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28 Jan 2008

Volume 92, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 92, 041901 (2008); http://dx.doi.org/10.1063/1.2831926 (3 pages)

M. A. Avila, K. Suekuni, K. Umeo, H. Fukuoka, S. Yamanaka, and T. Takabatake
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Effects of LaNiO3 bottom electrode on structural and dielectric properties of CaCu3Ti4O12 films fabricated by sol-gel method

Y. W. Li, Z. G. Hu, J. L. Sun, X. J. Meng, and J. H. Chu

Appl. Phys. Lett. 92, 042901 (2008); http://dx.doi.org/10.1063/1.2837534 (3 pages) | Cited 6 times

Online Publication Date: 28 January 2008

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CaCu3Ti4O12 (CCTO) thin films are prepared by a sol-gel method on LaNiO3-coated silicon and Pt/TiO2/SiO2/Si substrate. Compared with the films on Pt, the CCTO on LaNiO3 exhibits a (400) orientation. Dielectric loss of CCTO on LaNiO3 is lower than 0.25 within 100 Hz–10 kHz, lower than the reported value of CCTO grown on Pt/TiO2/SiO2/Si by pulse laser deposition. Possible reason is that LaNiO3 acts as seed layer for the growth of CCTO. The crystallinity of CCTO is improved and the dielectric properties are enhanced. Complex impedance spectrum of CCTO on LaNiO3 is discussed according to grain boundary barrier layer capacitance model.
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77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.72.Mm Grain and twin boundaries

Low-losses, highly tunable Ba0.6Sr0.4TiO3/MgO composite

U.-Chan Chung, C. Elissalde, M. Maglione, C. Estournès, M. Paté, and J. P. Ganne

Appl. Phys. Lett. 92, 042902 (2008); http://dx.doi.org/10.1063/1.2837621 (3 pages) | Cited 48 times

Online Publication Date: 29 January 2008

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Spark plasma sintering (SPS) is an efficient tool to obtain highly densified ferroelectric-dielectric ceramic composites with clean interfaces and tunable properties. Dielectric MgO and ferroelectric Ba0.6Sr0.4TiO3 (BST) were combined in two-dimensional multilayer and three-dimensional random powders design. Their unmodified BST Curie temperature proves the suppression of interdiffusion while dielectric losses are below 0.5% and the tunability is 40% at room temperature. The composites and pure BST with similar densities (>95%) were obtained, owing reliable comparison of their dielectric properties. Such SPS ceramics can be used as experimental input for simulation and are potential candidates for high frequency applications.
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77.22.Gm Dielectric loss and relaxation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Mh Cermets, ceramic and refractory composites
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
77.80.-e Ferroelectricity and antiferroelectricity

A type of poly(vinylidene fluoride-trifluoroethylene) copolymer exhibiting ferroelectric relaxor behavior at high temperature ( ∼ 100 °C)

Hui-Min Bao, Cheng-Liang Jia, Chang-Chun Wang, Qun-Dong Shen, Chang-Zheng Yang, and Q. M. Zhang

Appl. Phys. Lett. 92, 042903 (2008); http://dx.doi.org/10.1063/1.2838309 (3 pages) | Cited 6 times

Online Publication Date: 29 January 2008

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We report a class of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymers synthesized via reductive dechlorination from P(VDF-CTFE) [termed as the reduced P(VDF-TrFE) copolymer], which exhibit ferroelectric relaxor behavior at high temperature ( ∼ 100 °C). It was found that the reduced P(VDF-TrFE) 66/34 mol % copolymer has very high content of head-to-head and tail-to-tail defects, which may act as random defects, leading to the observed ferroelectric relaxor at high temperature. Furthermore, the reduced copolymer also exhibits a high melting point ( ∼ 200 °C), which also makes it attractive for high-temperature dielectric applications.
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77.84.Jd Polymers; organic compounds
77.80.-e Ferroelectricity and antiferroelectricity

Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack

R. Mahapatra, Amit K. Chakraborty, A. B. Horsfall, N. G. Wright, G. Beamson, and Karl S. Coleman

Appl. Phys. Lett. 92, 042904 (2008); http://dx.doi.org/10.1063/1.2839314 (3 pages) | Cited 7 times

Online Publication Date: 30 January 2008

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The band alignment of HfO2/SiO2/SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the HfO2/SiC band offset while the larger one of 2.2 eV is due to the interfacial SiO2/SiC. The barrier height is extracted to be 1.5 eV from the Schottky emission characteristics and is higher than the reported value for HfO2 on SiC without interfacial SiO2. Thus, presence of an interfacial SiO2 layer increases band offsets to reduce the leakage current characteristics.
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73.20.At Surface states, band structure, electron density of states
79.60.-i Photoemission and photoelectron spectra
73.30.+y Surface double layers, Schottky barriers, and work functions
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

The chemical and electronic structures of YOxNy on Si(100)

X. J. Wang, L. D. Zhang, G. He, J. P. Zhang, M. Liu, and L. Q. Zhu

Appl. Phys. Lett. 92, 042905 (2008); http://dx.doi.org/10.1063/1.2839377 (3 pages) | Cited 5 times

Online Publication Date: 30 January 2008

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Effects of nitrogen incorporation on interfacial property, band gap, and band alignments of high-k Y2O3 gate dielectrics have been investigated. It was found that the incorporation of nitrogen into Y2O3 films can effectively suppress the growth of the interfacial layer between Y2O3 and Si substrate. The incorporation of nitrogen into Y2O3 films leads to the reduction of band gap and valence band offset, but not the conduction offset of Y2O3 films. High temperature annealing will help to increase the band gap and valence band offset of YOxNy film due to the release of the interstitial N atoms.
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77.55.-g Dielectric thin films
71.20.Ps Other inorganic compounds
81.40.Gh Other heat and thermomechanical treatments
61.72.jj Interstitials

Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy

P. F. Zhang, X. L. Liu, R. Q. Zhang, H. B. Fan, H. P. Song, H. Y. Wei, C. M. Jiao, S. Y. Yang, Q. S. Zhu, and Z. G. Wang

Appl. Phys. Lett. 92, 042906 (2008); http://dx.doi.org/10.1063/1.2839611 (3 pages) | Cited 13 times

Online Publication Date: 31 January 2008

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MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of MgO/InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59±0.23 eV. Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54±0.23 eV is found. The accurate determination of the valence and conduction band offsets is important for use of MgO/InN electronic devices.
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79.60.Jv Interfaces; heterostructures; nanostructures
71.20.-b Electron density of states and band structure of crystalline solids
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