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11 Feb 2008

Volume 92, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 063101 (2008); http://dx.doi.org/10.1063/1.2839572 (3 pages)

M. N. Ou, T. J. Yang, S. R. Harutyunyan, Y. Y. Chen, C. D. Chen, and S. J. Lai
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Broadband polarizing films by photopolymerization-induced phase separation and in situ Swelling

B. Fan, S. Vartak, J. N. Eakin, and S. M. Faris

Appl. Phys. Lett. 92, 061101 (2008); http://dx.doi.org/10.1063/1.2838299 (3 pages) | Cited 10 times

Online Publication Date: 11 February 2008

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This letter describes the spectral broadening of cholesteric liquid crystal films prepared from a blend comprising a cross-linkable liquid crystal polymer and a noncross-linkable low-molecular-weight liquid crystal. The bandwidth of the broadened reflection band can be increased by several times upon photopolymerization. The spectral broadening arises from the formation of gradient pitch across the film thickness. It is shown that both phase separation and in situ swelling are important mechanisms for the resulting film structure.
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42.70.Df Liquid crystals
64.70.mj Experimental studies of liquid crystal transitions
68.15.+e Liquid thin films
82.35.-x Polymers: properties; reactions; polymerization
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.16.Dn Self-assembly

Alignment layer effects on thin liquid crystal cells

Meizi Jiao, Zhibing Ge, Qiong Song, and Shin-Tson Wu

Appl. Phys. Lett. 92, 061102 (2008); http://dx.doi.org/10.1063/1.2841642 (3 pages) | Cited 37 times

Online Publication Date: 11 February 2008

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Factors affecting the thin cell performance of a liquid crystal cell are analyzed. Examples based on vertically aligned thin cells are given to illustrate these effects. When the cell gap is below ∼ 2 μm, the liquid crystal alignment material, layer thickness, and anchoring energy all play important roles. The first two factors affect the threshold and on-state voltage, while the last one affects the operating voltage and response time. Three reflective liquid crystal cells are studied experimentally. Good agreement between experiment and theory is obtained.
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42.79.Kr Display devices, liquid-crystal devices

High light extraction efficiency of gallium nitride light emitting diode with silicon oxide hemispherical microlens

M. K. Lee, C. L. Ho, and C. H. Fan

Appl. Phys. Lett. 92, 061103 (2008); http://dx.doi.org/10.1063/1.2841029 (3 pages) | Cited 6 times

Online Publication Date: 11 February 2008

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Silicon oxide hemispherical microlens with the density of 9.5×108 cm−2 was formed on gallium nitride light emitting diode to enhance the light extraction efficiency by liquid phase deposition. The light output power exhibits 1.29 times enhancement compared to that without microlens. After the thermal annealing with nitrous oxide, the output power is further improved to 1.44 times due to higher silicon oxide quality and gallium nitride surface passivation.
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85.60.Jb Light-emitting devices

Photoscattering effect in supercontinuum-generating photonic crystal fiber

H. Tu, D. L. Marks, Z. Jiang, and S. A. Boppart

Appl. Phys. Lett. 92, 061104 (2008); http://dx.doi.org/10.1063/1.2857495 (3 pages) | Cited 2 times

Online Publication Date: 12 February 2008

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A photosensitivity different from that responsible for fiber grating inscription is found in a supercontinuum-generating photonic crystal fiber transmitting intense 818 nm femtosecond pulses. This photosensitivity progressively generates a waveguide at the entrance of the fiber to scatter light of specific wavelengths and is termed as the photoscattering effect. This effect is linked to the ∼ 800 nm photosensitivity in the microlithography of bulk silica glass. While the effect somewhat limits fiber-optic supercontinuum applications, it can be beneficial to produce new photonic devices.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.-k Nonlinear optics

Efficient coupling to W1 photonic crystal waveguide on InP membrane through suspended access guides

A. Talneau, K. H. Lee, S. Guilet, and I. Sagnes

Appl. Phys. Lett. 92, 061105 (2008); http://dx.doi.org/10.1063/1.2841817 (3 pages) | Cited 9 times

Online Publication Date: 13 February 2008

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Suspended access ridges have been designed and integrated with a single-missing row photonic crystal guide on InP membrane in order to improve the coupling efficiency. This integration provides control of the injection into the photonic crystal (PhC) guide and a deterministic choice of the termination of the PhC. Low propagation losses have been measured for both the photonic crystal guide on InP membrane and the suspended ridges.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials

Pointing stabilization of a high-repetition-rate high-power femtosecond laser for intense few-cycle pulse generation

Takuya Kanai, Akira Suda, Samuel Bohman, Masanori Kaku, Shigeru Yamaguchi, and Katsumi Midorikawa

Appl. Phys. Lett. 92, 061106 (2008); http://dx.doi.org/10.1063/1.2842414 (3 pages) | Cited 13 times

Online Publication Date: 13 February 2008

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We have developed a beam stabilization system for high-power femtosecond lasers operating at a repetition rate of 1 kHz. The beam pointing at a hollow fiber input was stabilized to within 1 μm rms and the fluctuations of the broadened spectra and power were significantly improved. This technique enables us to increase the input power to a hollow fiber for intense few-cycle pulse generation.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities

A. A. Khalifa, A. P. D. Love, D. N. Krizhanovskii, M. S. Skolnick, and J. S. Roberts

Appl. Phys. Lett. 92, 061107 (2008); http://dx.doi.org/10.1063/1.2844860 (3 pages) | Cited 23 times

Online Publication Date: 13 February 2008

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The authors report the observation of electroluminescence from GaAs-based semiconductor microcavities in the strong coupling regime. At low current densities, the emission consists of two peaks, which exhibit anticrossing behavior as a function of detection angle and thus originate from polariton states. With increasing carrier injection, we observe a progressive transition from strong to weak coupling due to screening of the exciton resonance by free carriers. The demonstration that polariton emission can be excited by electrical injection is encouraging for future development of polariton lasers.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
81.05.Ea III-V semiconductors

GaN doped with neodymium by plasma-assisted molecular beam epitaxy

E. D. Readinger, G. D. Metcalfe, H. Shen, and M. Wraback

Appl. Phys. Lett. 92, 061108 (2008); http://dx.doi.org/10.1063/1.2844850 (3 pages) | Cited 6 times

Online Publication Date: 13 February 2008

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We report in situ doping of GaN with the rare earth element Nd by plasma-assisted molecular beam epitaxy. For the highest Nd effusion cell temperatures, Rutherford backscattering and secondary ion mass spectroscopy data indicate ∼ 5 at. % Nd in epilayers grown on c-plane sapphire. X-ray diffraction found no evidence of phase segregation under nitrogen-rich conditions with up to ∼ 1 at. % Nd, with the highest luminescence intensities corresponding to doping of ∼ 0.5 at. %. Spectral correlation of the Nd emission multiplets for above (325 nm) and below (836 nm) GaN bandgap excitations implies enhanced substitutional doping at the Ga site.
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61.72.uj III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Electrical tuning of birefringence in silicon waveguides

K. K. Tsia, S. Fathpour, and B. Jalali

Appl. Phys. Lett. 92, 061109 (2008); http://dx.doi.org/10.1063/1.2883925 (3 pages) | Cited 8 times

Online Publication Date: 14 February 2008

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We demonstrate dynamic control of the birefringence in a silicon waveguide. Electrically tunable stress on the waveguide core is induced using an integrated piezoelectric film. We show that the induced birefringence can be used to fine tune the phase mismatch among interacting waves present in parametric nonlinear optical effects.
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42.65.Wi Nonlinear waveguides
42.82.Et Waveguides, couplers, and arrays
78.20.Fm Birefringence
77.55.-g Dielectric thin films
42.65.-k Nonlinear optics

Wavelength dependent phase locking in quantum cascade laser Y-junctions

L. K. Hoffmann, C. A. Hurni, S. Schartner, E. Mujagić, A. M. Andrews, P. Klang, W. Schrenk, M. P. Semtsiv, W. T. Masselink, and G. Strasser

Appl. Phys. Lett. 92, 061110 (2008); http://dx.doi.org/10.1063/1.2841634 (3 pages) | Cited 5 times

Online Publication Date: 14 February 2008

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Midinfrared quantum cascade lasers with monolithically integrated Y-junctions are investigated. Two different emission wavelengths of 10.5 and 4.2 μm were realized in two different material systems, lattice-matched GaAs/AlGaAs on GaAs and strain-compensated InGaAs/InAlAs/AlAs on InP. With identical Y-junction dimensions, phase locking is observed in both structures. In GaAs based devices, fundamental lateral modes are present in the coupled waveguides, which are coherently synchronized at the Y-junction. In InP based devices, modes of higher order are excited, which originate from coupling. The generation of multiple modes yields an out-of-phase fraction which reduces the level of coherence.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Three envelope approach for ultrafast pulse characterization in a pump-probe experiment

Balakishore Yellampalle, Elbert E. M. Chia, Kiyong Kim, Antoinette J. Taylor, and Richard Averitt

Appl. Phys. Lett. 92, 061111 (2008); http://dx.doi.org/10.1063/1.2837660 (3 pages) | Cited 1 time

Online Publication Date: 14 February 2008

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We demonstrate an approach for the complete characterization of temporally identical ultrashort pulses at the focal point in a pump-probe experiment for potential use of pump-probe data deconvolution. Our approach uses three envelope measurements, autocorrelation, fundamental, and second harmonic spectra, combined with an error minimization pulse retrieval scheme. The three envelope approach is suitable when the measured envelopes have low noise and minimal systematic errors.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.30.-d Imaging and optical processing
06.60.Jn High-speed techniques (microsecond to femtosecond)

Broadband moth-eye antireflection coatings on silicon

Chih-Hung Sun, Peng Jiang, and Bin Jiang

Appl. Phys. Lett. 92, 061112 (2008); http://dx.doi.org/10.1063/1.2870080 (3 pages) | Cited 92 times

Online Publication Date: 14 February 2008

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We report a bioinspired templating technique for fabricating broadband antireflection coatings that mimic antireflective moth eyes. Wafer-scale, subwavelength-structured nipple arrays are directly patterned on silicon using spin-coated silica colloidal monolayers as etching masks. The templated gratings exhibit excellent broadband antireflection properties and the normal-incidence specular reflection matches with the theoretical prediction using a rigorous coupled-wave analysis (RCWA) model. We further demonstrate that two common simulation methods, RCWA and thin-film multilayer models, generate almost identical prediction for the templated nipple arrays. This simple bottom-up technique is compatible with standard microfabrication, promising for reducing the manufacturing cost of crystalline silicon solar cells.
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42.79.Wc Optical coatings
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.70.Dd Colloids
84.60.Jt Photoelectric conversion

Ytterbium-doped solid core photonic bandgap fiber for laser operation around 980 nm

V. Pureur, L. Bigot, G. Bouwmans, Y. Quiquempois, M. Douay, and Y. Jaouen

Appl. Phys. Lett. 92, 061113 (2008); http://dx.doi.org/10.1063/1.2857464 (3 pages) | Cited 35 times

Online Publication Date: 15 February 2008

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We report on the design and characterization of an ytterbium-doped solid core photonic bandgap fiber laser operating at 977 nm. By adjusting the fiber optogeometrical parameters, we favored laser gain in the three level configuration thanks to the introduction of bandgap losses in the wavelength range above 1000 nm; avoiding thus laser operation in the four level configuration. A slope efficiency of η ∼ 65% has been obtained for a 99%–4% laser cavity.
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42.70.Qs Photonic bandgap materials
42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.55.Tv Photonic crystal lasers and coherent effects
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nonpolar GaN-based microcavity using AlN/GaN distributed Bragg reflector

T. Zhu, A. Dussaigne, G. Christmann, C. Pinquier, E. Feltin, D. Martin, R. Butté, and N. Grandjean

Appl. Phys. Lett. 92, 061114 (2008); http://dx.doi.org/10.1063/1.2857500 (3 pages) | Cited 1 time

Online Publication Date: 15 February 2008

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Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ∼ 95% together with a flat stopband of 30 nm width. The cavity mode centered around 390 nm is characterized by a full width at half maximum of 4 nm. The optical properties of both the DBR and MC are well reproduced when accounting for linear birefringence effects.
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42.82.-m Integrated optics
78.20.Fm Birefringence

Efficient energy extraction from large-mode-area, short, heavily Er:Yb codoped phosphate-glass fiber for pulsed laser applications

Pavel Polynkin, N. Peyghambarian, and Jerome Moloney

Appl. Phys. Lett. 92, 061115 (2008); http://dx.doi.org/10.1063/1.2870002 (3 pages) | Cited 2 times

Online Publication Date: 15 February 2008

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Experimental demonstration of an efficient energy extraction from heavily Er:Yb codoped phosphate-glass fiber is reported. In our experiments, sub-20-ns pulses at 1.5 μm wavelength produced by an actively Q-switched all-fiber oscillator are amplified in 15 cm long, side-pumped phosphate fiber doped with 1 wt % of Er2O3 and 8 wt % of Yb2O3. Two types of active fiber are used, with core diameters of 14 and 25 μm. The pulse energy achieved with these fibers is 105 and 215 μJ, respectively, with nearly diffraction-limited beam quality. These experiments indicate a potential for further energy scaling beyond the millijoule level by increasing the core size of the fiber.
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42.55.Wd Fiber lasers
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.70.Ce Glasses, quartz

Large sensitive-area NbN nanowire superconducting single-photon detectors fabricated on single-crystal MgO substrates

Shigehito Miki, Mikio Fujiwara, Masahide Sasaki, Burm Baek, Aaron J. Miller, Robert H. Hadfield, Sae Woo Nam, and Zhen Wang

Appl. Phys. Lett. 92, 061116 (2008); http://dx.doi.org/10.1063/1.2870099 (3 pages) | Cited 45 times

Online Publication Date: 15 February 2008

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We report on the performance of large area NbN nanowire superconducting single-photon detectors (SSPDs). 20×20 μm2 area SSPDs with 80 and 100 nm linewidths and 50% fill factor were fabricated in 4-nm-thick NbN films grown on single-crystal MgO substrates. The high quality of the devices was verified by electrical and optical testing and compares favorably to measurements of 10×10 μm2 area SSPDs. Measurements of kinetic inductance versus bias current indicate that the constriction density is low. The fiber-coupled detection efficiency of the devices was 0.4%–3.5% at 100 Hz dark count rate.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering
74.25.Sv Critical currents
61.46.-w Structure of nanoscale materials

Oscillating wave sensor based on the Goos–Hänchen effect

Yi Wang, Honggen Li, Zhuangqi Cao, Tianyi Yu, Qishun Shen, and Ying He

Appl. Phys. Lett. 92, 061117 (2008); http://dx.doi.org/10.1063/1.2883929 (3 pages) | Cited 11 times

Online Publication Date: 15 February 2008

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Instead of the evanescent field sensors, an oscillating wave sensor based on the Goos–Hänchen effect is proposed in this letter. It is demonstrated that as the intrinsic damping is well-matched with the radiative damping of the ultrahigh-order modes in a symmetrical metal-cladding waveguide with submillimeter scale, the enormously enhanced lateral beam shift results in a very high sensitivity of the sensor.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Spatial distribution of crown shaped light emission from a periodic inverted polygonal deflector embedded in an InGaN/GaN light emitting diode

Hyung Gu Kim, Tran Viet Cuong, Hyun Jeong, Seung Hee Woo, Ok Hwan Cha, Eun-Kyung Suh, Chang-Hee Hong, Hyung Koun Cho, Bo Hyun Kong, and Mun Seok Jeong

Appl. Phys. Lett. 92, 061118 (2008); http://dx.doi.org/10.1063/1.2883932 (3 pages) | Cited 6 times

Online Publication Date: 15 February 2008

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We investigated spatial light emission from a periodic inverted polygonal deflector, which included six {10-1-1} facets and six {11-2-2} facets embedded in an InGaN/GaN light emitting diode by using confocal scanning electroluminescence microscopy. We found a noticeable crown shape with the contrast of luminescence intensity and wavelength observed on these facets mainly due to the variation of growth rate for the InGaN quantum wells. In addition, a very low intensity and blueshifted emission wavelength on the {11-2-2} facets indicated the deficiency of indium incorporation and/or much thinner well thickness as compared to that of the {10-1-1} facets.
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85.60.Jb Light-emitting devices
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Sheath and presheath in ion-ion plasmas via particle-in-cell simulation

A. Meige, G. Leray, J.-L. Raimbault, and P. Chabert

Appl. Phys. Lett. 92, 061501 (2008); http://dx.doi.org/10.1063/1.2838293 (3 pages) | Cited 5 times

Online Publication Date: 11 February 2008

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A full particle-in-cell simulation is developed to investigate electron-free plasmas constituted of positive and negative ions under the influence of a dc bias voltage. It is shown that high-voltage sheaths following the classical Child-law sheaths form within a few microseconds (which corresponds to the ion transit time) after the dc voltage is applied. It is also shown that there exists the equivalent of a Bohm criterion where a presheath accelerates the ions collected at one of the electrodes up to the sound speed before they enter the sheath. From an applied perspective, this leads to smaller sheaths than one would expect.
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52.40.Kh Plasma sheaths
52.65.Rr Particle-in-cell method

Improvement of the vacuum ultraviolet efficiency of low pressure Xe discharge by nitrogen admixture

Ki Wan Park, Hyeon Seok Hwang, Man Hyeop Han, Hong Koo Baik, and Kie Moon Song

Appl. Phys. Lett. 92, 061502 (2008); http://dx.doi.org/10.1063/1.2842408 (3 pages) | Cited 4 times

Online Publication Date: 13 February 2008

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We investigated Xe–N2 gas discharge primarily as a source of vacuum ultraviolet for florescent lamps. The discharge performances of Xe based nitrogen admixture gas are improved when compared with the results of pure Xe discharge. The experimental results come from investigating the Xe positive column and were determined by measuring the infrared radiation during the discharge operation. These results suggest that the integrated infrared area is increased by about 40% under optimal conditions. This efficiency increase occurs because low energy electrons contribute to the production of exited nitrogen, which can excite Xe gas.
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52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
42.72.Bj Visible and ultraviolet sources

Formation of stable direct current microhollow cathode discharge by venturi gas flow system for remote plasma source in atmosphere

Ki Wan Park, Tae Il Lee, Hyeon Seok Hwang, Joo Hyon Noh, Hong Koo Baik, and Kie Moon Song

Appl. Phys. Lett. 92, 061503 (2008); http://dx.doi.org/10.1063/1.2842427 (3 pages) | Cited 2 times

Online Publication Date: 13 February 2008

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We introduce a microhollow cathode configuration with venturi gas flow to ambient air in order to obtain glow discharge at atmospheric pressure. Stable microhollow cathode discharge was formed in a 200 μm diameter at 9 mA and the optimum value of gas velocity×diameter for hollow cathode effect was obtained in our system. In order to confirm hollow cathode effect, we measured the enhancement of E/N strength for 200 μm (0.31 m2/s) and 500 μm (0.78 m2/s) air discharge at 8 mA under the velocity of 156 m/s. As a result, an increase of 46.7% in E/N strength of the discharge of 200 μm hole was obtained compare to that of 500 μm.
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52.80.Hc Glow; corona
52.50.Dg Plasma sources

Plasma power measurement and hysteresis in the E–H transition of a rf inductively coupled plasma system

A. M. Daltrini, S. A. Moshkalev, T. J. Morgan, R. B. Piejak, and W. G. Graham

Appl. Phys. Lett. 92, 061504 (2008); http://dx.doi.org/10.1063/1.2844885 (3 pages) | Cited 16 times

Online Publication Date: 13 February 2008

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An experimental investigation of the argon plasma behavior near the E–H transition in an inductively coupled Gaseous Electronics Conference reference cell is reported. Electron density and temperature, ion density, argon metastable density, and optical emission measurements have been made as function of input power and gas pressure. When plotted versus plasma power, applied power corrected for coil and hardware losses, no hysteresis is observed in the measured plasma parameter dependence at the E–H mode transition. This suggests that hysteresis in the E–H mode transition is due to ignoring inherent power loss, primarily in the matching system.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.-b Plasma properties
52.80.-s Electric discharges
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
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Precipitation analysis on P-implanted silicon by reflectivity spectrum

Shih-An Huang, Kuang-Yao Lo, Li-Hsuan Hsu, and Kuang-Ming Hung

Appl. Phys. Lett. 92, 061901 (2008); http://dx.doi.org/10.1063/1.2839575 (3 pages) | Cited 2 times

Online Publication Date: 11 February 2008

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Reflectivity measurement is used to investigate the precipitation of low-energy phosphorous (P)-implanted Si(111) followed by rapid thermal annealing (RTA). The electrically activated dopant concentration near the surface broadens the critical point peaks and shifts them toward low-photon energy side. The redshift of the E2 peak in the imaginary part of dielectric function is a function of the annealing condition and is strongly related to the electrically activated dopant concentration. The precipitation of P atoms, which arises from the excess P atoms in silicon at lower RTA temperature, is observed through the reflectivity spectrum and theoretical inference.
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81.30.Mh Solid-phase precipitation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
77.22.Ch Permittivity (dielectric function)
61.72.sd Impurity concentration

A diagonal cut through the SiC bulk unit cell: Structure and composition of the 4H-SiC(1math02) surface

C. Virojanadara, M. Hetzel, and U. Starke

Appl. Phys. Lett. 92, 061902 (2008); http://dx.doi.org/10.1063/1.2839384 (3 pages) | Cited 3 times

Online Publication Date: 11 February 2008

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The atomic and electronic structure of 4H-SiC(1math02) surfaces was investigated using low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. Three well ordered phases can be prepared by Si deposition and annealing. The (2×1) phase is Si enriched and terminated by an ordered array of Si-adatom chains which contribute an anisotropic electronic surface state. The c(2×2) phase has a surface composition close to SiC bulk and possesses adatoms in the periodicity of the superlattice. At high temperatures, a (1×1) phase develops with a graphitelike composition.
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73.20.At Surface states, band structure, electron density of states
71.20.Nr Semiconductor compounds
61.66.Fn Inorganic compounds
68.35.Dv Composition, segregation; defects and impurities
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.72.Cc Kinetics of defect formation and annealing

Producing well aligned in situ composites in peritectic systems by directional solidification

L. S. Luo, Y. Q. Su, J. J. Guo, X. Z. Li, H. M. Yang, and H. Z. Fu

Appl. Phys. Lett. 92, 061903 (2008); http://dx.doi.org/10.1063/1.2841639 (3 pages) | Cited 3 times

Online Publication Date: 11 February 2008

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Recently, it was found that cellular peritectic coupled growth (CPCG) can be a candidate method to grow well aligned in situ composites in peritectic alloys. In this letter, we experimentally show that there is a narrow growth region in which CPCG can be stable to avoid the influences of peritectic reaction around the trijunctions and the sidebranching instability to produce well aligned in situ composites. A simplified model was developed to predict the growth region of stable CPCG. Good agreement was obtained between the theoretical predictions and the experimental observations.
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81.05.Ni Dispersion-, fiber-, and platelet-reinforced metal-based composites
81.30.Fb Solidification
64.70.D- Solid-liquid transitions
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