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4 Feb 2008

Volume 92, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 92, 053301 (2008); http://dx.doi.org/10.1063/1.2838457 (3 pages)

Michael S. Arnold, Gregory J. McGraw, Stephen R. Forrest, and Richard R. Lunt
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Ohmic conduction of sub-10 nm P-doped silicon nanowires at cryogenic temperatures

F. J. Rueß, A. P. Micolich, W. Pok, K. E. J. Goh, A. R. Hamilton, and M. Y. Simmons

Appl. Phys. Lett. 92, 052101 (2008); http://dx.doi.org/10.1063/1.2840182 (3 pages) | Cited 3 times

Online Publication Date: 4 February 2008

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We investigate the conduction properties of an embedded, highly phosphorus-doped nanowire with a width of 8 nm lithographically defined by scanning tunneling microscope based patterning of a hydrogen-terminated Si(100):H surface. Four terminal I-V measurements show that ohmic conduction is maintained within the investigated temperature range from 35 K down to 1.3 K. A prominent resistance increase is observed below ∼ 4 K which is attributed to a crossover into the strong localization regime. The low temperature conductance follows a one-dimensional variable range hopping model accompanied by positive magnetoresistance which dominates over weak localization effects at low temperature.
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73.63.Nm Quantum wires
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Ee Mobility edges; hopping transport
73.21.Hb Quantum wires

Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

K. H. Cho, K. H. Yeo, Y. Y. Yeoh, S. D. Suk, M. Li, J. M. Lee, M.-S. Kim, D.-W. Kim, D. Park, B. H. Hong, Y. C. Jung, and S. W. Hwang

Appl. Phys. Lett. 92, 052102 (2008); http://dx.doi.org/10.1063/1.2840187 (3 pages) | Cited 19 times

Online Publication Date: 4 February 2008

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We have investigated the electrical characteristics of cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field effect-transistors with 4 nm radius and the gate length ranging from 22 to 408 nm. We observed strong transconductance overshoot in the linear source-drain bias regime in the devices with channel length shorter than 46 nm. The mean free path estimated from the slope of the zero-field one dimensional ballistic resistance measured as a function of device length was almost the same as this length.
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85.30.Tv Field effect devices

Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories

Imran B. Akca, Aykutlu Dâna, Atilla Aydinli, and Rasit Turan

Appl. Phys. Lett. 92, 052103 (2008); http://dx.doi.org/10.1063/1.2835455 (3 pages) | Cited 7 times

Online Publication Date: 4 February 2008

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Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
85.40.Sz Deposition technology
85.35.-p Nanoelectronic devices

Negative differential conductance in two-dimensional electron grids

W. Pan, S. K. Lyo, J. L. Reno, J. A. Simmons, D. Li, and S. R. J. Brueck

Appl. Phys. Lett. 92, 052104 (2008); http://dx.doi.org/10.1063/1.2840996 (3 pages) | Cited 7 times

Online Publication Date: 5 February 2008

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Negative differential conductance has been observed in grid-shaped surface superlattices, realized in a high mobility two-dimensional electron system. The current-voltage characteristics vary with the modulation strength, indicating that the two-dimensional electronic transport properties can be manipulated in a controllable way. Theoretical modeling yields reasonable agreement with the experimental data.
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68.65.Cd Superlattices

Photoinduced insulator-to-metal transition in ZnO/Mg0.15Zn0.85O heterostructures

A. Tsukazaki, A. Ohtomo, M. Nakano, and M. Kawasaki

Appl. Phys. Lett. 92, 052105 (2008); http://dx.doi.org/10.1063/1.2841044 (3 pages) | Cited 5 times

Online Publication Date: 6 February 2008

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We report on the persistent photoconductivity accompanied with a steep insulator-to-metal transition at low temperatures in ZnO/Mg0.15Zn0.85O heterostructures. The photoexcited electrons were confined in the ZnO adjacent to the Mg0.15Zn0.85O to form a two-dimensional electron gas (2DEG). The electron density was controlled either by the power or number of ultraviolet laser pulses (266 nm wavelength) irradiated to the sample. The 2DEG exhibits Shubnikov-de Haas oscillation in magnetoresistance, whose oscillation periods coincide with the electron density evaluated by Hall effect measurements.
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71.30.+h Metal-insulator transitions and other electronic transitions
72.40.+w Photoconduction and photovoltaic effects
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.82.Fk Semiconductors

Stability of p-type conductivity in nitrogen-doped ZnO thin film

Z. Y. Xiao, Y. C. Liu, R. Mu, D. X. Zhao, and J. Y. Zhang

Appl. Phys. Lett. 92, 052106 (2008); http://dx.doi.org/10.1063/1.2838330 (3 pages) | Cited 26 times

Online Publication Date: 6 February 2008

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The behavior of p-type conductivity in nitrogen-doped ZnO prepared by thermal oxidation of zinc oxynitride thin film was investigated. The sample exhibited a stable p-type characteristic in the darkness over a 1 yr period after deposition. However, when the p-type sample was irradiated by 2.72 eV photons, it underwent a classic-mixed conductivity transition from p type to n type. An anomalously thermal equilibrium process was observed. It took 24 h for the persisted n type photoconductivity to fade away in the dark and transit back to original p type. A local potential fluctuation model was used to explain the transient electrical behavior.
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73.61.Ga II-VI semiconductors
72.60.+g Mixed conductivity and conductivity transitions
73.50.Pz Photoconduction and photovoltaic effects

Effect of rubbed polyimide layer on the field-effect mobility in pentacene thin-film transistors

Seok-Ju Kang, Yong-Young Noh, Kang-Jun Baeg, Jieun Ghim, Jeong-Ho Park, Dong-Yu Kim, Jong Soo Kim, Jong Hwan Park, and Kilwon Cho

Appl. Phys. Lett. 92, 052107 (2008); http://dx.doi.org/10.1063/1.2830694 (3 pages) | Cited 14 times

Online Publication Date: 7 February 2008

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We investigated preferentially oriented pentacene grains on rubbed polyimide (PI) layers under various conditions, such as substrate temperature and cumulative rubbing number. In case of pentacene thin films deposited on rubbed PI at room temperature (RT), compared to unrubbed, the field-effect mobilities were improved by two- to threefold in contrast to the cases of elevated temperature. From the results of crystalline in-plane orientation and thin-film versus bulk-phase ratio, we proposed that pentacence crystalline orientation on a rubbed PI layer could be more favorable at RT, whereas the heating energy might weaken the interaction energy between pentacene molecules and aligned PI layer.
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85.30.Tv Field effect devices

The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe/ZnTe quantum dots

H. S. Lee, H. L. Park, and T. W. Kim

Appl. Phys. Lett. 92, 052108 (2008); http://dx.doi.org/10.1063/1.2841711 (3 pages) | Cited 8 times

Online Publication Date: 8 February 2008

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Photoluminescence spectra showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E1-HH1) in the CdTe/ZnTe quantum dots (QDs) was shifted to a higher energy with increasing thickness of the ZnTe cap layer. The intensity of the excitonic peak related to the E1-HH1 transition for the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer. The activation energy of the electrons confined in the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer.
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78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
73.21.La Quantum dots

Thermally stable amorphous (AlMoNbSiTaTiVZr)50N50 nitride film as diffusion barrier in copper metallization

Ming-Hung Tsai, Chun-Wen Wang, Chia-Han Lai, Jien-Wei Yeh, and Jon-Yiew Gan

Appl. Phys. Lett. 92, 052109 (2008); http://dx.doi.org/10.1063/1.2841810 (3 pages) | Cited 20 times

Online Publication Date: 8 February 2008

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Results on copper metallization diffusion barriers using high-entropy alloy (HEA) nitride are reported. The HEA nitride (AlMoNbSiTaTiVZr)50N50 is amorphous in the as-deposited state and remains its noncrystallinity up to a high temperature of 850 °C. To evaluate its diffusion barrier characteristics, Cu/(AlMoNbSiTaTiVZr)50N50/Si test structures were prepared and annealed under 750–900 °C for 30 min. The results show that the current nitride prevents the reaction between Cu and Si before its failure at 900 °C. The outstanding barrier performance and high thermal stability of amorphous structure are suggested to originate from multiprincipal-element effects.
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85.40.Ls Metallization, contacts, interconnects; device isolation

Suppression of the critical current of a balanced superconducting quantum interference device

Antti Kemppinen, Antti J. Manninen, Mikko Möttönen, Juha J. Vartiainen, Joonas T. Peltonen, and Jukka P. Pekola

Appl. Phys. Lett. 92, 052110 (2008); http://dx.doi.org/10.1063/1.2842413 (3 pages) | Cited 4 times

Online Publication Date: 8 February 2008

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We present an experimental study of the magnetic flux dependence of the critical current of a balanced superconducting quantum interference device (SQUID) with three Josephson junctions in parallel. Unlike for ordinary direct current (dc) SQUIDs, the suppression of the critical current does not depend on the exact parameters of the Josephson junctions. The suppression is essentially limited only by the inductances of the SQUID loops. We demonstrate a critical current suppression ratio of higher than 300 in a balanced SQUID with a maximum critical current 30 nA.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
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