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14 Jan 2008

Volume 92, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 92, 022509 (2008); http://dx.doi.org/10.1063/1.2807274 (3 pages)

Sang-Koog Kim, Ki-Suk Lee, Young-Sang Yu, and Youn-Seok Choi
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Magnetoelectric coupling in CoFe2O4/SrRuO3/Pb(Zr0.52Ti0.48)O3 heteroepitaxial thin film structure

J. X. Zhang, J. Y. Dai, C. K. Chow, C. L. Sun, V. C. Lo, and H. L. W. Chan

Appl. Phys. Lett. 92, 022901 (2008); http://dx.doi.org/10.1063/1.2830813 (3 pages) | Cited 18 times

Online Publication Date: 14 January 2008

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Epitaxial magnetoelectric Pb(Zr0.52Ti0.48)O3/SrRuO3/CoFe2O4 composite thin films are fabricated on SrTiO3 single crystal substrate by pulsed-laser deposition. x-ray diffraction study reveals their crystalline structure and epitaxial relationship, which is cubic on cubic without in-plane rotation. The good dielectric, ferroelectric, and magnetic properties for the heteroepitaxial films are obtained simultaneously under room temperature, and the magnetoelectric coupling effect is manifested by the magnetic-field-dependent ferroelectric characteristics and spectroscopic dielectric constant.
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75.70.Ak Magnetic properties of monolayers and thin films
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.80.+q Magnetomechanical effects, magnetostriction
81.15.Fg Pulsed laser ablation deposition
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)

In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

E. O’Connor, R. D. Long, K. Cherkaoui, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, P. K. Hurley, B. Brennan, G. Hughes, and S. B. Newcomb

Appl. Phys. Lett. 92, 022902 (2008); http://dx.doi.org/10.1063/1.2829586 (3 pages) | Cited 25 times

Online Publication Date: 14 January 2008

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We have studied an in situ passivation of In0.53Ga0.47As, based on H2S exposure (50–350 °C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO2 using Hf[N(CH3)2]4 and H2O precursors. X-ray photoelectron spectroscopy revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H2S exposure temperatures. Transmission electron microscopy analysis demonstrates a reduction of the interface oxide between the In0.53Ga0.47As epitaxial layer and the amorphous HfO2 resulting from the in situ H2S passivation. The capacitance-voltage and current-voltage behavior of Pd/HfO2/In0.53Ga0.47As/InP structures demonstrates that the electrical characteristics of samples exposed to 50 °C H2S at the end of the metal-organic vapor-phase epitaxy In0.53Ga0.47As growth are comparable to those obtained using an ex situ aqueous (NH4)2S passivation.
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81.65.Rv Passivation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Measuring the microwave frequency relative permittivity of polyetherimide/BaTi4O9 composites by using a rectangular cavity resonator

Cheng-Fu Yang, Chia-Ching Wu, Yi-Zhi Lee, and Ying-Chung Chen

Appl. Phys. Lett. 92, 022903 (2008); http://dx.doi.org/10.1063/1.2831696 (3 pages) | Cited 5 times

Online Publication Date: 15 January 2008

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In this paper, high glass transition temperature (Tg) of polyetherimide (PEI) is used to mix with different weight percent (0–80 wt %) of BaTi4O9 (BT4) ceramic powder to form a flexible PEI/BT4 composite. The relative permittivity of PEI/BT4 composites is developed from 1 to 16 GHz using the “rectangular cavity resonator” method. The relative permittivity of PEI/BT4 composites is calculated by observing the frequencies of resonant cavity modes. From the results of dielectric properties, the relative permittivity of PEI/BT4 composites is almost unchanged as the measured frequency is changed. It conjectures that the polarization mode does not exist in BT4 ceramic powder.
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81.05.Mh Cermets, ceramic and refractory composites
77.84.Lf Composite materials
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Electronic trap characterization of the Sc2O3/La2O3 high-κ gate stack by scanning tunneling microscopy

Y. C. Ong, D. S. Ang, K. L. Pey, Z. R. Wang, S. J. O’Shea, C. H. Tung, T. Kawanago, K. Kakushima, and H. Iwai

Appl. Phys. Lett. 92, 022904 (2008); http://dx.doi.org/10.1063/1.2831907 (3 pages) | Cited 3 times

Online Publication Date: 15 January 2008

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The tunneling current versus voltage characteristic of the Sc2O3/La2O3/SiOx high-κ gate stack is examined using scanning tunneling microscopy in ultrahigh vacuum. Different measurement bias polarities allow information on the location (i.e., in the high-κ or interfacial SiOx layer) of the electronic traps to be extracted. Two types of localized leakage sites may be distinguished. Lowering of the electron barrier height and trap-assisted tunneling are proposed as the two leakage mechanisms.
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73.40.Gk Tunneling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
77.55.-g Dielectric thin films

Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

Sudipta Sarkar, Pradip Kumar Jana, and B. K. Chaudhuri

Appl. Phys. Lett. 92, 022905 (2008); http://dx.doi.org/10.1063/1.2834854 (3 pages) | Cited 16 times

Online Publication Date: 16 January 2008

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Dielectric spectroscopy analysis of the high permittivity (κ ∼ 104) copper (II) oxide (CuO) ceramic shows that the grain contribution plays a major role for the giant-κ value at low temperature, whereas grain boundary (GB) contribution dominates around room temperature and above. Moreover, impedance spectroscopy analysis reveals electrically heterogeneous microstructure in CuO consisting of semiconducting grains and insulating GBs. Finally, the giant dielectric phenomenon exhibited by CuO is attributed to the internal barrier layer (due to GB) capacitance mechanism.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
61.72.Mm Grain and twin boundaries

Rosette screw arms created by ac-domain structures and dislocations in barium titanate during nanoindentation

G. A. Schneider, T. Scholz, and F. J. Espinoza-Beltrán

Appl. Phys. Lett. 92, 022906 (2008); http://dx.doi.org/10.1063/1.2830331 (3 pages) | Cited 2 times

Online Publication Date: 17 January 2008

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The nanoindentation in out-of-plane domains of a {001} oriented BaTiO3 single crystal was performed with a conical indenter of 0.9 μm tip radius. The first pop-in occurs at 5±0.5 mN load. The surface deformation was studied with atomic force microscopy and piezoresponse force microscopy. In addition to dislocation structures inside the remanent indentation, a rosette arm pattern is observed. The four identified screw arms are due to created a-domains as well as to at the free surface emerging dislocations of the {110}〈1math0〉 glide system. For parts of the screw arms, a detailed analysis of the domain and dislocation structure is presented.
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81.40.Lm Deformation, plasticity, and creep
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
77.80.Dj Domain structure; hysteresis
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.Gy Mechanical properties; surface strains

Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

K. B. Chung, M.-H. Cho, U. Hwang, H. J. Kang, D. C. Suh, H. C. Sohn, D.-H. Ko, S. H. Kim, and H. T. Jeon

Appl. Phys. Lett. 92, 022907 (2008); http://dx.doi.org/10.1063/1.2826271 (3 pages) | Cited 8 times

Online Publication Date: 17 January 2008

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The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si–N and Hf–N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf–N bonds. The difference in valence band offset was strongly related to the chemical states of Si–N bonds.
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71.20.Ps Other inorganic compounds
61.72.Cc Kinetics of defect formation and annealing

Fatigue mechanism of the ferroelectric perovskite thin films

Feng Yang, M. H. Tang, Y. C. Zhou, Fen Liu, Y. Ma, X. J. Zheng, J. X. Tang, H. Y. Xu, W. F. Zhao, Z. H. Sun, and J. He

Appl. Phys. Lett. 92, 022908 (2008); http://dx.doi.org/10.1063/1.2835459 (3 pages) | Cited 2 times

Online Publication Date: 17 January 2008

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Incorporating the vacancy electromigration theory into the switching-induced charge-injection mechanism into the local phase decomposition model has led to an analytical model for the dielectric fatigue behavior and the remnant polarization in perovskite structured ferroelectric thin films. The model has allowed us to reproduce the fatigue behavior in various ferroelectric thin films measured under different voltages, temperatures, and frequencies. We concluded the essential reason for electrical fatigue in ferroelectrics is the local phase separation induced directly or indirectly by other fatigue mechanisms proposed in previous papers.
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77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
66.30.Qa Electromigration

Dielectric relaxation and magnetodielectric response in epitaxial thin films of La2NiMnO6

P. Padhan, H. Z. Guo, P. LeClair, and A. Gupta

Appl. Phys. Lett. 92, 022909 (2008); http://dx.doi.org/10.1063/1.2832642 (3 pages) | Cited 34 times

Online Publication Date: 18 January 2008

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Frequency and magnetic field dependent dielectric measurements have been performed on epitaxial thin films of the double perovskite La2NiMnO6, revealing a dielectric relaxation and magnetodielectric effect. The films are grown on Nb-doped and SrRuO3-coated SrTiO3 substrates using the pulsed laser deposition technique. While a rapid dielectric relaxation is observed at ∼ 300 K, the relaxation rate increases dramatically at lower temperatures. Below the Curie temperature of La2NiMnO6, the dielectric constant increases in a magnetic field for a range of temperature. This temperature range depends on magnetic field and measurement frequency. The results are explained by the influence of a magnetic field on the dipolar relaxation.
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77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
75.80.+q Magnetomechanical effects, magnetostriction
77.22.Ch Permittivity (dielectric function)
68.55.A- Nucleation and growth

Origin of high piezoelectric response of Pb(ZrxTi1−x)O3 at the morphotropic phase boundary: Role of elastic instability

Akhilesh Kumar Singh, Sunil Kumar Mishra, Ragini, Dhananjai Pandey, Songhak Yoon, Sunggi Baik, and Namsoo Shin

Appl. Phys. Lett. 92, 022910 (2008); http://dx.doi.org/10.1063/1.2836269 (3 pages) | Cited 10 times

Online Publication Date: 18 January 2008

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Temperature dependent structural changes in a nearly pure monoclinic phase composition (x = 0.525) of Pb(ZrxTi1−x)O3 (PZT) have been investigated using Rietveld analysis of high-resolution synchrotron powder x-ray diffraction data and correlated with changes in the dielectric constant and planar electromechanical coupling coefficient. Our results show that the intrinsic piezoelectric response of the tetragonal phase of PZT is higher than that of the monoclinic phase. It is also shown that the high piezoelectric response of PZT may be linked with an anomalous softening of the elastic modulus (1/S11E) of the tetragonal compositions closest to the morphotropic phase boundary.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
62.20.de Elastic moduli
81.40.Jj Elasticity and anelasticity, stress-strain relations
77.22.Ch Permittivity (dielectric function)

Ag–Ba0.75Sr0.25TiO3 composites with excellent dielectric properties

Jiquan Huang, Yongge Cao, Maochun Hong, and Piyi Du

Appl. Phys. Lett. 92, 022911 (2008); http://dx.doi.org/10.1063/1.2836764 (3 pages) | Cited 19 times

Online Publication Date: 18 January 2008

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The percolative ceramic composites of Ba0.75Sr0.25TiO3/Ag (BST/Ag) with dense microstructure were sintered at a low temperature of 960 °C. Excellent dielectric properties, such as high dielectric constant (εr ∼ 24 000), low dielectric loss, and high dielectric tunability, were reported. The dielectric constant is found to be nearly temperature and frequency independent. It is essential to introduce the low-melting-point metal of silver into BST ceramics for significantly enhancing the dielectric properties of the composites. The superproperties make it potential to be used for electronic devices such as high charge-storage capacitors and tunable filters.
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77.84.Lf Composite materials
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
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