Blue-light emission from GaN/Al0.5Ga0.5N quantum dots

Huault, T.; Brault, J.; Natali, F.; Damilano, B.; Lefebvre, D.; Nguyen, L.; Leroux, M.; Massies, J.

doi:doi:10.1063/1.2841825

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Catalytic effect of mixed Zr–Fe additives on the hydrogen desorption kinetics of MgH₂

Mg films containing Fe–Zr mixed additives were prepared by rf sputtering and their hydrogen sorption kinetic was studied by Sievert technique. We observed that mixed Fe–Zr additives improve the H2 desorption kinetics better than singly Fe or Zr. X-ray diffraction analysis evidences that mixed additives optimize the Fe distribution that forms smaller clusters than in Mg sample with single Fe catalyst. The presence of mixed additives, with Fe having larger diffusivity than Zr, contributes to main...

Anomalous two-photon generation of excitons in CuCl pellets

We report on an anomalous excitation of excitonic matter in pressed CuCl pellets. In these random materials, we find that excitons are initially created for an excitation energy in the range of 1892–2843 meV, which is far below the bandgap of this semiconductor. The excitation-power dependence from the population dynamics of excitonic matter strongly indicates an unusual two-photon generation of ground-state excitons. Considering this off-resonance effect, excitons are probably generated from a...

The growth by molecular beam epitaxy and the optical properties of GaN/Al_0.5Ga_0.5N quantum dots on (0001) sapphire substrates are reported. The quantum dots are spontaneously formed via a two dimensional to three dimensional transition upon growth interruption. Photoluminescence over the blue range (435–470 nm) is obtained at room temperature by varying the GaN nominal thickness. A weak temperature dependence of the integrated photoluminescence intensity between low temperature and room temperature is observed indicating strong carrier localization in the quantum dots.

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, localised states, molecular beam epitaxial growth, photoluminescence, semiconductor growth, semiconductor quantum dots

PACS

68.65.Hb

Quantum dots (patterned in quantum wells)
78.55.Cr

III-V semiconductors
78.66.Fd

III-V semiconductors
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2841825

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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