APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Feb 2008

Volume 92, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 053301 (2008); http://dx.doi.org/10.1063/1.2838457 (3 pages)

Michael S. Arnold, Gregory J. McGraw, Stephen R. Forrest, and Richard R. Lunt
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Influence of gas pressure in the voids during charging on the piezoelectricity of ferroelectrets

Xunlin Qiu, Axel Mellinger, and Reimund Gerhard

Appl. Phys. Lett. 92, 052901 (2008); http://dx.doi.org/10.1063/1.2841037 (3 pages) | Cited 4 times

Online Publication Date: 5 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Cellular polypropylene ferroelectrets were subjected to vacuum and high air pressures. The capacitance of the samples was measured as a way to monitor their thickness. It was found that both in vacuum and in high-pressure air, the thickness of the samples recovers to its original value after a sufficient storage time (typically, several hours), indicating that the internal and external pressures equalize as a result of gas diffusion. Optimal piezoelectricity is achieved by charging at a pressure of 170 kPa, which is explained by means of the void-height distribution function in combination with Townsend’s model of the Paschen breakdown.
Show PACS
62.50.-p High-pressure effects in solids and liquids
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
77.84.Jd Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
61.41.+e Polymers, elastomers, and plastics

Relaxor in KF-doped BaTi2O5 ceramics by spark plasma sintering

Jun Xu and Yukikuni Akishige

Appl. Phys. Lett. 92, 052902 (2008); http://dx.doi.org/10.1063/1.2841712 (3 pages) | Cited 11 times

Online Publication Date: 6 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Dense BaTi2O5 ceramics with KF doping up to 5 at. % were synthesized by spark plasma sintering (SPS). The SPS method enabled us to overcome the densifying difficulty in conventional sintering which is caused by the limit of the decomposing temperature of this metastable phase. We observed drastic KF-doping effect on the ferroelectric (FE) properties of BaTi2O5. Although there is only very small change in lattice parameters upon KF doping, the peak temperature in dielectric constant strongly decreases in an exponential way. The diffuseness of phase transition increases and FE relaxor state sets in for KF content as low as 1 at. %. Possible structural reasons for the effect and the implication for the nature of FE phase transition in BaTi2O5 are discussed.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
52.77.-j Plasma applications
61.72.up Other materials

Interface modification and bonding of lithium tantalate crystals

I. Torchinsky and G. Rosenman

Appl. Phys. Lett. 92, 052903 (2008); http://dx.doi.org/10.1063/1.2841706 (3 pages) | Cited 1 time

Online Publication Date: 7 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Intermolecular interactions defined by surface free energy of solids are a critical factor affecting adhesion and bonding of the materials. An experimental technique for surface free energy and related properties (wettability and adhesion) modification has been developed and applied to lithium tantalate ferroelectric crystals. The method is based on combination of ultraviolet illumination and low-energy electron irradiation. These two techniques provide controllable wettability tailoring in a wide range of contact angles of 6°–87°. Fabrication of various wetting configurations of contacted and bonded lithium tantalate (LT) pair plates, such as hydrophilic/hydrophilic, hydrophilic/hydrophobic, and hydrophobic/hydrophobic, allows us to demonstrate direct bonding for modified hydrophilic polar LT faces.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
61.50.Lt Crystal binding; cohesive energy
65.40.gp Surface energy
68.35.Np Adhesion
61.80.Fe Electron and positron radiation effects

Giant magnetoelectric effect in Ni–lead zirconium titanate cylindrical structure

D. A. Pan, Y. Bai, Alex A. Volinsky, W. Y. Chu, and L. J. Qiao

Appl. Phys. Lett. 92, 052904 (2008); http://dx.doi.org/10.1063/1.2841709 (3 pages) | Cited 23 times

Online Publication Date: 7 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The magnetoelectric (ME) coupling of a bilayered Ni–lead zirconate titanate composite structure synthesized by electrodeposition was studied in this paper. The ME voltage coefficient was measured in the range of 1–120 kHz as the bias field is parallel to the axial. The results indicate that an electromechanical resonance appears at 59.9 kHz. The bilayered cylindrical ME composite exhibits a special field dependence of ME coefficient. Either for the resonant state or the nonresonant state, above 1 kOe, the ME voltage coefficient increased linearly with the strengthening of bias field, up to 30 V/cm Oe at 8 kOe.
Show PACS
75.80.+q Magnetomechanical effects, magnetostriction
81.15.Pq Electrodeposition, electroplating
77.65.-j Piezoelectricity and electromechanical effects
68.55.-a Thin film structure and morphology

Low-frequency negative capacitance in La0.8Sr0.2MnO3/Nb-doped SrTiO3 heterojunction

C. C. Wang, G. Z. Liu, M. He, and H. B. Lu

Appl. Phys. Lett. 92, 052905 (2008); http://dx.doi.org/10.1063/1.2840195 (3 pages) | Cited 11 times

Online Publication Date: 7 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Low-frequency (100 Hz ⩽ f ⩽ 1 MHz) dielectric properties of La0.8Sr0.2MnO3/Nb-doped SrTiO3 heterojunctions were investigated in detail at room temperature. Negative capacitance was observed at low frequencies under positive dc biases. This phenomenon was found to result from the combinational contributions from the Maxwell–Wagner interfacial relaxation and the dipolar relaxation related to detrapped carriers which give rise to inductive effect under an applied electric field.
Show PACS
77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

High-resolution dielectric spectroscopy and electric-field dependence of carbon allotropes including multiwall and single-wall nanotubes

Rajratan Basu and Germano S. Iannacchione

Appl. Phys. Lett. 92, 052906 (2008); http://dx.doi.org/10.1063/1.2841826 (3 pages) | Cited 10 times

Online Publication Date: 7 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High-resolution isothermal dielectric spectroscopy is reported as a function of frequency up to 105 Hz and electric field Erot on four carbon allotropes; amorphous glass, diamond, multiwall nanotubes (MWNTs), and single-wall nanotubes (SWNTs). The diamond spectra are featureless while the glass, MWNT, and SWNT samples exhibit two modes. A common low-frequency mode, likely due to surface space charges, is observed at ∼ 16 Hz that decreases in dispersion strength and increases in frequency linearly with increasing Erot. A higher-frequency mode, different for each sample, is also observed having a dispersion strength and frequency independent of Erot.
Show PACS
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide

Qing-Qing Sun, Lin Dong, Yu Shi, Han Liu, Shi-Jin Ding, and David Wei Zhang

Appl. Phys. Lett. 92, 052907 (2008); http://dx.doi.org/10.1063/1.2841658 (3 pages)

Online Publication Date: 7 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Boron penetration is a big problem existing in the integration of modern fully silicided metal gate with high k dielectrics. We performed first-principles calculation to study the boron penetration induced degradation of hafnium based gate dielectrics. According to our calculation, The positive charged nature of B defects at normal working condition of p-type metal oxide semiconductor field effect transistor and its large diffusion coefficient in HfO2 result in the negative Vth (VFB) shifting or the canceling out of interface dipole for work function modulation. Moreover, remote Coulomb scattering, band offset reduction, and gap states induced by boron degrade the channel mobility and gate leakage, respectively.
Show PACS
85.30.Tv Field effect devices

Temperature evolution of lattice strains in relaxor PbSc1/2Nb1/2O3 thin films

Pierre-Eymeric Janolin, Jean-Michel Kiat, Charlotte Malibert, Shutaro Asanuma, and Yoshiaki Uesu

Appl. Phys. Lett. 92, 052908 (2008); http://dx.doi.org/10.1063/1.2838735 (3 pages) | Cited 1 time

Online Publication Date: 8 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Temperature evolution of the lattice parameters of relaxor PbSc1/2Nb1/2O3 (PSN) thin films have been measured and compared to the evolution of bulk PSN. In PSN films, a room temperature tetragonal polar phase transforms at higher temperature into a nonpolar tetragonal phase. Critical and Burns temperatures, associated, respectively, to the onset of the ferroelectric phase and to the nucleation of polar nanoregions have been assigned from strong anomalies in the temperature evolution of the film. These complex behaviors are explained by a quantitative study of the strains lying in the film.
Show PACS
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
64.60.Q- Nucleation
68.55.at Other materials

Constrained modeling of domain patterns in rhombohedral ferroelectrics

Y. C. Shu, J. H. Yen, H. Z. Chen, J. Y. Li, and L. J. Li

Appl. Phys. Lett. 92, 052909 (2008); http://dx.doi.org/10.1063/1.2842385 (3 pages) | Cited 25 times

Online Publication Date: 8 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A nonconventional phase-field model is developed to predict ferroelectric domain structures. It employs a set of field variables motivated by multirank laminates to represent energy-minimizing domain configurations, giving rise to an explicit expression of the energy-well structure. The framework is applied to domain simulation in the rhombohedral phase assuming that polarization is close to the ground states. An electromechanical self-accommodation pattern consisting of eight rhombohedral variants and an engineered domain configuration are predicted and found in good agreement with those observed in experiment.
Show PACS
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects

Dielectric relaxation in polyimide nanofoamed films with low dielectric constant

Yihe Zhang, Shanming Ke, Haitao Huang, Lihang Zhao, Li Yu, and H. L. W. Chan

Appl. Phys. Lett. 92, 052910 (2008); http://dx.doi.org/10.1063/1.2840715 (3 pages) | Cited 4 times

Online Publication Date: 8 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Polyimide nanofoamed films have been prepared from the polyimide precursors (PMDA-ODA) and poly(ethylene oxide) (PEO) in N,N-dimethylacetamide. The dielectric properties of the films were studied over the temperature range of −150–150 °C and a frequency range of 1 Hz–10 MHz. The frequency dependence of the dielectric constant for nanofoamed films with different amounts of PEO was studied. An relaxation process at below the glass transition temperature of the polyimide nanofoamed films was found. The peak value of the dielectric loss increased with increasing amount of PEO.
Show PACS
77.55.-g Dielectric thin films
77.84.Jd Polymers; organic compounds
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
64.70.pj Polymers

Ferroelectric properties of Bi4−xCexTi3O12 (0<x<4) thin film array fabricated from Bi2O3/CeO2/TiO2 multilayers using multitarget sputtering

Ki Woong Kim, Tai Suk Kim, Min Ku Jeon, Kwang Seok Oh, Chang Hwa Jung, and Seong Ihl Woo

Appl. Phys. Lett. 92, 052911 (2008); http://dx.doi.org/10.1063/1.2841039 (3 pages) | Cited 5 times

Online Publication Date: 8 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We fabricated a ferroelectric Bi4−xCexTi3O12 thin film library by solid-state mixing of Bi2O3/CeO2/TiO2 multilayers using a multitarget rf magnetron sputtering equipped with an automated shutter. Polarization-electrical field and the structure are mapped as a function of Ce content (x) from 0 to 4. The remnant polarization decreases as Ce content increases, and at x ≥ 0.8, Bi4−xCexTi3O12 samples exhibit a paraelectric property due to the formation of impurity phases such as Bi2Ti2O7 and CeO2. Among the thin film samples of the library, Bi3.85Ce0.15Ti3O12 exhibited the largest remnant polarization of 13.0 μC/cm2.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
73.21.Ac Multilayers
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close