APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

18 Feb 2008

Volume 92, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 073101 (2008); http://dx.doi.org/10.1063/1.2840574 (3 pages)

N. W. Gong, M. Y. Lu, C. Y. Wang, Y. Chen, and L. J. Chen
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers

W. Guo, A. Allenic, Y. B. Chen, X. Q. Pan, W. Tian, C. Adamo, and D. G. Schlom

Appl. Phys. Lett. 92, 072101 (2008); http://dx.doi.org/10.1063/1.2841667 (3 pages) | Cited 13 times

Online Publication Date: 19 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the growth and characterization of single-crystalline, crack-free, epitaxial (0001) ZnO films on (111) Si substrates using intervening epitaxial Lu2O3 buffer layers. The epitaxial orientation relationships are (0001)ZnO∥(111)Lu2O3∥(111)Si and [1math10]ZnO∥[math10]Lu2O3∥[1math0]Si. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Lu2O3 interface. Temperature-dependent photoluminescence measurements show optical properties comparable to ZnO single crystals. The films have a resistivity of 0.31 Ω cm, an electron concentration of 2.5×1017 cm−3, and a mobility of 80 cm2/V⋅s at room temperature. The epitaxial growth of ZnO on Si represents a significant step toward the integration of ZnO-based multifunctional devices with Si electronics.
Show PACS
68.55.ag Semiconductors
73.61.Ga II-VI semiconductors
78.55.Et II-VI semiconductors

Magnetotransport, noise, and x-ray magnetic circular dichroism studies of pulsed laser deposited Fe3O4 film on Si substrates

R. J. Choudhary, Shailja Tiwari, D. M. Phase, Ravi Kumar, P. Thakur, K. H. Chae, and W. K. Choi

Appl. Phys. Lett. 92, 072102 (2008); http://dx.doi.org/10.1063/1.2884267 (3 pages) | Cited 2 times

Online Publication Date: 21 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electrical fluctuation, magnetic, and magneto-transport properties of the (111) oriented Fe3O4 thin film deposited by pulsed laser deposition on technologically important silicon substrate have been studied. Low frequency conduction noise follows the trend of resistivity behavior with respect to temperature and the normalized value of noise drops by two orders of magnitude below the Verwey transition. At room temperature, magnetoresistance of the film is 5% at 8 T. X-ray magnetic circular dichroism measurements performed on 10 nm thick film of Fe3O4 indicate a single crystal-like uniform distribution of Fe ions in its crystal or magnetic structure.
Show PACS
72.20.My Galvanomagnetic and other magnetotransport effects
81.15.Fg Pulsed laser ablation deposition
68.55.at Other materials
78.20.Ls Magneto-optical effects
73.61.Ng Insulators

Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

P. Achatz, J. Pernot, C. Marcenat, J. Kacmarcik, G. Ferro, and E. Bustarret

Appl. Phys. Lett. 92, 072103 (2008); http://dx.doi.org/10.1063/1.2885081 (3 pages) | Cited 7 times

Online Publication Date: 21 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report an experimental determination of the doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Low temperature transport measurements down to 360 mK and temperature dependent Raman experiments down to 5 K, together with secondary ion mass spectroscopy profiling, suggest a critical aluminum concentration lying between 6.4 and 8.7×1020 cm−3 for the metal-insulator transition in these epilayers grown by the vapor-liquid-solid technique. Preliminary indications of a superconducting transition in the metallic sample are presented.
Show PACS
72.60.+g Mixed conductivity and conductivity transitions
73.61.Le Other inorganic semiconductors
61.72.up Other materials

Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

Jin-Seong Park, Jae Kyeong Jeong, Hyun-Joong Chung, Yeon-Gon Mo, and Hye Dong Kim

Appl. Phys. Lett. 92, 072104 (2008); http://dx.doi.org/10.1063/1.2838380 (3 pages) | Cited 73 times

Online Publication Date: 21 February 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of water exposure on amorphous indium-gallium-zinc oxide (a-IGZO) semiconductors was reported. It was found that water can diffuse in and out of the a-IGZO film, reversibly affecting the transistor properties. Two competing mechanisms depending on the thickness of the active channel were clarified. The electron donation effect caused by water adsorption dominated for the thicker a-IGZO films ( ≥ 100 nm), which was manifested in the large negative shift (>14 V) of the threshold voltage. However, in the case of the thinner a-IGZO films ( ⩽ 70 nm), the dominance of the water-induced acceptorlike trap behavior was observed. The direct evidence for this behavior was that the subthreshold swing was greatly deteriorated from 0.18 V/decade (before water exposure) to 4.4 V/decade (after water exposure) for the thinnest a-IGZO films (30 nm). These results can be well explained by the screening effect of the intrinsic bulk traps of the a-IGZO semiconductor.
Show PACS
85.30.Tv Field effect devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close