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18 Feb 2008

Volume 92, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 92, 073101 (2008); http://dx.doi.org/10.1063/1.2840574 (3 pages)

N. W. Gong, M. Y. Lu, C. Y. Wang, Y. Chen, and L. J. Chen
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Electrode structures in diode-type cadmium telluride detectors: Field emission scanning electron microscopy and energy-dispersive x-ray microanalysis

Kyoko Okada, Hideyuki Yasufuku, Hideki Yoshikawa, and Yoshiharu Sakurai

Appl. Phys. Lett. 92, 073501 (2008); http://dx.doi.org/10.1063/1.2825565 (3 pages) | Cited 5 times

Online Publication Date: 20 February 2008

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The structures of the interface regions between CdTe crystal and electrodes in diode-type CdTe x-ray detectors with a layout of In(anode)/CdTe/Pt(cathode) are reported. The structures have been investigated by field emission scanning electron microscopy and energy-dispersive x-ray microanalysis. The investigation has revealed that the structures are complicated. The anode-side interface is a contact between In1−xTex alloys and CdTe crystal. The cathode side is a structure of Pt/(Te-rich phase)/CdTe. These findings suggest that the complicated structures in the interface regions are a possible cause for the polarization phenomenon observed in the diode-type CdTe detectors.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
82.45.Fk Electrodes
29.40.Wk Solid-state detectors

Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor

Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, and Toshiro Hiramoto

Appl. Phys. Lett. 92, 073502 (2008); http://dx.doi.org/10.1063/1.2857501 (3 pages) | Cited 4 times

Online Publication Date: 20 February 2008

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A unique feature of the extremely long-range-extended blockade regime with its shape of a long stick, where the Coulomb blockade oscillation and negative differential conductance peak-positions can be systematically and precisely modulated for both extremely-wide VG and VD ranges, was clearly observed in a room-temperature-operating silicon single hole transistor. These results originate from the large quantum level spacing, large tunnel-barrier height, small tunnel-barrier curvature, small bias-induced barrier modulation, and large voltage gain, attributing to the formation of an ultrasmall dot in the gently sloped tunnel barriers along the [100] Si nanowire channel having the large subband modulation.
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85.30.Tv Field effect devices

Designing liquid crystal alignment surfaces

S. C. Kitson, E. G. Edwards, and A. D. Geisow

Appl. Phys. Lett. 92, 073503 (2008); http://dx.doi.org/10.1063/1.2884266 (3 pages)

Online Publication Date: 21 February 2008

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We have previously shown that tilted micron-scale posts can be used to generate uniform liquid crystal alignment. By considering the geometry and symmetry of individual surface features in more detail, we have been able to demonstrate finer control of alignment, eliminate the need for tilted structures, and show multidomain alignment.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
61.30.Hn Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions
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