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21 Jan 2008

Volume 92, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 92, 033101 (2008); http://dx.doi.org/10.1063/1.2830979 (3 pages)

Koichiro Zaitsu, Yosuke Kitamura, Keiji Ono, and Seigo Tarucha
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Low-loss materials for high Q-factor Bragg reflector resonators

Jean-Michel le Floch, Michael E. Tobar, Dominique Cros, and Jerzy Krupka

Appl. Phys. Lett. 92, 032901 (2008); http://dx.doi.org/10.1063/1.2828025 (3 pages) | Cited 2 times

Online Publication Date: 23 January 2008

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A Bragg resonator uses dielectric plates within a metallic cavity to confine the energy within a central free space region. The importance of the permittivity is shown with a better Q factor possible using higher permittivity materials of larger intrinsic dielectric losses. This is because the electric energy in the reflectors decreases proportionally to the square root of permittivity and the coupling to the metallic losses decrease linearly. In a sapphire resonator with a single reflector pair a Q factor of 2.34×105 is obtained, which may be improved on by up to a factor of 2 using higher permittivity materials.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Dj Gratings
41.20.-q Applied classical electromagnetism
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Sol-gel derived morphotropic phase boundary 0.37BiScO3–0.63PbTiO3 thin films

Jingzhong Xiao, Aiying Wu, and Paula M. Vilarinho

Appl. Phys. Lett. 92, 032902 (2008); http://dx.doi.org/10.1063/1.2834366 (3 pages) | Cited 6 times

Online Publication Date: 23 January 2008

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Dielectric/ferroelectric properties of morphotropic phase boundary 0.37BiScO3–0.63PbTiO3 thin films with a PbTiO3 seed layer deposited on platinized silicon substrates by sol-gel are examined. Room temperature dielectric constant of >1600 and dielectric loss of 0.02 are achieved (100 Hz). A well-defined hysteresis loop was observed with a Pr of ∼ 23 μC/cm2. In particular, the remarkable low Ec of ∼ 33 kV/cm of these films adds value to the potential application of BiScO3–PbTiO3 films in high temperature ferroelectric memories. The influence of PbTiO3 seed layer on the electric properties and the relation with the phase formation process, crystallinity, and microstructure of the films is discussed.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Terahertz evanescent field microscopy of dielectric materials using on-chip waveguides

J. Cunningham, M. Byrne, P. Upadhya, M. Lachab, E. H. Linfield, and A. G. Davies

Appl. Phys. Lett. 92, 032903 (2008); http://dx.doi.org/10.1063/1.2835705 (3 pages) | Cited 6 times

Online Publication Date: 23 January 2008

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We demonstrate an evanescent field modality for terahertz frequency time-domain measurements, based on the interaction between a sample and the evanescent field extending above lithographically defined terahertz waveguides. We quantify this interaction using freely positionable dielectric samples (GaAs) moved in close proximity to the waveguide (a terahertz microstrip line), finding a reduction in the microstrip-propagating pulse amplitude and an increase in its time delay when the dielectric is brought into the microstrip evanescent field. We also show that the frequency response of resonant passive circuit elements (stub band-stop filters), integrated into the microstrip line, can be used to determine the terahertz frequency properties of scanned samples, opening the way for a terahertz subwavelength imaging modality, the resolution of which is limited by lithographic constraints, rather than by free-space diffraction.
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82.45.Un Dielectric materials in electrochemistry
84.40.Az Waveguides, transmission lines, striplines
84.30.-r Electronic circuits

Diffuse second harmonic generation under the ferroelectric switching in Sr0.75Ba0.25Nb2O6 crystals

D. V. Isakov, M. S. Belsley, T. R. Volk, and L. I. Ivleva

Appl. Phys. Lett. 92, 032904 (2008); http://dx.doi.org/10.1063/1.2830993 (3 pages) | Cited 8 times

Online Publication Date: 24 January 2008

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In this work, we present observations of the polarization process in strontium barium niobate Sr0.75Ba0.25Nb2O6 (SBN-0.75) crystals by measuring the diffuse generation of the second harmonic converted by the random ferroelectric domains. The ability of a field-controlling intensity of the diffuse second harmonic generation is analyzed and discussed in terms of the specific switching scenario in SBN crystals.
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77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Strain and vacancy cluster behavior of vanadium and tungsten-doped Ba[Zr0.10Ti0.90]O3 ceramics

F. Moura, A. Z. Simões, L. S. Cavalcante, M. Zampieri, J. A. Varela, E. Longo, M. A. Zaghete, and M. L. Simões

Appl. Phys. Lett. 92, 032905 (2008); http://dx.doi.org/10.1063/1.2837196 (3 pages) | Cited 10 times

Online Publication Date: 25 January 2008

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Strain and vacancy clusters behavior of polycrystalline vanadium (V) and tungsten (W)-doped Ba[Zr0.10Ti0.90]O3, (BZT:2%V) and (BZT:2%W) ceramics obtained by the mixed oxide method was evaluated. Substitution of V and W reduces the distortion of octahedral clusters, decreasing the Raman modes. Electron paramagnetic resonance data indicate that the addition of dopants leads to defects and symmetry changes in the BZT lattice. Remnant polarization and coercive field are affected by V and W substitution due the electron-relaxation mode. The unipolar strain E curves as a function of electric field reach its maximum value for BZT:2%V and BZT:2%W ceramics.
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81.05.Mh Cermets, ceramic and refractory composites
61.72.jd Vacancies
87.80.Lg Magnetic and paramagnetic resonance

Switchable and tunable strontium titanate electrostrictive bulk acoustic wave resonator integrated with a Bragg mirror

Alexandre Volatier, Emmanuel Defaÿ, Marc Aïd, Amy N’hari, Pascal Ancey, and Bertrand Dubus

Appl. Phys. Lett. 92, 032906 (2008); http://dx.doi.org/10.1063/1.2837616 (3 pages) | Cited 7 times

Online Publication Date: 25 January 2008

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The realization and the radio-frequency characterization of a tunable strontium titanate (STO) electrostrictive solidly mounted acoustic resonator (SMR) bulk acoustic wave are reported. For a 430 nm thick strontium titanate layer, the resonance frequency at 2.2 GHz can be switched on with a bias voltage of 6 V and tuned ±0.85% with a bias voltage between 6 and 30 V. No hysteresis is observed. The SMR tunability is found to be affected by (i) the variation of coupling factor versus bias which is the dominant effect and (ii) the variation of SrTiO3 stiffness at constant electric displacement.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
42.79.Bh Lenses, prisms and mirrors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung-Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Jungwoo Oh, and Prashant Majhi

Appl. Phys. Lett. 92, 032907 (2008); http://dx.doi.org/10.1063/1.2838294 (3 pages) | Cited 20 times

Online Publication Date: 25 January 2008

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Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs HfO2-based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n-channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼ 0.5 V, the transconductance of ∼ 0.25 mS/mm, the subthreshold swing of ∼ 130 mV/decade, and the drain current of ∼ 162 μA/mm (normalized to the gate length of 1 μm) at Vd = 2 V and Vg = Vth+2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and HfO2 dielectric demonstrate much similar results.
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85.30.Tv Field effect devices
81.65.Rv Passivation
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