APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

28 Jan 2008

Volume 92, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 041901 (2008); http://dx.doi.org/10.1063/1.2831926 (3 pages)

M. A. Avila, K. Suekuni, K. Umeo, H. Fukuoka, S. Yamanaka, and T. Takabatake
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Three-dimensional crystalline Si film growth by the Ni silicide mediation

Joondong Kim, Chang-Soo Han, Yun Chang Park, and Wayne A. Anderson

Appl. Phys. Lett. 92, 043501 (2008); http://dx.doi.org/10.1063/1.2828202 (3 pages) | Cited 10 times

Online Publication Date: 29 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Three-dimensional crystalline Si films were grown by the Ni silicide mediation. The metal-induced growth method, which is a spontaneous reaction of metal and silicon, forms a silicide layer first then induces the crystalline Si growth. By controlling the reaction between Ni and Si, the silicide formation was modulated. The NiSi2 migration crystallizes a Si film behind and mediates crystalline Si above it. The mechanism of silicide-mediated three-dimensional Si crystallization and the thin Si film Schottky photodiode are presented.
Show PACS
85.30.Kk Junction diodes
85.60.Dw Photodiodes; phototransistors; photoresistors
68.55.ag Semiconductors
64.70.K- Solid-solid transitions

Comparison of air gap breakdown and substrate injection as mechanisms to induce dielectric charging in microelectromechanical switches

D. Molinero and L. Castañer

Appl. Phys. Lett. 92, 043502 (2008); http://dx.doi.org/10.1063/1.2837615 (3 pages) | Cited 5 times

Online Publication Date: 29 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Experiments show that air breakdown and substrate carrier conduction can be responsible of the dielectric charging of microelectromechanical devices after electrical stress. Test conducted under vacuum allows us to isolate the two mechanisms. It is also shown that the relative importance of the two mechanisms depends on the dielectric nature and technology.
Show PACS
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.32.Dd Connectors, relays, and switches
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects

Field evaporation behavior during irradiation with picosecond laser pulses

G. Sha, A. Cerezo, and G. D. W. Smith

Appl. Phys. Lett. 92, 043503 (2008); http://dx.doi.org/10.1063/1.2837626 (3 pages) | Cited 20 times

Online Publication Date: 29 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A field-ion specimen made of a low thermal diffusivity material, field evaporated using picosecond laser pulses incident from one side, is shown to develop different curvatures between the incident side and the “shadow” side of the specimen apex. Differences of approximately 2.6 and 1.5 V/nm in evaporation field were observed between the two regions of a type 304 stainless steel tip evaporated at 50 K with pulsed laser intensities of 0.04 and 0.02 nJ/μm2 ps, respectively. This indicates that diffraction of the laser beam cannot ensure uniform illumination and heating over the tip apex.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
61.82.Bg Metals and alloys
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 °C

L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, and N. Baron

Appl. Phys. Lett. 92, 043504 (2008); http://dx.doi.org/10.1063/1.2838301 (3 pages)

Online Publication Date: 29 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a comparative investigation of the magnetic response of long channel AlGaN/AlN/GaN heterostructures (Hall-field effect transistor devices) grown on three different semi-insulating templates on silicon and sapphire. From Hall effect measurements conducted up to 573 K (300 °C), we find that some of these specific devices can be used as magnetic sensors in a large temperature range ( ∼ 600 °C) with a magnetic sensitivity close to 60 V/A T and a small thermal drift. On the best sample, between liquid helium temperature and 300 °C, the average value of the thermal drift is only −7 ppm/°C.
Show PACS
85.30.Tv Field effect devices

Compositional investigation of liquid crystal alignment on tantalum oxide via ion beam irradiation

Jong-Yeon Kim, Byeong-Yun Oh, Byoung-Yong Kim, Young-Hwan Kim, Jin-Woo Han, Jeong-Min Han, and Dae-Shik Seo

Appl. Phys. Lett. 92, 043505 (2008); http://dx.doi.org/10.1063/1.2838312 (3 pages) | Cited 27 times

Online Publication Date: 29 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The homogeneously aligned liquid crystal display on Ta2O5 via ion beam (IB) irradiation was first embodied with controllability of pretilt angle depending on incident angle of the IB. As a result of x-ray photoelectron spectroscopic analysis, the intensity of Ta–O and O–Ta bondings as a function of incident angle behaved reversely with the pretilt angle and the lowest amplitude was observed at 45°. It revealed that the creation of pretilt angle was attributed to the irradiation of the IB by breaking Ta–O and O–Ta bonding so orientational order was generated by directional IB. Comparable electro-optical characteristics to rubbed polyimide were also achieved.
Show PACS
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.70.Df Liquid crystals
78.20.Jq Electro-optical effects
61.80.Jh Ion radiation effects
79.60.-i Photoemission and photoelectron spectra

High field sensitivity at room temperature in p-n junction based bilayered manganite devices

P. S. Vachhani, J. H. Markna, D. G. Kuberkar, R. J. Choudhary, and D. M. Phase

Appl. Phys. Lett. 92, 043506 (2008); http://dx.doi.org/10.1063/1.2838744 (3 pages) | Cited 6 times

Online Publication Date: 30 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The thickness dependent current-voltage (I-V) properties of the bilayered La0.6Pr0.2Sr0.2MnO3 (LPSMO)/Nb-SrTiO3 (SNTO) p-n junction devices having two different thicknesses, grown using pulsed laser deposition (PLD) technique, have been studied. The I-V curves of these bilayered junctions show good rectifying behavior and also exhibit large positive magnetoresistance (MR) at room temperature. The p-n junction having LPSMO thickness of 200 nm exhibits low saturation voltage (VC) and high positive MR as compared to junction with 100 nm p-type LPSMO layer. Distinct feature such as large positive MR with respect to temperature can be understood in terms of thickness dependent modifications in the film-substrate interface.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
85.40.Sz Deposition technology

Electrical characterization of CeO2/Si interface properties of metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectric

Chun-Heng Chen, Ingram Yin-Ku Chang, Joseph Ya-Min Lee, and Fu-Chien Chiu

Appl. Phys. Lett. 92, 043507 (2008); http://dx.doi.org/10.1063/1.2838746 (3 pages) | Cited 6 times

Online Publication Date: 30 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Metal-oxide-semiconductor field-effect transistors with CeO2 gate dielectrics were fabricated. The lowest interface trap density (Dit) of CeO2/Si interface in comparison with other high-κ gated diodes is 1.47×1012 cm−2 eV−1 due to the very low lattice mismatch of CeO2/Si. The interfacial properties were characterized by gated-diode measurements. The surface recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ) measured from the gated diodes are about 1.03×104 cm/s and 2.73×10−8 s, respectively. The effective capture cross section of surface state (σs) extracted using the gated diode technique and the subthreshold swing measurement is about 8.68×10−15 cm2.
Show PACS
85.30.Tv Field effect devices
84.32.Tt Capacitors
85.40.Sz Deposition technology

Mesopiezoresistive effects in double-barrier resonant tunneling structures

Liping Xu, Tingdun Wen, Xiaofeng Yang, Chenyang Xue, Jijun Xiong, Wendong Zhang, Mingzhong Wu, and Hans D. Hochheimer

Appl. Phys. Lett. 92, 043508 (2008); http://dx.doi.org/10.1063/1.2839316 (3 pages) | Cited 2 times

Online Publication Date: 31 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports a mesopiezoresistive effect in a double-barrier resonant tunneling (DBRT) structure. In a DBRT system, an external mechanical stress causes a tensile strain, and the strain, in turn, affects the resonant tunneling and thereby the resistance. Theoretical analysis was carried out on an AlAs/GaAs/AlAs DBRT structure under in-plane uniaxial tensile stresses. The results show that the tunneling current and resistance of a DBRT structure change significantly with external stress-induced tensile strains. The results also show that the resistance-strain response can be tuned effectively by the external voltage. The effect has potential applications in miniature electromechanical devices.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.23.-b Electronic transport in mesoscopic systems
72.20.Fr Low-field transport and mobility; piezoresistance

Sensitivity enhancement in diaphragms made by aluminum nitride thin films prepared on polyimide films

Morito Akiyama, Yukari Morofuji, Keiko Nishikubo, and Toshihiro Kamohara

Appl. Phys. Lett. 92, 043509 (2008); http://dx.doi.org/10.1063/1.2839319 (3 pages) | Cited 2 times

Online Publication Date: 31 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors have investigated a combination of high and low modulus materials in diaphragms for high sensitivity response. High and low modulus materials are aluminum nitride (AlN) thin films and polyimide films, respectively. AlN was sputtered deposited. The AlN films consist of columnar crystal grains and indicate c-axis orientation. The diaphragm indicates a high sensitivity response of 37 200 pC/N, although the piezoelectric coefficient d33 of the AlN film is 2.6 pC/N. The sensitivity response is fifty times as high as that of diaphragms consisted of AlN films and superalloy foils.
Show PACS
77.55.-g Dielectric thin films
77.65.Bn Piezoelectric and electrostrictive constants
68.55.J- Morphology of films

Control of resistance switching voltages in rectifying Pt/TiOx/Pt trilayer

Hisashi Shima, Fumiyoshi Takano, Hidenobu Muramatsu, Hiro Akinaga, Isao H. Inoue, and Hidenori Takagi

Appl. Phys. Lett. 92, 043510 (2008); http://dx.doi.org/10.1063/1.2838350 (3 pages) | Cited 19 times

Online Publication Date: 1 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The Pt/TiOx/Pt trilayer with electrically asymmetrical interface have been synthesized by means of the reactive sputtering technique followed by the oxygen annealing. The initial current-voltage characteristics in the Pt/TiOx/Pt trilayer cell have rectifying behavior originated from the Schottky junction formed between TiOx and Pt top electrode layer. The series connection of Pt/TiOx/Pt trilayer cells brings about the control of the reset and set voltages depending on the resistance of the connected Schottky diode, which is the demonstration of the resistance switching in the resistance random access memory with the one diode and one resistance structure using Schottky barrier diode.
Show PACS
73.63.-b Electronic transport in nanoscale materials and structures
73.21.Ac Multilayers
73.40.Ei Rectification
85.30.Kk Junction diodes

30 kV and 3 kA semi-insulating GaAs photoconductive semiconductor switch

Wei Shi, Liqiang Tian, Zheng Liu, Linqing Zhang, Zhenzhen Zhang, Liangji Zhou, Hongwei Liu, and Weiping Xie

Appl. Phys. Lett. 92, 043511 (2008); http://dx.doi.org/10.1063/1.2838743 (3 pages) | Cited 11 times

Online Publication Date: 1 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Current as high as 3.7 kA has been generated using a single photoconductive semiconductor switch (PCSS) excited by a laser pulse with the energy of ∼ 8 mJ and under a bias of 28 kV. The PCSS with electrode gap of 14 mm was fabricated from semi-insulating GaAs. Under different bias voltages the “on” resistances of the PCSS were measured. The longevity of the PCSS reached 350 shots at 20 kV and 400 A. The breakdown mechanism of the PCSS is analyzed based on the breakdown characteristics. It is shown that the breakdown of GaAs PCSS can be described by the electron-trapping breakdown theory.
Show PACS
85.60.-q Optoelectronic devices
85.30.-z Semiconductor devices

Improved circuit model for left-handed lines loaded with split ring resonators

F. Aznar, J. Bonache, and F. Martín

Appl. Phys. Lett. 92, 043512 (2008); http://dx.doi.org/10.1063/1.2839600 (3 pages) | Cited 13 times

Online Publication Date: 1 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, an improved lumped element equivalent circuit model for left-handed lines based on split ring resonators (SRRs) is presented and discussed. It is rigorously demonstrated that although the previously accepted circuit model of these metamaterial transmission lines (a π circuit) provides a good description of device behavior, its electrical parameters do not actually describe the physics of the structure. Conversely, the parameters of the improved equivalent circuit model are representative of the different elements of the structure, including the SRRs, the shunt inductive elements and the host line. It is also shown that the proposed model can be transformed to a π model which is formally identical to the previous reported model of SRR-based left-handed lines. With this transformation, the main relevant characteristics of these left-handed lines are perfectly interpreted.
Show PACS
84.40.Az Waveguides, transmission lines, striplines
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close