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11 Feb 2008

Volume 92, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 063101 (2008); http://dx.doi.org/10.1063/1.2839572 (3 pages)

M. N. Ou, T. J. Yang, S. R. Harutyunyan, Y. Y. Chen, C. D. Chen, and S. J. Lai
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Fabrication of single-walled carbon nanotube flexible strain sensors with high sensitivity

Neng-Kai Chang, Chi-Chung Su, and Shuo-Hung Chang

Appl. Phys. Lett. 92, 063501 (2008); http://dx.doi.org/10.1063/1.2841669 (3 pages) | Cited 22 times

Online Publication Date: 11 February 2008

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This work demonstrates a fabrication technique of high sensitivity flexible strain sensors at room temperature. The grown well-aligned millimeter-long single-walled carbon nanotube (SWCNT) was transferred from the silicon substrate to the pretrenched flexible substrate. The sensor design allows effective adhesion between SWCNT and flexible substrate for SWCNT lengthwise strain and piezoresistivity change. Experimental results show that the sensor achieves a high strain resolution of 0.004%. The measured piezoresistive gauge factor of the flexible sensor is 269. The demonstrated fabrication technique of flexible sensors shows advantage of high sensitivity, high quality, and is suitable for mass production.
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81.16.-c Methods of micro- and nanofabrication and processing
85.35.Kt Nanotube devices
07.10.Pz Instruments for strain, force, and torque
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Scanning heterodyne laser interferometer for phase-sensitive absolute-amplitude measurements of surface vibrations

Kimmo Kokkonen and Matti Kaivola

Appl. Phys. Lett. 92, 063502 (2008); http://dx.doi.org/10.1063/1.2840183 (3 pages) | Cited 16 times

Online Publication Date: 12 February 2008

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We describe a scanning heterodyne interferometer for imaging surface vibrations with a wide frequency range, with current electronics, up to 6 GHz. The heterodyne operation facilitates measurement of absolute amplitude and phase of the surface vibration without calibration. Currently, the setup allows detection of vibration amplitudes down to ∼ 1 pm with a lateral resolution of <1 μm. The interferometer is designed to accommodate the different sample types, e.g., surface and bulk acoustic wave devices and micromechanical resonators. The absolute-amplitude and phase information allows for a thorough characterization of surface vibrations in such components and provides direct information of the vibration fields not obtainable via electrical measurements.
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07.60.Ly Interferometers
68.35.Ja Surface and interface dynamics and vibrations

Enhanced green laser activation by antireflective gate structures in panel transistors

Jia-Min Shieh, Chih Chen, Yu-Ting Lin, and Ci-Ling Pan

Appl. Phys. Lett. 92, 063503 (2008); http://dx.doi.org/10.1063/1.2842417 (3 pages) | Cited 3 times

Online Publication Date: 13 February 2008

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Antireflective gate structures of polycrystalline silicon (poly-Si) and silicon dioxide films enable postimplantation green continuous-wave laser annealing of all Si regions of green laser-crystallized panel Si transistors. About 40% of the incident laser-energy penetrates to the channels, owing to antireflective gate structures with the absorptive gate poly-Si, while 65% of the incident laser-energy enters the source/drain regions because of Fresnel reflections at the air/source (drain) interfaces. Such inverted laser-energy profiles and ascendant defect distributions along the channels/junctions/contact regions, yielded continuous, improved epilike Si microstructures over the entire active layer. The electron mobility of the transistors, 620 cm2/V s, approaches that of integrated-circuits transistors.
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85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films

U. K. Das, M. Z. Burrows, M. Lu, S. Bowden, and R. W. Birkmire

Appl. Phys. Lett. 92, 063504 (2008); http://dx.doi.org/10.1063/1.2857465 (3 pages) | Cited 22 times

Online Publication Date: 13 February 2008

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The structure of hydrogenated silicon (Si:H) films deposited by rf and dc plasma process on Si (100) and (111) wafers is correlated with the surface passivation quality and heterojunction cell performance. Microstructural defects associated with SiH2 bonding and apparent ion bombardment in dc plasmas have little or no adverse effect on passivation or cell properties, while presence of crystallinity in Si:H i layer severely deteriorates surface passivation and cell open circuit voltage (Voc). Excellent surface passivation (lifetime of >1 ms) and high efficiency cells (>18%) with Voc of 694 mV are demonstrated on n-type textured Czochralski wafer using dc plasma process.
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81.65.Rv Passivation
81.15.Jj Ion and electron beam-assisted deposition; ion plating
52.77.Dq Plasma-based ion implantation and deposition
61.80.Jh Ion radiation effects
84.60.Jt Photoelectric conversion

Multilayer bipolar field-effect transistors

Shinuk Cho, Jonathan Yuen, Jin Young Kim, Kwanghee Lee, Alan J. Heeger, and Sangyun Lee

Appl. Phys. Lett. 92, 063505 (2008); http://dx.doi.org/10.1063/1.2816913 (3 pages) | Cited 14 times

Online Publication Date: 13 February 2008

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Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling

Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor

M. H. Liao, C. W. Liu, Lingyen Yeh, T.-L. Lee, and M.-S. Liang

Appl. Phys. Lett. 92, 063506 (2008); http://dx.doi.org/10.1063/1.2839402 (3 pages) | Cited 7 times

Online Publication Date: 13 February 2008

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It is found that the ballistic efficiency, channel backscattering ratio, and injection velocity, which are the most important parameters for the ballistic transport, are greatly influenced by the stress characteristic in the channel even on the same gate length device. The narrower gate width device provides the best performance for the n-type field-effect transistor (n-FET) with the same gate length. Thus, the multichannel device is proposed to enhance the n-FET performance in the circuit design. The stress distribution with different device structures were simulated by the three-dimensional finite element mechanical stress simulation, and ballistic efficiency and injection velocity were calculated theoretically based on the stress characteristic. The theoretical calculation and the experimental data indicate the causes of the higher ballistic efficiency and injection velocity in narrower gate width devices to be the strain-induced modulation of the carrier mean-free path and smaller electron effective mass under the biaxial-like stress.
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85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.35.-p Nanoelectronic devices

Strain induced magnetoelectric coupling between magnetite and BaTiO3

H. F. Tian, T. L. Qu, L. B. Luo, J. J. Yang, S. M. Guo, H. Y. Zhang, Y. G. Zhao, and J. Q. Li

Appl. Phys. Lett. 92, 063507 (2008); http://dx.doi.org/10.1063/1.2844858 (3 pages) | Cited 17 times

Online Publication Date: 13 February 2008

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Magnetite (Fe3O4) thin films have been grown on ferroelectric BaTiO3 (BTO) single crystal substrates by pulsed laser deposition. Transmission-electron microscope observations demonstrate the orientation relationship between Fe3O4 and BTO as [400]Fe3O4∥[200]BTO and [004]Fe3O4∥[002]BTO. Experimental measurements of magnetization, coercivity and remanent magnetization of the films show abrupt jumps at around phase transition temperatures of BTO and opposite jump signs are observed for the in-plane and out-of-plane measurements. The magnetization jumps can be suppressed by a strong external magnetic field. These results were discussed in terms of the interface strain induced changes of magnetic domain structure in the Fe3O4 film. This work demonstrates the presence of strong magnetoelectric coupling between Fe3O4 and BTO.
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75.70.Ak Magnetic properties of monolayers and thin films
81.15.Fg Pulsed laser ablation deposition
75.50.Vv High coercivity materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.30.Cr Saturation moments and magnetic susceptibilities

Fullerene (C60) decoration in oxygen plasma treated multiwalled carbon nanotubes for photovoltaic application

Golap Kalita, Sudip Adhikari, Hare Ram Aryal, Masayoshi Umeno, Rakesh Afre, Tetsuo Soga, and Maheshwar Sharon

Appl. Phys. Lett. 92, 063508 (2008); http://dx.doi.org/10.1063/1.2844881 (3 pages) | Cited 17 times

Online Publication Date: 13 February 2008

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Multiwalled carbon nanotubes (MWNTs) were functionalized by oxygen plasma treatment. Photoelectron spectroscopy study of oxygen plasma treated MWNTs (O-MWNTs) shows surface modification with hydroxyl and carboxyl groups. C60 decoration of MWNTs were carried out by thermal evaporation and more dense distribution of C60 was achieved on O-MWNTs. C60 decorated MWNTs were combined with poly(3-octylthiophene) for photovoltaic device fabrication. The device with C60 decorated O-MWNTs shows short circuit current density (Jsc), open circuit voltage (Voc), fill factor, and power conversion efficiency (η) as 1.68 mA/cm2, 0.245 V, 27%, and 0.11%, respectively. It is expected that C60 provide large surface area for photoexcitons dissociation and efficient electron transportation, whereas MWNTs provide efficient hole transportation.
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85.35.Kt Nanotube devices
85.60.-q Optoelectronic devices
79.60.Jv Interfaces; heterostructures; nanostructures
52.77.-j Plasma applications

Thermal conductance of bimaterial microcantilevers

Sheng Shen, Arvind Narayanaswamy, Shireen Goh, and Gang Chen

Appl. Phys. Lett. 92, 063509 (2008); http://dx.doi.org/10.1063/1.2829999 (3 pages) | Cited 11 times

Online Publication Date: 13 February 2008

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In this letter, based on the beam theory and the thermal analysis of a bimaterial cantilever, we demonstrate that the effective thermal conductance of the cantilever and the temperature at the tip of the cantilever can be determined by measuring the bending of the cantilever in response to two different thermal inputs: power absorbed at the tip and ambient temperature.
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07.10.Cm Micromechanical devices and systems

Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells

Valentin D. Mihailetchi, Yuji Komatsu, and L. J. Geerligs

Appl. Phys. Lett. 92, 063510 (2008); http://dx.doi.org/10.1063/1.2870202 (3 pages) | Cited 14 times

Online Publication Date: 14 February 2008

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We have developed a simple method to passivate industrially produced boron-doped emitters for n-type base silicon solar cells using an ultrathin ( ∼ 1.5 nm) silicon dioxide layer between the silicon emitter and the silicon nitride antireflection coating film. This ultrathin oxide is grown at room temperature by soaking the silicon wafers in a solution of nitric acid prior to the deposition of the silicon nitride antireflection coating film. The n-type solar cells processed in such a way demonstrate a conversion efficiency enhancement of more than 2% absolute over the solar cells passivated without the silicon dioxide layer.
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84.60.Jt Photoelectric conversion

High-performance carbon nanotube network transistors for logic applications

Po-Wen Chiu and Chien-Hua Chen

Appl. Phys. Lett. 92, 063511 (2008); http://dx.doi.org/10.1063/1.2844889 (3 pages) | Cited 3 times

Online Publication Date: 14 February 2008

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We report on the fabrication of carbon nanotube network field effect transistors, in which a submonolayer network is selectively and uniformly dispersed in the active region with individually addressable back gate. The high current on/off ratio (104) and good device-to-device uniformity were achieved by selective burnout of metallic pathways. The enhanced capacitive coupling between the gate and nanotube network reduces the subthreshold slope down to 180 mV/dec. The effective local gating allows us to implement logic circuits, such as an inverter and the two most important universal NOR and NAND gates.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices
84.30.Sk Pulse and digital circuits

Improvement in C-V characteristics of Ge metal-oxide semiconductor capacitor by H2O2 incorporated HCl pretreatment

Yoshiki Kamata, Tsunehiro Ino, Masato Koyama, and Akira Nishiyama

Appl. Phys. Lett. 92, 063512 (2008); http://dx.doi.org/10.1063/1.2857477 (3 pages) | Cited 6 times

Online Publication Date: 15 February 2008

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Electrical characteristics of high-κ/Ge metal-oxide semiconductor (MOS) capacitors pretreated with HCl or HF solutions are investigated, including the effect of H2O2 incorporation. HCl treatment is more effective than HF treatment for decreasing equivalent oxide thickness. H2O2 incorporation into HCl solution leads to dramatic decrease in the capacitance at inversion side. We have confirmed that residual metal impurities are reduced below 1010 atoms/cm2 on the Ge surface after pretreatment with mixed solution of HCl and H2O2. We conclude that decrease in metal impurities at Ge surface is responsible for the superior C-V characteristic of Ge MOS capacitor.
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84.32.Tt Capacitors

Rectifying property and magnetocapacitance in multiferroic p-n junction

J. J. Yang, S. M. Guo, L. B. Luo, C. M. Xiong, Y. G. Zhao, and Y. J. He

Appl. Phys. Lett. 92, 063513 (2008); http://dx.doi.org/10.1063/1.2883942 (3 pages) | Cited 2 times

Online Publication Date: 15 February 2008

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Multiferroic p-n junctions were fabricated by growing La0.1Bi0.9MnO3 films on Nb–SrTiO3 using pulsed laser deposition. The current-voltage curves of the junction show good rectifying property. Both the ferroelectric transition and ferromagnetic transition of La0.1Bi0.9MnO3 have remarkable influence on the transport properties of the junction. A large positive magnetocapacitance was also observed in this junction. Analysis suggests that the property of La0.1Bi0.9MnO3/Nb–SrTiO3 is dominated by the property of La0.1Bi0.9MnO3. This work demonstrates that multiferroic p-n junctions possess some interesting properties that may be useful for future applications.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ei Rectification
72.20.My Galvanomagnetic and other magnetotransport effects
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
77.55.-g Dielectric thin films
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