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Applied Physics Letters / Volume 92 / Issue 6 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 92, 063302 (2008); http://dx.doi.org/10.1063/1.2839394 (3 pages)

Anisotropic mobility in large grain size solution processed organic semiconductor thin films

R. L. Headrick1, S. Wo1, F. Sansoz2, and J. E. Anthony3

1Department of Physics and Materials Science Program, University of Vermont, Burlington, Vermont 05405, USA
2School of Engineering and Materials Science Program, University of Vermont, Burlington, Vermont 05405, USA
3Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, USA

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(Received 27 July 2007; accepted 11 January 2008; published online 11 February 2008)

The hollow pen method for writing thin films of materials from solution is utilized to deposit films of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto SiO2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene films deposited from 0.5–4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropic field effect transistor mobility in the films.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier mobility, grain size, organic semiconductors, semiconductor thin films, texture

PACS

  • 68.55.ag

    Semiconductors

  • 73.50.Dn

    Low-field transport and mobility; piezoresistance

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2839394

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

  1. S. R. Forrest, Nature (London) 428, 911 (2004). [MEDLINE]
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  4. M. M. Payne, S. R. Parkin, J. E. Anthony, C. C. Kuo, and T. N. Jackson, J. Am. Chem. Soc. 127, 4986 (2005). [ISI] [MEDLINE]
  5. O. Ostroverkhova, D. G. Cooke, F. A. Hegmann, R. R. Tykwinski, S. R. Parkin, and J. E. Anthony, Appl. Phys. Lett. 89, 192113 (2006)APPLAB000089000019192113000001.
  6. S. K. Park, C. C. Kuo, J. E. Anthony, and T. N. Jackson, Tech. Dig. - Int. Electron Devices Meet. 2005, 4.
  7. R. L. Headrick, H. Zhou, B. Wang, Y. Wang, G. P. Carpenter, A. C. Mayer, M. Lloyd, G. G. Malliaras, A. Kazimirov, and J. E. Anthony, Preprint (available at http://www.uvm.edu/~rheadric).

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) TIPS pentacene lines are deposited over source and drain contacts using a 1.0 mm pen. Both single transistor and four-channel contact geometries are depicted. (b) A polarization mode optical micrograph shows crystalline grains bridging across the transistor channel. The scale bar represents 250 μm. (c) Atomic force microscopy image showing the surface structure of a TIPS pentacene film. Molecular height steps and small islands on the wider terraces are readily visible. (d) Current-voltage characteristics of the transistor shown in (b).

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FIG.2
(a) Bright-field optical micrograph of a film deposited over four gold contacts. The writing direction was from right to left in the image, the concentration was 4 wt %, and the writing speed was 0.48 cm/min. The four-transistor channels thus formed have dimensions of 75×500 μm2. Variations in the color of the film within the channel region are from film thickness variation. The scale bar represents 100 μm. [(b)–(d)] Polarization mode micrographs in three sample orientations. The orientations relative to (a) are displayed above each image. The three images are complementary, and the dark grains collectively account for >95% of the imaged area.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Mobility data extracted from IDS vs Vg curves for an array of 40 four-transistor structures. (a) Correlations for transistors in the same orientation. (b) Correlations for transistors in orthogonal orientations. The lines labeled orientation 1 and orientation 2 are for the model with two preferred grain orientations, which is described in the main text.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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