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18 Feb 2008

Volume 92, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 92, 073101 (2008); http://dx.doi.org/10.1063/1.2840574 (3 pages)

N. W. Gong, M. Y. Lu, C. Y. Wang, Y. Chen, and L. J. Chen
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Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, C. C. Liao, and K. Y. Cheng

Appl. Phys. Lett. 92, 072901 (2008); http://dx.doi.org/10.1063/1.2883967 (3 pages) | Cited 46 times

Online Publication Date: 19 February 2008

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Atomic-layer-deposited high κ dielectric HfO2 films on air-exposed In0.53Ga0.47As/InP (100), using Hf(NCH3C2H5)4 and H2O as the precursors, were found to have an atomically sharp interface free of arsenic oxides, an important aspect for Fermi level unpinning. A careful and thorough probing, using high-resolution angular-resolved x-ray photoelectron spectroscopy (XPS) with synchrotron radiation, however, observed the existence of Ga2O3, In2O3, and In(OH)3 at the interface. The current transport of the metal-oxide-semiconductor capacitor for an oxide 7.8 nm thick follows the Fowler–Nordheim tunneling mechanism and shows a low leakage current density of ∼ 10−8 A/cm2 at VFB+1 V. Well behaved frequency-varying capacitance-voltage curves were measured and an interfacial density of states of 2×1012 cm−2 eV−1 was derived. A conduction-band offset of 1.8±0.1 eV and a valence-band offset of 2.9±0.1 eV have been determined using the current transport data and XPS, respectively.
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77.55.-g Dielectric thin films
81.65.Rv Passivation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states
84.32.Tt Capacitors

Ferroelectric 90° domain structure in a thin film of BaTiO3 fine ceramics observed by 300 kV electron holography

Takao Matsumoto, Masanari Koguchi, Keigo Suzuki, Hitoshi Nishimura, Yasuhiro Motoyoshi, and Nobuyuki Wada

Appl. Phys. Lett. 92, 072902 (2008); http://dx.doi.org/10.1063/1.2857469 (3 pages) | Cited 2 times

Online Publication Date: 19 February 2008

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We observed 90° ferroelectric domain structure in a thin film of BaTiO3 by 300 kV electron holography, especially paying attention to beam-induced influence on the polarization and diffraction effect. The beam-induced influence was minimized by recording holograms on high-resolution films at low electron-optical magnification. As for the diffraction effect, we chose such an orientation of the specimen as to minimize the corresponding amplitude contrast. Furthermore, to minimize any phase shifts that are not intrinsic to ferroelectricity, such as the mean-inner potential of the material or the electron-beam-induced charging under the illumination condition, we calculated the difference between phase images taken below and above the Curie temperature of the material to obtain a consistent value for the spontaneous polarization.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
78.66.-w Optical properties of specific thin films

Magnetoelectric characteristics of a dual-mode magnetostrictive/piezoelectric bilayered composite

Lei Li and Xiang Ming Chen

Appl. Phys. Lett. 92, 072903 (2008); http://dx.doi.org/10.1063/1.2840177 (3 pages) | Cited 11 times

Online Publication Date: 20 February 2008

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The magnetoelectric characteristics of a Terfenol-D/Pb(Zr,Ti)O3 bilayered composite were investigated, and an additional bending vibration mode due to the asymmetrical structure was observed besides the length vibration mode which also acted in the symmetrical trilayered composites. The module of magnetoelectric coefficient for the bilayered composite at 1 kHz was significantly lower than those for the trilayered composites, and one more resonant peak was observed at a lower frequency of 15.57 kHz. The combination of bending and length vibration modes was responsible for the unique magnetoelectric characteristics of the dual-mode bilayered composite. Moreover, theoretical discussion indicated that the shape of the lower-frequency resonant peak was variable and determined by the module and phase differences for the two vibration modes.
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75.80.+q Magnetomechanical effects, magnetostriction
77.65.Bn Piezoelectric and electrostrictive constants

Effect of dc bias on pressure-induced depolarization of Pb(Nb,Zr,Sn,Ti)O3 ceramics

Zhonghua Dai, Zhuo Xu, and Xi Yao

Appl. Phys. Lett. 92, 072904 (2008); http://dx.doi.org/10.1063/1.2883972 (3 pages) | Cited 8 times

Online Publication Date: 20 February 2008

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The polarization and depolarization of antiferroelectric Pb(Nb,Zr,Sn,Ti)O3 (PNZST) ceramics under a dc bias were studied in a hydraulic pressure from 0 to 250 MPa. It is found that the antiferroelectric ceramic can be induced to a metastable ferroelectric state and that the ceramic at this ferroelectric state can be switched to the antiferroelectric state using hydraulic pressure. The hydraulic pressure to induce the transition from the ferroelectric to the antiferroelectric states increases with the positive and decreases with the negative dc bias. Based on the results, the pressure–electric field phase diagram for polarized PNZST ceramics was established.
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77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Precision nanoscale domain engineering of lithium niobate via UV laser induced inhibition of poling

C. L. Sones, A. C. Muir, Y. J. Ying, S. Mailis, R. W. Eason, T. Jungk, Á. Hoffmann, and E. Soergel

Appl. Phys. Lett. 92, 072905 (2008); http://dx.doi.org/10.1063/1.2884185 (3 pages) | Cited 17 times

Online Publication Date: 20 February 2008

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Continuous wave ultraviolet laser irradiation at λ = 244 nm on the +z face of undoped and MgO doped congruent lithium niobate single crystals has been observed to inhibit ferroelectric domain inversion. The inhibition occurs directly beneath the illuminated regions, in a depth greater than 100 nm during subsequent electric field poling of the crystal. Domain inhibition was confirmed by both differential domain etching and piezoresponse force microscopy. This effect allows the formation of arbitrarily shaped domains in lithium niobate and forms the basis of a high spatial resolution microstructuring approach when followed by chemical etching.
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77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Dielectric properties of MgO-doped compositionally graded multilayer barium strontium titanate films

M. W. Cole, E. Ngo, S. Hirsch, M. B. Okatan, and S. P. Alpay

Appl. Phys. Lett. 92, 072906 (2008); http://dx.doi.org/10.1063/1.2870079 (3 pages) | Cited 31 times

Online Publication Date: 20 February 2008

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We have grown 5 mol % MgO-doped multilayered Ba1−xSrxTiO3 (BST) films having a nominal thickness of 220 nm with compositions of each layer as BST60/40, BST75/25, and BST90/10 (upgraded). We also fabricated undoped upgraded BST and uniform BST60/40 films for comparison. Results show that Mg-doping improves dielectric loss (tan δ = 0.008) and yields better surface roughness ( ∼ 3.1 nm) compared to undoped upgraded BST. Mg-doped films displayed excellent temperature stability with temperature coefficient of capacitances of −0.94 and 1.14 ppt/°C from 20 to 90 °C and 20 to −10 °C, respectively. Mg doping resulted in a moderate dielectric tunability (29%) compared to undoped BST (65.5%) at 444 kV/cm.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
61.72.up Other materials
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Effect of postdeposition annealing on the interfacial and electrical properties of high-k NdOxNy gate dielectrics

Tung-Ming Pan and Sung-Ju Hou

Appl. Phys. Lett. 92, 072907 (2008); http://dx.doi.org/10.1063/1.2884333 (3 pages) | Cited 3 times

Online Publication Date: 21 February 2008

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The authors proposed a high-k NdOxNy gate dielectric grown on silicon substrate by reactive rf sputtering. It is found that the NdOxNy gate dielectric after annealing at 700 °C exhibits excellent electrical properties such as high capacitance value, small interface state, low leakage current, and almost no hysteresis in the capacitance-voltage curves. This indicates that annealing at 700 °C treatment can suppress the interfacial layer and silicate formation, reduce interface traps, and anneal out defects.
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81.40.Gh Other heat and thermomechanical treatments
73.61.Ng Insulators
72.20.Fr Low-field transport and mobility; piezoresistance
77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering
68.55.aj Insulators

Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt/Si substrates

Mikael A. Khan, Tim P. Comyn, and Andrew J. Bell

Appl. Phys. Lett. 92, 072908 (2008); http://dx.doi.org/10.1063/1.2839598 (3 pages) | Cited 22 times

Online Publication Date: 21 February 2008

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(1−x)BiFeO3–xPbTiO3 (0.5<x<0.3) thin films have been reported to exhibit high remanent polarizations but device integration is hindered by the presence of leakage currents. An insight into the nature of leakage mechanisms in the films is presented. Films with x = 0.4 and 0.5 exhibit lower leakage currents as compared to x = 0.3 films. At applied fields above 190 kV cm−1, in the region of the coercive field of these films, x = 0.4 and 0.5 exhibit a Poole–Frenkel mechanism while films with x = 0.3 exhibit a combination of space charge limited current and the Schottky effect.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
75.70.Ak Magnetic properties of monolayers and thin films
73.50.Fq High-field and nonlinear effects
73.30.+y Surface double layers, Schottky barriers, and work functions
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