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14 Jan 2008

Volume 92, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 022509 (2008); http://dx.doi.org/10.1063/1.2807274 (3 pages)

Sang-Koog Kim, Ki-Suk Lee, Young-Sang Yu, and Youn-Seok Choi
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Photoluminescence from a single InGaAs epitaxial quantum rod

G. Sęk, P. Podemski, J. Misiewicz, L. H. Li, A. Fiore, and G. Patriarche

Appl. Phys. Lett. 92, 021901 (2008); http://dx.doi.org/10.1063/1.2832635 (3 pages) | Cited 6 times

Online Publication Date: 14 January 2008

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Microphotoluminescence (μ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the μ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2 meV.
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71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
73.21.Cd Superlattices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Modeling boron diffusion gettering of iron in silicon solar cells

A. Haarahiltunen, H. Talvitie, H. Savin, M. Yli-Koski, M. I. Asghar, and J. Sinkkonen

Appl. Phys. Lett. 92, 021902 (2008); http://dx.doi.org/10.1063/1.2833698 (3 pages) | Cited 8 times

Online Publication Date: 14 January 2008

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In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal processing. In the model, both the segregation of iron due to high boron doping concentration and heterogeneous precipitation of iron to the surface of the wafer are taken into account. It is shown, by comparing simulated results with experimental ones, that this model can be used to estimate boron diffusion gettering efficiency of iron under a variety of processing conditions. Finally, the application of the model to phosphorus diffusion gettering is discussed.
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84.60.Jt Photoelectric conversion
61.72.Yx Interaction between different crystal defects; gettering effect

Resonant x-ray scattering from self-assembled InP/GaAs(001) islands: Understanding the chemical structure of quaternary quantum dots

L. N. Coelho, R. Magalhães-Paniago, A. Malachias, J. G. Zelcovit, and M. A. Cotta

Appl. Phys. Lett. 92, 021903 (2008); http://dx.doi.org/10.1063/1.2820756 (3 pages) | Cited 5 times

Online Publication Date: 14 January 2008

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Lattice parameter profiles and the chemical structure of InP self-assembled islands grown on GaAs(001) were determined with x-ray resonant scattering. By accessing four different photon energies, near x-ray absorption edges of two of the atomic species present on the samples, composition maps of all four atomic constituents of these islands were obtained. This experiment was performed for samples grown at two different temperatures and the effect of temperature was associated to Ga-interdiffusion and strain relief in the dots.
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78.70.Ck X-ray scattering
81.16.Dn Self-assembly
81.07.Ta Quantum dots
78.70.Dm X-ray absorption spectra
68.35.Dv Composition, segregation; defects and impurities

Near-zero IR transmission in the metal-insulator transition of VO2 thin films

R. Balu and P. V. Ashrit

Appl. Phys. Lett. 92, 021904 (2008); http://dx.doi.org/10.1063/1.2834367 (3 pages) | Cited 22 times

Online Publication Date: 15 January 2008

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Vanadium dioxide films have been prepared with different thicknesses using radio-frequency magnetron sputtering technique followed by postdeposition annealing in oxygen ambient. Films with a thickness of 300 nm show a switching efficiency of ∼ 74% and most importantly with a near-zero infrared transmission in the switched state. As the film thickness decreases, the inherent transmission in the switched state increases along with reduced switching efficiencies.
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68.55.jm Texture
81.15.Cd Deposition by sputtering
81.40.Gh Other heat and thermomechanical treatments
71.30.+h Metal-insulator transitions and other electronic transitions
78.66.-w Optical properties of specific thin films

Modified Timoshenko formula for bending of ultrathin strained bilayer films

Ji Zang and Feng Liu

Appl. Phys. Lett. 92, 021905 (2008); http://dx.doi.org/10.1063/1.2828043 (3 pages) | Cited 13 times

Online Publication Date: 15 January 2008

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Mechanical bending of nanoscale thin films can be quite different from that of macroscopic thick films. However, current understanding of mechanical bending of nanoscale thin strained bilayer films is often limited within the Timoshenko model [ Timoshenko, J. Opt. Soc. Am. 11, 233 (1925) ], which was originally derived for macroscopic thick films. Here, we derive a modified Timoshenko formula by including the prominent effect of surface stress played in the nanofilms, which gives a much better agreement with the experiments than the classical formula.
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68.60.Bs Mechanical and acoustical properties
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.40.Lm Deformation, plasticity, and creep

Microstructure and recording mechanism of Bi–Fe–(N) layer for high-density write-once optical disk

Hung-Chuan Mai, Tsung-Eong Hsieh, Shiang-Yao Jeng, Chong-Ming Chen, and Jen-Long Wang

Appl. Phys. Lett. 92, 021906 (2008); http://dx.doi.org/10.1063/1.2828335 (3 pages) | Cited 7 times

Online Publication Date: 17 January 2008

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Bi–Fe–(N) thin film as the recording layer of high density digital versatile disk recordable optical disk was developed. For the disk sample with optimized layer structure, maximum partial response signal to noise ratio of 21.1 and minimum simulated bit error rate of 5×10−7 were achieved at the write power = 5.7 mW. Transmission electron microscopy characterization illustrated that the separation of Bi and Fe elements to form the coarse granular structure in the mark regime during laser irradiation comprised of the recording mechanism.
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42.79.Vb Optical storage systems, optical disks

Thermodynamic analysis of hydrogen sorption reactions in Li–Mg–N–H systems

C. Moysés Araújo, Ralph H. Scheicher, and Rajeev Ahuja

Appl. Phys. Lett. 92, 021907 (2008); http://dx.doi.org/10.1063/1.2830703 (3 pages) | Cited 6 times

Online Publication Date: 17 January 2008

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We report a comprehensive first-principles study of the thermodynamics of the hydrogen release reaction from xLiH–yMg(NH2)2 mixtures involving the composition ratios (x = 2, y = 1), (x = 8, y = 3), and (x = 12, y = 3), with special emphasis on the effect of the different intermediate steps. For all three mixing ratios of LiH/Mg(NH2)2 we find that the hydrogen release is initiated by the same reaction with an enthalpy of 46.1 kJ/mol of H2 in excellent agreement with recent experimental results. Additionally, we also investigated the substitution of LiH by MgH2 as reaction partner of Mg(NH2)2 in the fully hydrogenated state.
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68.43.Bc Ab initio calculations of adsorbate structure and reactions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.60.Cx Enthalpies of combustion, reaction, and formation
84.60.-h Direct energy conversion and storage

Kinetic arrest of martensitic transformation in the NiCoMnIn metamagnetic shape memory alloy

Wataru Ito, Kouhei Ito, Rie Y. Umetsu, Ryosuke Kainuma, Keiichi Koyama, Kazuo Watanabe, Asaya Fujita, Katsunari Oikawa, Kiyohito Ishida, and Takeshi Kanomata

Appl. Phys. Lett. 92, 021908 (2008); http://dx.doi.org/10.1063/1.2833699 (3 pages) | Cited 55 times

Online Publication Date: 17 January 2008

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Magnetic and electrical resistivity changes due to a martensitic transformation in large magnetic fields were investigated in a NiCoMnIn alloy. The transformation is interrupted at about 150 K during field cooling and does not proceed with further cooling. The obtained two-phase condition is frozen at low temperatures and zero field heating releases this condition, inducing a “forward” transformation. These unusual phenomena can be explained by an abnormal behavior in the transformation entropy change and an extremely low mobility of the phase interfaces detected at low temperatures.
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64.70.kd Metals and alloys
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
81.30.Kf Martensitic transformations
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
65.40.gd Entropy

Kinetics of mesa overlayer growth: Climbing of adatoms onto the mesa top

Yong Han, Feng Liu, Shao-Chun Li, Jin-Feng Jia, Qi-Kun Xue, and Byeong-Joo Lee

Appl. Phys. Lett. 92, 021909 (2008); http://dx.doi.org/10.1063/1.2827200 (3 pages) | Cited 4 times

Online Publication Date: 17 January 2008

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We have calculated the energy barriers for an adatom climbing up onto a Pb mesa top either over a facet-facet edge or through a facet-step joint, using a modified embedded atom method. We found that the second process is not only thermodynamically more favorable than the first one but also much faster with a diminishing barrier. Our results provide a plausible explanation for the experimentally observed intriguing growth behavior of a Pb mesa. The underlying mechanisms can be generally applicable to other systems.
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68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
68.35.Md Surface thermodynamics, surface energies

Mechanisms of amorphous-phase-dependent grain growth in two-phase nanocomposite films: A Monte Carlo analysis

X. J. Hu, Z. J. Liu, and Y. G. Shen

Appl. Phys. Lett. 92, 021910 (2008); http://dx.doi.org/10.1063/1.2834850 (3 pages) | Cited 2 times

Online Publication Date: 18 January 2008

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Monte Carlo calculations of the grain growth in two-phase nanocomposite films with microstructures comprising of nanocrystalline (n) and amorphous (a) phases are presented based on a modified Q-state Potts model. The mechanisms of amorphous-phase-volume-fraction-(Va)-dependent grain growth are observed by analyzing the microstructure evolution. The results show that with Va values increasing to a critical value of 23%, the grain growth transforms from a n-/n-grain boundary (GB)-curvature-driven growth to the a-/n-GB-curvature-driven growth. The driving force for the transition is caused by the energy difference exerted on n/n or a/n boundaries. With further increasing Va, nanograins are completely surrounded by amorphous matrices and the diffusion-controlled growth mode driven by the difference between a-/n-interfacial energies and n-/n-boundary energies has been found. The homogeneity of the grain growth in the nanocomposite films with different Va values is also discussed.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.J- Morphology of films
61.46.-w Structure of nanoscale materials
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