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28 Jan 2008

Volume 92, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 041901 (2008); http://dx.doi.org/10.1063/1.2831926 (3 pages)

M. A. Avila, K. Suekuni, K. Umeo, H. Fukuoka, S. Yamanaka, and T. Takabatake
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Auger recombination in InN thin films

D.-J. Jang, G.-T. Lin, C.-L. Hsiao, L. W. Tu, and M.-E. Lee

Appl. Phys. Lett. 92, 042101 (2008); http://dx.doi.org/10.1063/1.2837537 (3 pages) | Cited 9 times

Online Publication Date: 28 January 2008

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Auger recombination is studied in InN thin films using an ultrafast time-resolved photoluminescence apparatus. The decay rates are analyzed with nonlinear dependence of the photoluminescence intensity on the carrier concentration. The fitted radiative recombination coefficients at a temperature of 35 K are consistent with the theoretical prediction. The Auger rates are small at low carrier concentrations but increase quadratically with the carrier concentration. The Auger activation energies of 4.3 and 9.0 meV obtained from the temperature-dependent Auger coefficient indicate that Auger recombination is weakly dependent on temperature and is a phonon-assisted process.
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73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.ag Semiconductors
78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
79.20.Fv Electron impact: Auger emission

Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

Akira Fujiwara, Katsuhiko Nishiguchi, and Yukinori Ono

Appl. Phys. Lett. 92, 042102 (2008); http://dx.doi.org/10.1063/1.2837544 (3 pages) | Cited 25 times

Online Publication Date: 28 January 2008

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Nanoampere single-electron pumping is presented at 20 K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3 GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture.
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85.30.Tv Field effect devices
85.35.Gv Single electron devices

Multilevel charging and discharging mechanisms of vertically stacked Ni1−xFex self-assembled nanoparticle arrays embedded in polyimide layers

T. W. Kim, J. H. Jung, C. S. Yoon, and Y.-H. Kim

Appl. Phys. Lett. 92, 042103 (2008); http://dx.doi.org/10.1063/1.2838300 (3 pages) | Cited 4 times

Online Publication Date: 28 January 2008

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Capacitance-voltage curves for the Al/polyimide (PI)/multilayered Ni1−xFex nanoparticle array/PI/p-Si (100) devices at 300 K showed that the flatband voltage shift of the metal-insulator-semiconductor capacitor was affected by the value of sweep voltage, indicative of the variations in the charged electron number in the multiple-stacked Ni1−xFex nanoparticle arrays in the floating gate. Current-voltage results showed that the electron charging and discharging in the Ni1−xFex nanoparticles were attributed to thermionic emission and Fowler-Nordheim tunneling, respectively. The multilevel charging and discharging mechanisms of vertically stacked Ni1−xFex self-assembled nanoparticle arrays embedded in PI layers are described on the basis of the experimental results.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
81.16.Dn Self-assembly
79.40.+z Thermionic emission
84.32.Tt Capacitors

Tunable pure spin currents in a triple-quantum-dot ring

Weijiang Gong, Yisong Zheng, and Tianquan Lü

Appl. Phys. Lett. 92, 042104 (2008); http://dx.doi.org/10.1063/1.2838310 (3 pages) | Cited 27 times

Online Publication Date: 28 January 2008

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Electronic transport through a triple-quantum-dot ring with three terminals is theoretically studied. By introducing local Rashba spin-orbit interaction on an individual quantum dot, we calculate the charge and spin currents in one lead. We find that a pure spin current without an accompanying charge current appears even at zero magnetic field case. The polarization direction of the spin current can be inverted by altering the bias voltage. In addition, by tuning the magnetic field strength, the charge and spin currents reach their respective peaks alternately.
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73.63.Kv Quantum dots
72.25.-b Spin polarized transport
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Studies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy

R. S. Wang, Q. L. Gu, C. C. Ling, and H. C. Ong

Appl. Phys. Lett. 92, 042105 (2008); http://dx.doi.org/10.1063/1.2838326 (3 pages) | Cited 5 times

Online Publication Date: 28 January 2008

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The evolution of near-interfacial defects from Al2O3/ZnO and MgO/ZnO upon thermal annealing has been studied by photoluminescence, deep level transient spectroscopy, and secondary ion mass spectroscopy. We find that all the results are strongly connected and that they point to the direction that Zn outdiffuses from ZnO to the oxide layer during annealing and creates deep level defects near the interfacial region. These defects reduce the band-edge emission and increase the deep level emission at 2.37 eV. Our study shows that the oxide/ZnO interface is relatively fragile and caution must be taken for making metal-oxide-ZnO based transistors and light emitting diodes.
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68.35.Ct Interface structure and roughness
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.55.Et II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Effect of oxygen on the electronic configuration of Gd2O3/Ge heterojunctions

M. Perego, A. Molle, and M. Fanciulli

Appl. Phys. Lett. 92, 042106 (2008); http://dx.doi.org/10.1063/1.2838344 (3 pages) | Cited 6 times

Online Publication Date: 29 January 2008

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The band structure of the Gd2O3/Ge heterojunction was investigated by x-ray photoelectron spectroscopy and was found to be very sensitive to variations of oxygen content in the oxide film. A 0.6 eV decrease of the valence band offset (VBO) has been observed after in situ O2 postdeposition annealing (PDA). The VBO value obtained after PDA is 2.8 eV in excellent agreement with data reported in the literature. The extra oxygen, supplied during PDA, is stably incorporated in the Gd2O3 matrix. Moreover, this extra oxygen limits moisture adsorption during air exposure and helps to stabilize the electronic configuration of the Gd2O3/Ge heterojunction.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Transition from direct tunneling to field emission in carbon nanotube intramolecular junctions

Po-Wen Chiu and Siegmar Roth

Appl. Phys. Lett. 92, 042107 (2008); http://dx.doi.org/10.1063/1.2838353 (3 pages) | Cited 6 times

Online Publication Date: 29 January 2008

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Transport measurements through metal-semiconductor carbon nanotube intramolecular junctions were carried out at high gate voltages in which regime the influence of Schottky barrier to charge transport is weak. The I-Vds curves exhibit an inflection point in the form of ln(I/Vds2)−1/Vds, showing a transition of transport mechanism from direct tunneling to field emission. The findings are interpreted in terms of quantum tunneling through a rectanglelike barrier at the junction, with a barrier width of ∼ 4 nm, in good agreement with that observed on pentagon-heptagon defects at nanotube junctions via scanning tunneling spectroscopy.
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73.40.Ns Metal-nonmetal contacts
73.40.Gk Tunneling
73.30.+y Surface double layers, Schottky barriers, and work functions
79.70.+q Field emission, ionization, evaporation, and desorption

Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder

D. Querlioz, Y. Apertet, A. Valentin, K. Huet, A. Bournel, S. Galdin-Retailleau, and P. Dollfus

Appl. Phys. Lett. 92, 042108 (2008); http://dx.doi.org/10.1063/1.2838354 (3 pages) | Cited 38 times

Online Publication Date: 29 January 2008

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This letter shows that a moderate degree of edge disorder can explain the fact that the experimentally measured bandgaps of graphene nanoribbons (GNRs) do not depend on orientation. We argue that GNRs actually behave similarly to Anderson insulators and the measured bandgaps should thus be interpreted as quasi-mobility edges. Calculations in the tight binding approach reveal that in the presence of edge disorder, quasi-mobility edge and electronic structures become independent of orientation and that quasi-mobility edge follows a quasi-universal law similar to experimental data, although with different parameters.
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73.22.-f Electronic structure of nanoscale materials and related systems
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

In situ arsenic-doped Si1−yCy selective epitaxial growth under atmospheric pressure

Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, and Kiyoshi Yasutake

Appl. Phys. Lett. 92, 042109 (2008); http://dx.doi.org/10.1063/1.2838724 (3 pages)

Online Publication Date: 30 January 2008

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We investigated the characteristics of in situ As-doped Si1−yCy selective epitaxial growth (SEG) under atmospheric pressure. We succeeded in obtaining an in situ doped Si1−yCy SEG film with a high As concentration of 2.6×1019 atoms/cm3. The film exhibited a high crystalline quality, high strain, constant As and C concentration profiles, and an abrupt change in the dopant profile at the interface. It was found that the increase in As concentration under atmospheric pressure increases the C concentration and the growth rate by competitive surface segregation between As and C atoms, leading to a highly strained Si1−yCy SEG film with a low resistivity.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
68.35.Dv Composition, segregation; defects and impurities
61.72.up Other materials
73.61.Le Other inorganic semiconductors

Electrical properties of GaN (Fe) buffers for AlGaN/GaN high electron mobility transistor structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, T. G. Yugova, A. V. Markov, A. M. Dabiran, A. M. Wowchak, B. Cui, J. Xie, A. V. Osinsky, P. P. Chow, and S. J. Pearton

Appl. Phys. Lett. 92, 042110 (2008); http://dx.doi.org/10.1063/1.2838734 (3 pages) | Cited 6 times

Online Publication Date: 30 January 2008

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The electrical properties of AlGaN/GaN high electron mobility transistor structures grown on composite GaN(Fe)/GaN buffers by molecular beam epitaxy were reported. The concentration of Fe in the GaN(Fe) layer ranged from 8×1016 to 3×1017 cm−3 as established by secondary ion mass spectrometry. The thickness of the undoped GaN layer of the buffer was varied from 2.2 to 4.1 μm. For thinner buffers and higher Fe concentration, the buffer was semi-insulating, with the Fermi level pinned near Ec-0.57 eV. For thicker buffers and lower Fe concentration, the top part of the buffer was conducting. Admittance spectra measured in conducting buffers also showed a prominent contribution from Ec-(055–0.6) eV electron traps. Despite the universal prominence of these traps in all our films, the behavior of their concentration with Fe doping and with increased distance from the GaN (Fe)/GaN boundary is not compatible with the assumption that they are due to substitutional Fe acceptors. Possible compensation mechanisms in the studied structures were discussed.
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85.30.Tv Field effect devices
85.40.Sz Deposition technology
85.40.Ry Impurity doping, diffusion and ion implantation technology

Electron concentration dependent magnetization and magnetic anisotropy in ZnO:Mn thin films

Z. Yang, J. L. Liu, M. Biasini, and W. P. Beyermann

Appl. Phys. Lett. 92, 042111 (2008); http://dx.doi.org/10.1063/1.2838753 (3 pages) | Cited 18 times

Online Publication Date: 30 January 2008

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Well-above room temperature and electron concentration dependent ferromagnetism was observed in n-type ZnO:Mn films, indicating long-range ferromagnetic order. Magnetic anisotropy was also observed in these ZnO:Mn films, which is another indication for intrinsic ferromagnetism. The electron-mediated ferromagnetism in n-type ZnO:Mn contradicts the existing theory that the magnetic exchange in ZnO:Mn materials is mediated by holes.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Gw Magnetic anisotropy
75.30.Et Exchange and superexchange interactions
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Thermoelectric properties of InxGa1−xN alloys

B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, and G. Pomrenke

Appl. Phys. Lett. 92, 042112 (2008); http://dx.doi.org/10.1063/1.2839309 (3 pages) | Cited 41 times

Online Publication Date: 30 January 2008

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Thermoelectric (TE) properties of InxGa1−xN alloys grown by metal organic chemical vapor deposition have been investigated. It was found that as indium concentration increases, the thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36Ga0.64N alloy, which is comparable to those of SiGe based alloys. The results indicate that InGaN alloys could be potentially important TE materials for many applications, especially for prolonged TE device operation at high temperatures, such as for recovery of waste heat from automobile, aircrafts, and power plants due to their superior physical properties, including the ability of operating at high temperature/high power conditions, high mechanical strength and stability, and radiation hardness.
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72.20.Pa Thermoelectric and thermomagnetic effects
81.05.Ea III-V semiconductors

Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type In0.53Ga0.47As

J.-F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. González, S. Perez, and D. Pardo

Appl. Phys. Lett. 92, 042113 (2008); http://dx.doi.org/10.1063/1.2837183 (3 pages) | Cited 9 times

Online Publication Date: 30 January 2008

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By numerical simulations we investigate the dispersion of the plasma frequency in a n-type In0.53Ga0.47As layer of thickness W and submicron length at T = 300 K. For W = 100 nm and carrier concentrations of 1016–1018 cm−3 the results are in good agreement with the standard three-dimensional (3D) expression of the plasma frequency. For W ⩽ 10 nm the results exhibit a plasma frequency that depends on L, thus implying that the oscillation mode is dispersive. The corresponding frequency values are in good agreement with the two-dimensional (2D) expression of the plasma frequency obtained for a ballistic regime within the in-plane approximation for the electric field. A region of cross over between the 2D and 3D behaviors of the plasma frequency is evidenced for W>10 nm.
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72.30.+q High-frequency effects; plasma effects
72.20.-i Conductivity phenomena in semiconductors and insulators

Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors

D. Basu, M. J. Gilbert, L. F. Register, S. K. Banerjee, and A. H. MacDonald

Appl. Phys. Lett. 92, 042114 (2008); http://dx.doi.org/10.1063/1.2839330 (3 pages) | Cited 36 times

Online Publication Date: 30 January 2008

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Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal-oxide-semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces ON-state currents and increases OFF-state currents, and introduces wide variability across devices. These effects decrease as ribbon widths increase and as edges become smoother. However, the band gap decreases with increasing width, thereby increasing the band-to-band tunneling mediated subthreshold leakage current even with perfect nanoribbons. These results suggest that without atomically precise edge control during fabrication, MOSFET performance gains through use of graphene will be difficult to achieve in complementary MOS applications.
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85.30.Tv Field effect devices

Transport properties of branched graphene nanoribbons

Antonis N. Andriotis and Madhu Menon

Appl. Phys. Lett. 92, 042115 (2008); http://dx.doi.org/10.1063/1.2839373 (3 pages) | Cited 9 times

Online Publication Date: 30 January 2008

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The electronic transport properties of three-terminal graphene nanoribbon T-junctions are investigated using a quantum tight binding molecular dynamics scheme. The transport properties are found to depend very sensitively on the geometric features of the branches of the junctions. This dependence is even more pronounced than the corresponding dependence in the case of T-shaped single wall carbon nanotubes. This is attributed to the strong dependence of the conductivity of the nanoribbons on their chirality, width, and length. An additional factor that influences the conductivity of the T-junction nanoribbons is associated with the junction itself, i.e., the way the branches are interconnected.
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71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
73.63.Bd Nanocrystalline materials
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
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Measurement of ultrafast carrier dynamics in epitaxial graphene

Jahan M. Dawlaty, Shriram Shivaraman, Mvs Chandrashekhar, Farhan Rana, and Michael G. Spencer

Appl. Phys. Lett. 92, 042116 (2008); http://dx.doi.org/10.1063/1.2837539 (3 pages) | Cited 116 times

Online Publication Date: 30 January 2008

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Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70–120 fs range is followed by a slower relaxation process in the 0.4–1.7 ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene.
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78.66.Tr Fullerenes and related materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.30.Na Fullerenes and related materials
63.22.Dc Free films
78.47.D- Time resolved spectroscopy (>1 psec)

Evaluation of minority-carrier diffusion length in n-type β-FeSi2 single crystals by electron-beam-induced current

Teruhisa Ootsuka, Takashi Suemasu, Jun Chen, and Takashi Sekiguchi

Appl. Phys. Lett. 92, 042117 (2008); http://dx.doi.org/10.1063/1.2835904 (3 pages) | Cited 11 times

Online Publication Date: 31 January 2008

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We have evaluated the diffusion length of minority carriers (holes) in single-crystalline n-type β-FeSi2 bulk grown by chemical vapor transport by means of electron-beam-induced current (EBIC) technique in the edge-scan configuration. The EBIC line-scan data showed a clear exponential dependence of distance from the Al electrode. The diffusion length was estimated to be 20 μm at room temperature, and increased upon high-temperature annealing, reaching approximately 30 μm after annealing at 800 °C for 8 h. This result explained the improvement of photoresponsivity in the Al/n-β-FeSi2 Schottky diodes by high-temperature annealing.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Ns Metal-nonmetal contacts
61.72.Cc Kinetics of defect formation and annealing
85.30.Kk Junction diodes

Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth

E. B. Yakimov, P. S. Vergeles, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, In-Hwan Lee, Cheul Ro Lee, and S. J. Pearton

Appl. Phys. Lett. 92, 042118 (2008); http://dx.doi.org/10.1063/1.2840190 (3 pages) | Cited 13 times

Online Publication Date: 31 January 2008

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Local donor concentrations were measured in the regions of lateral overgrowth and in the normal vertical growth regions of n-GaN films prepared by epitaxial lateral overgrowth (ELOG). The films were doped with Si to various concentrations. The local donor densities were determined from measurements of the collection efficiency dependence of the electron beam induced current (EBIC) on the energy of the probing electron beam. This dependence was compared with the results of theoretical modeling using the local donor density and diffusion length of charge carriers as fitting parameters. The results show that the donor concentration in the ELOG regions is systematically more than two times lower than the concentration in the vertical growth regions in the gaps of the SiO2 mask used for selective growth. The observed difference is ascribed to the anisotropy of the Si incorporation efficiency. Comparison of these EBIC results with the results of capacitance-voltage profiling obtained on large area Schottky diodes shows that the latter yield the donor concentration close to the concentration in the laterally overgrown regions.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.ag Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.J- Morphology of films

Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities

F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I. R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, and M. Gurioli

Appl. Phys. Lett. 92, 042119 (2008); http://dx.doi.org/10.1063/1.2839380 (3 pages) | Cited 7 times

Online Publication Date: 31 January 2008

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We discuss the presence of a polariton bottleneck in bulk GaN microcavities. Angle resolved photoluminescence measurements were performed using low excitation power densities for several negative detunings between the exciton and photon modes. At low temperatures, we observe an enhancement in the emission intensity at angles corresponding to the anticrossing of the lower and upper polariton modes, a clear demonstration of the polariton relaxation bottleneck. This feature becomes less prominent with increasing temperature, eventually disappearing at room temperature. We conclude that polariton-acoustic phonon scattering is the dominant polariton relaxation mechanism in bulk GaN microcavities, as supported by theoretical simulations.
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78.55.Cr III-V semiconductors
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Energy-band alignments of HfO2 on p-GaAs substrates

Goutam Kumar Dalapati, Hoon-Jung Oh, Sung Joo Lee, Aaditya Sridhara, Andrew See Weng Wong, and Dongzhi Chi

Appl. Phys. Lett. 92, 042120 (2008); http://dx.doi.org/10.1063/1.2839406 (3 pages) | Cited 8 times

Online Publication Date: 31 January 2008

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Interfacial reaction and the energy-band alignments of HfO2 films on p-GaAs substrate were investigated by using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been demonstrated that the alloying of HfO2 with Al2O3 (HfAlO) can significantly reduce native oxides formation and increases the valence-band offsets (VBOs) at HfO2/p-GaAs interface. In addition, the effects of Si interfacial passivation layer on band alignments have also been studied. VBO at HfO2/p-GaAs, HfAlO/p-GaAs, and HfO2/Si/p-GaAs interfaces were 2.85, 2.98, and 3.07 eV, respectively.
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77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.60.Jv Interfaces; heterostructures; nanostructures
81.65.Rv Passivation
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