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25 Feb 2008

Volume 92, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 92, 081101 (2008); http://dx.doi.org/10.1063/1.2883874 (3 pages)

Marcel W. Pruessner, Todd H. Stievater, and William S. Rabinovich
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Field-induced shift of morphotropic phase boundary and effect of overpoling in (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 piezocrystals

A. A. Bokov and Z.-G. Ye

Appl. Phys. Lett. 92, 082901 (2008); http://dx.doi.org/10.1063/1.2841816 (3 pages) | Cited 11 times

Online Publication Date: 26 February 2008

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The domain structure and phase symmetry of the (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 piezoelectric crystals with a composition close to the morphotropic phase boundary (MPB) between the rhombohedral R3m and monoclinic Pm phases (x ≅ 0.3) have been studied by polarized light microscopy. It is found that poling by an electric field parallel to the ⟨001⟩ pseudocubic direction shifts the MPB toward the lower x side. This shift is the origin of the overpoling effect which degrades the performance of the materials, e.g., the piezoelectric coefficient (d33) and dielectric constant decrease with increasing poling field. In optimally poled crystals, d33 can reach as high as 3100 pC/N.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
61.66.Fn Inorganic compounds

Exploration of dielectric constant dependence on evolution of microstructure in nanotube/ferroelectric polymer nanocomposites

Sheng-Hong Yao, Zhi-Min Dang, Hai-Ping Xu, Mei-Juan Jiang, and Jinbo Bai

Appl. Phys. Lett. 92, 082902 (2008); http://dx.doi.org/10.1063/1.2870104 (3 pages) | Cited 14 times

Online Publication Date: 26 February 2008

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Multiwall carbon nanotube (MWNT) with high aspect ratio (AR = 125–750) was dispersed into polyvinylidene fluoride (PVDF) to fabricate the MWNT/PVDF nanocomposites. Change of dielectric constant with increasing the length of tensile strain (LTS) was observed in the MWNT/PVDF composites with different mass concentration of MWNT (mMWNT = 1.0% and mMWNT = 2.0%). The results showed that an abrupt increase in dielectric constant appeared when the LTS was 4 and 2 mm in the composites with mMWNT = 1.0% and mMWNT = 2.0%, respectively. By employing the evolutions of conductive pathway and microcapacitance structure during the tensile strain process, the increased dielectric constant could be explained well.
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61.46.Fg Nanotubes
81.16.-c Methods of micro- and nanofabrication and processing
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Depth profiling of chemical states and charge density in HfSiON by photoemission spectroscopy using synchrotron radiation

T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, and Z. Liu

Appl. Phys. Lett. 92, 082903 (2008); http://dx.doi.org/10.1063/1.2841705 (3 pages) | Cited 4 times

Online Publication Date: 27 February 2008

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We have investigated chemical states and charge density in HfSiON films as a function of depth using x-ray irradiation time-dependent photoemission spectroscopy. N 1s core-level photoemission spectra deconvoluted into three components depend on HfSiON thickness, indicating the component, which is attributed to the N atoms bonded to Hf atoms, has peak near the surface. On the other hand, charge density estimated from band bending in Si from Si 2p photoemission spectra is also distributed mainly near the surface. These results indicate that the origin of the negative charge trapping can be directly related to the presence of Hf–N bonds.
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77.55.-g Dielectric thin films
79.60.Dp Adsorbed layers and thin films
61.80.Cb X-ray effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Sk Insulators

Primary and secondary threshold intensities of ultraviolet-laser-induced domain nucleation in nearly stoichiometric LiTaO3

Ya’nan Zhi, De’an Liu, Aimin Yan, Jianfeng Sun, Yu Zhou, Zhu Luan, Yin Hang, and Liren Liu

Appl. Phys. Lett. 92, 082904 (2008); http://dx.doi.org/10.1063/1.2888747 (3 pages)

Online Publication Date: 27 February 2008

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The primary and secondary threshold intensities of ultraviolet-laser-induced preferential domain nucleation in nearly stoichiometric LiTaO3 is observed. The primary threshold is the minimum intensity to achieve the instantaneous preferential domain nucleation within the focus by the combined action of irradiation and electric fields. The secondary threshold is the minimum intensity to achieve the memory effect without any irradiation within the original focus. The space charge field created by the photoionization carriers is thought to be responsible for the instantaneous effect. The explanation based on the formation and transformation of extrinsic defect is presented for the memory effect.
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61.66.Bi Elemental solids
61.66.Dk Alloys
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
77.22.Jp Dielectric breakdown and space-charge effects

Defect band structure investigation of postbreakdown SiO2

Mingzhen Xu and Changhua Tan

Appl. Phys. Lett. 92, 082905 (2008); http://dx.doi.org/10.1063/1.2888768 (3 pages) | Cited 1 time

Online Publication Date: 28 February 2008

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The defect band structure and properties of postbreakdown SiO2 have been investigated by the variation method of Harrison. The breakdown path of SiO2 can be considered as a one-dimensional linear chain of defects between electrodes. The first soft breakdown occurs when the ratio of the distance between defects to the defect radius locally reaches a critical value of about 8, and hard breakdown occurs when the ratio is about 3.4. The ratio and the Weibull slope are recisymmetrical. Thus, the type and properties of oxide breakdown paths can be determined and analyzed when the Weibull slope is known.
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71.20.-b Electron density of states and band structure of crystalline solids

Structural evolution of a high Tc ferroelectric (x)Bi(Zn1/2Ti1/2)O3–(1−x)PbTiO3 solid solution

X. D. Zhang, Daeyoung Kwon, and Bog G. Kim

Appl. Phys. Lett. 92, 082906 (2008); http://dx.doi.org/10.1063/1.2884321 (3 pages) | Cited 15 times

Online Publication Date: 28 February 2008

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We have studied the structural phase transition of solid solutions (x)Bi(Zn1/2Ti1/2)O3–(1−x)PbTiO3. The temperature evolution of the x-ray diffraction patterns of the θ-2θ scans around {110} has been performed to check the structural phase transitions: The (101)/(011) peak shifts to a larger value, while the (110) peak shifts to a smaller value with increasing temperature. Finally, the peaks merge to the same value at the Curie temperature, indicating a tetragonal to the cubic phase transition. The structural phase transition temperature Tc coincides with the Curie temperature and increases as the increasing Bi(Zn1/2Ti1/2)O3 composition (x). The evolution of the lattice constant, unit cell volume, and tetragonality as functions of temperature and composition is discussed.
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77.80.B- Phase transitions and Curie point
61.66.Fn Inorganic compounds

Spectroscopic analysis of the epitaxial CaO (111)–GaN (0002) interface

H. S. Craft, R. Collazo, M. D. Losego, S. Mita, Z. Sitar, and J.-P. Maria

Appl. Phys. Lett. 92, 082907 (2008); http://dx.doi.org/10.1063/1.2887878 (3 pages) | Cited 3 times

Online Publication Date: 28 February 2008

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We report an x-ray photoelectron spectroscopy (XPS) study of the CaO/GaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski–Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO–GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.
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68.55.ag Semiconductors
68.35.Ct Interface structure and roughness

Substrate-induced strain effect in La0.875Ba0.125MnO3 thin films grown on ferroelectric single-crystal substrates

R. K. Zheng, Y. Wang, H. L. W. Chan, C. L. Choy, and H. S. Luo

Appl. Phys. Lett. 92, 082908 (2008); http://dx.doi.org/10.1063/1.2870100 (3 pages) | Cited 14 times

Online Publication Date: 28 February 2008

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The authors have studied the substrate-induced strain effect in La0.875Ba0.125MnO3 (LBMO) thin films grown on ferroelectric 0.67Pb(Mg1/3Nb2/3)O3–0.33PbTiO3 (PMN-PT) single-crystal substrates. Both the strain and resistance of the films can be in situ varied by applying an electric field across the PMN-PT substrates. X-ray diffraction analysis indicates that the variations of strain and resistance result from the induced strain in the PMN-PT substrate due to the ferroelectric polarization or the converse piezoelectric effect. The relationships between the resistance and the induced strain in the LBMO film and PMN-PT substrate have been quantitatively analyzed.
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77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
68.55.A- Nucleation and growth
68.60.-p Physical properties of thin films, nonelectronic
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