epitaxial films on sapphire (0001) substrates have been investigated. The flatband potential of InxGa1−xN is shifted to more positive voltages with increasing indium incorporation. In aqueous HBr solution, the turnover number of the In0.20Ga0.80N electrode reaches 847 after 4000 s illumination, which suggests that In0.20Ga0.80N has good photostability. Moreover, In0.20Ga0.80N shows highest visible-light response among InxGa1−xN (0 ⩽ x ⩽ 0.20) and the incident photon conversion efficiency is about 9% at 400–430 nm in the HBr solution.
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78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
82.45.Vp Semiconductor materials in electrochemistry
82.45.Fk Electrodes
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