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Applied Physics Letters / Volume 92 / Issue 8 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 92, 083311 (2008); http://dx.doi.org/10.1063/1.2884687 (3 pages)

Amplified spontaneous emission in quaterthiophene single crystals

Marco Polo1, Andrea Camposeo1, Silvia Tavazzi2, Luisa Raimondo2, Peter Spearman2, Antonio Papagni2, Roberto Cingolani1, and Dario Pisignano1

1National Nanotechnology Laboratory of CNR-INFM, Distretto Tecnologico Scuola Superiore ISUFI, Università del Salento, via Arnesano I-73100, Lecce, Italy
2Dipartimento Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, I-20125 Milano, Italy

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(Received 26 November 2007; accepted 31 January 2008; published online 29 February 2008)

The authors demonstrate amplified spontaneous emission (ASE) from quaterthiophene single crystals and study its behavior at low temperature. The room temperature photoluminescence exhibits line narrowing (spectral width down to 10 nm) at 553 nm for excitation fluence larger than 1 mJ cm−2. At low temperature (10 K), ASE is observed from two vibronic transitions at 510 nm (0-1) and 553 nm (0–2), with line narrowing down to 5 Å, for fluences larger than 100 μJ cm−2. The stimulated emission cross section is of the order of 10−15 cm2, and the ASE is found to be strongly affected by thermally induced dynamic disorder. The emission stability under photopumping is also studied and discussed.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

organic compounds, photoluminescence, spontaneous emission

PACS

  • 78.55.Kz

    Solid organic materials

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2884687

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) PL spectra of a 4T single crystal at room temperature under excitation fluence of 0.5 mJ cm−2 (circles) and 1.5 mJ cm−2 (continuous line) and at 10 K (dotted line). Excitation fluence for the low-temperature spectrum is 0.5 mJ cm−2. Inset: arrangement of the 4T molecules in the unit cell. (b) PL spectra acquired at variable excitation fluences at 10 K. Spectra plotted on a log vertical scale for better clarity. Inset: polarized ASE spectra acquired at 10 K with the analyzer axis parallel to the a crystallographic axis (dashed line) and to the b axis (continuous line).

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Dependence of the ASE integrated intensity (solid circles, left scale) and spectral width (FWHM, open circles, right scale) on the pump fluence at 10 K, for the transitions (0-1) at 510 nm (a) and (0–2) at 553 nm (b), respectively. The dashed lines are the best fits to the data by Eq. ( 1 ).

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) Dependence of the ASE integrated intensity on temperature, at fixed excitation fluence (Eexc = 0.5 mJ cm−2) for the transitions (0-1) at 510 nm (open squares) and (0–2) at 553 nm (full circles). Inset: (0–2) ASE FWHM vs temperature. (b) Temporal evolution of the integrated PL emission under continuous exposure to the excitation beam (intensity 25 mW cm−2).

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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