APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

11 Feb 2008

Volume 92, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 063101 (2008); http://dx.doi.org/10.1063/1.2839572 (3 pages)

M. N. Ou, T. J. Yang, S. R. Harutyunyan, Y. Y. Chen, C. D. Chen, and S. J. Lai
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Multiferroic CoFe2O4–Pb(Zr0.52Ti0.48)O3 nanofibers by electrospinning

S. H. Xie, J. Y. Li, Y. Qiao, Y. Y. Liu, L. N. Lan, Y. C. Zhou, and S. T. Tan

Appl. Phys. Lett. 92, 062901 (2008); http://dx.doi.org/10.1063/1.2837185 (3 pages) | Cited 31 times

Online Publication Date: 11 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Multiferroic materials possess two or more types of orders simultaneously that couple the electric and magnetic fields, and composite multiferroics have been widely explored for their excellent magnetoelectric coupling. In this letter, we report a strategy to hybrid multiferroicity at nanoscale. Multiferroic CoFe2O4–Pb(Zr0.52Ti0.48)O3 nanofibers are synthesized by sol-gel process and electrospinning, the spinel structure of CoFe2O4 (CFO) and perovskite structure of Pb(Zr0.52Ti0.48)O3 (PZT) are verified by x-ray diffraction and high resolution transmission electron microscopy, and the multiferroicity of the nanofibers are confirmed by piezoresponse force microscopy and magnetic hysteresis. Excellent ferroelectric and ferromagnetic properties have been observed, which could enable multiferroic devices at nanoscale.
Show PACS
81.07.Bc Nanocrystalline materials
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.80.-e Ferroelectricity and antiferroelectricity
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.46.-w Structure of nanoscale materials

Improvement of ferroelectric fatigue endurance in multiferroic (Ba0.5Sr0.5)TiO3/(Bi1.05La0.05)FeO3/(Ba0.5Sr0.5)TiO3 sandwich structures

Jun Miao, Bo Ping Zhang, Khian Hooi Chew, and Yu Wang

Appl. Phys. Lett. 92, 062902 (2008); http://dx.doi.org/10.1063/1.2841672 (3 pages) | Cited 8 times

Online Publication Date: 11 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the improved ferroelectric properties in dielectric/multiferroic/dielectric sandwich structures composed of Ba0.5Sr0.5TiO3 (BST) and Bi1.05La0.05FeO3 (BLF). Compared with the single BLF film, the trilayer structures exhibit a lower dielectric loss and weaker frequency dependence of dielectric properties. At room temperature, the remnant polarization and saturation polarization of the trilayer structures are 34.3 and 46.9 μC/cm2, respectively. More interestingly, the polarization of BST/BLF/BST trilayer exhibits a fatigue-free characteristic of up to 109 switching cycles. Applying Dawber’s model, the concentration of oxygen vacancies and barrier energy of oxygen vacancies migration in BST/BLF/BST trilayer are calculated as 6.1×1017 cm−3 and 1.33 eV, respectively.
Show PACS
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Inhomogeneous magnetoelectric coupling in Pb(Zr,Ti)O3/Terfenol-D laminate composite

Jian-ping Zhou, Ling Meng, Ze-hu Xia, Peng Liu, and Gang Liu

Appl. Phys. Lett. 92, 062903 (2008); http://dx.doi.org/10.1063/1.2841660 (3 pages) | Cited 17 times

Online Publication Date: 11 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Inhomogeneous magnetoelectric coupling in a simple Pb(Zr,Ti)O3/Terfenol-D laminate composite is investigated. Four magnetic-field-induced voltage (MIV) and three electric-field-induced magnetization (EIM) resonance frequencies are caused by magnetomechanical and electromechanical resonances. The different positions in the sample have different contributions to the MIV and EIM, which are mainly related to the resonant behaviors and the corresponding strain distribution. The MIV distribution shows mirror symmetry, while the EIM distribution shows mirror antisymmetry. The EIM with different directions forms close electric-field-induced magnetic loops around Terfonel-D to meet the lowest magnetic energy. These results are helpful for the future design of magnetoelectric devices.
Show PACS
75.80.+q Magnetomechanical effects, magnetostriction
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Fs Electromechanical resonance; quartz resonators

Enhanced magnetoelectric effect in nanostructured magnetostrictive thin film resonant actuator with field induced spin reorientation transition

Nicolas Tiercelin, V. Preobrazhensky, P. Pernod, and A. Ostaschenko

Appl. Phys. Lett. 92, 062904 (2008); http://dx.doi.org/10.1063/1.2841656 (3 pages) | Cited 10 times

Online Publication Date: 11 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the use of a magnetic instability of the spin reorientation transition type to enhance the magnetoelectric sensitivity in magnetostrictive-piezoelectric structures. We present the theoretical study of a clamped beam resonant actuator composed of a piezoelectric element on a nonpiezo substrate actuated by a magnetostrictive layer. The experiments are made on a polished 150 μm thick 18×3 mm2 lead zirconate titanate (PZT) plate glued to a 50 μm silicon plate and coated with a giant magnetostrictive nanostructured Nx(TbCo2 5nm/FeCo5 nm) layer. Another set of experiments was done with PZT substrate only. Results agree with analytical theory.
Show PACS
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Structural and dielectric properties of epitaxial Sm2O3 thin films

H. Yang, H. Wang, H. M. Luo, D. M. Feldmann, P. C. Dowden, R. F. DePaula, and Q. X. Jia

Appl. Phys. Lett. 92, 062905 (2008); http://dx.doi.org/10.1063/1.2842416 (3 pages) | Cited 13 times

Online Publication Date: 13 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Epitaxial Sm2O3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition. The structural and dielectric properties were investigated. Microstructural studies by x-ray diffraction and transmission electron microscopy showed that the Sm2O3 thin films have a cubic structure and an epitaxial relationship of (004)Sm2O3∥(002)SrTiO3 and [440]Sm2O3∥[200]SrTiO3. A high dielectric constant of 30.5 was found, which can be attributed to the cubic structure and the high crystalline quality and shows a potential application of epitaxial Sm2O3 thin film for high-k material.
Show PACS
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.55.J- Morphology of films

Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

G. Lupina, G. Kozłowski, J. Dabrowski, Ch. Wenger, P. Dudek, P. Zaumseil, G. Lippert, Ch. Walczyk, and H.-J. Müssig

Appl. Phys. Lett. 92, 062906 (2008); http://dx.doi.org/10.1063/1.2842426 (3 pages) | Cited 15 times

Online Publication Date: 13 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thin BaHfO3 dielectric films were investigated in view of future dynamic random access memory applications. The dielectric layers were prepared by physical vapor codeposition of BaO and HfO2 onto metallic TiN substrates. Films deposited at 400 °C are amorphous, show low leakage [J(1 V)<10−8 A/cm2] at capacitance equivalent thicknesses (CETs) down to ∼ 2 nm and a dielectric constant of ∼ 23. Rapid thermal annealing of the amorphous BaHfO3 films induces crystallization in the cubic perovskite phase with a dielectric constant of ∼ 38. This k value was observed for films as thin as 8 nm enabling CET value of ∼ 0.9 nm.
Show PACS
77.55.-g Dielectric thin films
81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.22.Ej Polarization and depolarization
84.32.Tt Capacitors

Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors

H. Kohlstedt, A. Petraru, K. Szot, A. Rüdiger, P. Meuffels, H. Haselier, R. Waser, and V. Nagarajan

Appl. Phys. Lett. 92, 062907 (2008); http://dx.doi.org/10.1063/1.2841917 (3 pages) | Cited 21 times

Online Publication Date: 14 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present investigations on the resistive switching effect in SrRuO3/PbZr0.2Ti0.8O3/Pt ferroelectric capacitors. Using a conductive atomic force microscope, the out-of-plane piezoelectric response and the capacitive and resistive current were simultaneously measured as a function of applied bias voltage. We observed two independent switching phenomena, one attributed to the ferroelectric switching process and the other to resistive switching.We show that I-V curves alone are not sufficient in ferroelectric materials to clarify the underlying switching mechanism and must be used with sufficient caution.
Show PACS
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.80.Fm Switching phenomena
77.65.-j Piezoelectricity and electromechanical effects

Strain-mediated magnetoelectric coupling in BaTiO3-Co nanocomposite thin films

Jung H. Park, Hyun M. Jang, Hyung S. Kim, Chan G. Park, and Sang G. Lee

Appl. Phys. Lett. 92, 062908 (2008); http://dx.doi.org/10.1063/1.2842383 (3 pages) | Cited 14 times

Online Publication Date: 14 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors present a metal-ceramic type composite film in which Co particles with the mean size of 70 nm are uniformly dispersed in an insulating ferroelectric BaTiO3 (BTO) matrix. Transmission electron microscopy images revealed that the Co particle was tightly surrounded with the BTO matrix in atomic scales. The magnetostrictive strain-induced change in the relative dielectric permittivity was demonstrated by observing pronounced magnetodielectric effects under a static bias magnetic field. The present BTO-Co composite thin film also exhibited large dynamic magnetoelectric responses (160–170 mV/cm Oe at 50 kHz) at room temperature by virtue of a tight bonding between the two constituting piezoelectric and magnetostrictive phases.
Show PACS
75.80.+q Magnetomechanical effects, magnetostriction
72.80.Tm Composite materials
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology

Ferromagnetism and magnetodielectric effect in insulating LaBiMn4/3Co2/3O6 thin films

R. Ranjith, Asish K. Kundu, M. Filippi, B. Kundys, W. Prellier, B. Raveau, J. Laverdière, M. P. Singh, and S. Jandl

Appl. Phys. Lett. 92, 062909 (2008); http://dx.doi.org/10.1063/1.2842409 (3 pages) | Cited 13 times

Online Publication Date: 14 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High quality epitaxial thin films of LaBiMn4/3Co2/3O6 perovskite were fabricated on (001)-oriented SrTiO3 and LaAlO3 substrates by the pulsed laser deposition technique. Magnetization measurements reveal a strong magnetic anisotropy and a ferromagnetic behavior that is in agreement with a superexchange interaction between Mn4+ and Co2+ ions, which are randomly distributed in the B site. A distinct anomaly is observed in the dielectric measurements at 130 K corresponding to the onset of the magnetic ordering, suggesting a coupling. Above this temperature, the extrinsic Maxwell–Wagner effect is dominating. These results are explained using the Raman spectroscopic studies indicating a weak spin-lattice interaction around this magnetic transition.
Show PACS
68.55.aj Insulators
68.55.A- Nucleation and growth
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
75.30.Gw Magnetic anisotropy
78.20.Fm Birefringence
81.16.Mk Laser-assisted deposition

Epitaxial (001) BiFeO3 membranes with substantially reduced fatigue and leakage

H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, C. B. Eom, Y. H. Chu, P. Shafer, R. Ramesh, V. Vaithyanathan, and D. G. Schlom

Appl. Phys. Lett. 92, 062910 (2008); http://dx.doi.org/10.1063/1.2842418 (3 pages) | Cited 30 times

Online Publication Date: 14 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report substantially reduced fatigue and electrical leakage in BiFeO3 membranes fabricated by releasing epitaxial (001) BiFeO3 films from the Si substrates on which they were grown. Fatigue-free switching behavior of up to 1010 cycles was observed for BiFeO3 membranes with Pt top electrodes, while as-grown films break down at ∼ 109 cycles. This is attributed to the low coercive field of BiFeO3 membranes and their being free from substrate clamping. In contrast, (111) BiFeO3 films exhibit significant fatigue at the same electric field. Epitaxial (001) BiFeO3 membranes with low coercive field are very promising for lead-free ferroelectric memory and magnetoelectric devices.
Show PACS
77.80.Fm Switching phenomena
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
75.80.+q Magnetomechanical effects, magnetostriction
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
62.20.me Fatigue

Enhancement in magnetoelectric response in CoFe2O4–BaTiO3 heterostructure

Yi Zhang, Chaoyong Deng, Jing Ma, Yuanhua Lin, and Ce-Wen Nan

Appl. Phys. Lett. 92, 062911 (2008); http://dx.doi.org/10.1063/1.2841048 (3 pages) | Cited 30 times

Online Publication Date: 14 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
CoFe2O4–BaTiO3 heterostructure was epitaxially grown on the (001)-SrTiO3 substrate via pulsed laser deposition, in which the bottom BaTiO3 layer epitaxially grown on the substrate acts as a buffer layer and effectively reduces the coherent constraint in the magnetic layer arising from the substrate. Microstructure studies from x-ray diffraction and electron microscopies showed good coherent epitaxy thin films of the (001)-CoFe2O4 and (001)-BaTiO3 on the substrate, which exhibits simultaneously strong ferroelectric and ferromagnetic responses. An obvious direct magnetoelectric coupling effect was observed in the thin films, which shows an enhancement compared to previous NiFe2O4–BaTiO3 heterostructures.
Show PACS
77.84.Lf Composite materials
75.80.+q Magnetomechanical effects, magnetostriction
81.15.Fg Pulsed laser ablation deposition

Dielectric response and structure of in-plane tensile strained BaTiO3 thin films grown on the LaNiO3 buffered Si substrate

Liang Qiao and Xiaofang Bi

Appl. Phys. Lett. 92, 062912 (2008); http://dx.doi.org/10.1063/1.2857462 (3 pages) | Cited 10 times

Online Publication Date: 15 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Highly (001)-textured BaTiO3 films were grown epitaxially on the LaNiO3 buffered Si substrate. A strong in-plane tensile strain has been revealed by using x-ray diffraction and high resolution transmission electron microscopy. The BaTiO3 film has exhibited a small remnant polarization, indicating the presence of ca1/ca2/ca1/ca2 polydomain state in the film. Temperature dependent dielectric permittivity has demonstrated that two phase transitions occurred at respective temperatures of 170 and 30 °C. The result was discussed in detail based on the misfit strain-temperature phase diagrams theory.
Show PACS
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close