APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

3 Mar 2008

Volume 92, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 093101 (2008); http://dx.doi.org/10.1063/1.2888164 (3 pages)

C. K. Lee, S. J. Kim, S. J. Shin, J. B. Choi, and Y. Takahashi
Enlarge Image | Read More
Page 1 of 6 Pages Next Page | Jump to Page
back to top
RSS Feeds

Temperature influence on the dynamics of vertically aligned liquid crystal displays

Pieter J. M. Vanbrabant, Nathalie Dessaud, and Jan F. Strömer

Appl. Phys. Lett. 92, 091101 (2008); http://dx.doi.org/10.1063/1.2889448 (3 pages) | Cited 10 times

Online Publication Date: 3 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The strong influence of the complex reverse flow phenomenon on the dynamic temperature behavior of vertically aligned liquid crystal displays (VA-LCDs) has been demonstrated. Good agreement was obtained between theoretical and experimental switching profiles over a wide temperature range (25–75 °C). This was achieved using the Leslie–Ericksen theory in a one-dimensional model with material viscosity coefficients obtained from an improved estimation procedure. Such accurate numerical simulations can have a large impact on further improvements of VA-LCDs (e.g., the development of temperature-compensating driving schemes).
Show PACS
66.20.-d Viscosity of liquids; diffusive momentum transport
61.30.-v Liquid crystals

Pretilt angle control for single-cell-gap transflective liquid crystal cells

Tien-Jung Chen and Kuei-Lin Chu

Appl. Phys. Lett. 92, 091102 (2008); http://dx.doi.org/10.1063/1.2889495 (3 pages) | Cited 23 times

Online Publication Date: 3 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Doping a minute amount of photocurable monomers in a liquid crystal (LC) cell, we can stabilize the LC alignment after UV exposure by forming a LC pretilt layer on the substrate surface. By varying the UV exposure time, we can control the pretilt angle of the LCs continuously. A single-cell-gap transflective LC cell was fabricated through a photomask. The LC molecules at the transmissive and reflective pixels are pretilted at 54° and 65°, respectively, at which optimal phase retardations of half and quarter wavelengths are achieved. This type of transflective LC display shows an excellent electro-optical match between the two subpixels.
Show PACS
42.70.Df Liquid crystals
61.30.-v Liquid crystals
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.79.Kr Display devices, liquid-crystal devices

Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

Josep Carreras, J. Arbiol, B. Garrido, C. Bonafos, and J. Montserrat

Appl. Phys. Lett. 92, 091103 (2008); http://dx.doi.org/10.1063/1.2889499 (3 pages) | Cited 15 times

Online Publication Date: 3 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose a light emitting transistor based on silicon nanocrystals provided with 200 Mbits/s built-in modulation. Suppression of electroluminescence from silicon nanocrystals embedded into the gate oxide of a field effect transistor is achieved by fast Auger quenching. In this process, a modulating drain signal causes heating of carriers in the channel and facilitates the charge injection into the nanocrystals. This excess of charge enables fast nonradiative processes that are used to obtain 100% modulation depths at modulating voltages of ∼ 1 V.
Show PACS
85.30.Tv Field effect devices
85.60.Jb Light-emitting devices

Microwave guiding in air by a cylindrical filament array waveguide

M. Châteauneuf, S. Payeur, J. Dubois, and J.-C. Kieffer

Appl. Phys. Lett. 92, 091104 (2008); http://dx.doi.org/10.1063/1.2889501 (3 pages) | Cited 39 times

Online Publication Date: 3 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Microwave guiding was demonstrated over 16 cm in air using a large diameter hollow plasma waveguide. The waveguide was generated with the 100 TW femtosecond laser system at the Advanced Laser Light Source facility. A deformable mirror was used to spatially shape the intense laser pulses in order to generate hundreds of filaments judiciously distributed in a cylindrical shape, creating a cylindrical plasma wall that acts as a microwave waveguide. The microwaves were confined for about 10 ns, which corresponds to the free electron plasma wall recombination time. The characteristics of the plasma waveguide and the results of microwave guiding are presented.
Show PACS
52.40.Fd Plasma interactions with antennas; plasma-filled waveguides
42.60.Fc Modulation, tuning, and mode locking

Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10math0) and (10mathmath) planes

Hisashi Masui, Hisashi Yamada, Kenji Iso, Shuji Nakamura, and Steven P. DenBaars

Appl. Phys. Lett. 92, 091105 (2008); http://dx.doi.org/10.1063/1.2890050 (3 pages) | Cited 16 times

Online Publication Date: 4 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Optical polarization characteristics of InGaN/GaN light-emitting diodes (LEDs) were studied. Light-emitting diode samples were fabricated on four types of GaN substrates near (10math0) orientation with intentional off-axis cuts of 0°, 5°, 10°, and 27° towards [000math]. A confocal microscope was used to characterize the optical polarization of electroluminescence at various currents. The highest polarization ratio of 0.91 was measured on samples fabricated on a 5° off-cut substrate. First moments were calculated on emission spectra to assess emission peak shifts of two polarization components. We drew a conclusion that substrate off-axis cut is a technique to improve optical polarization characteristics of nonpolar-oriented InGaN/GaN LEDs.
Show PACS
85.60.Jb Light-emitting devices

Continuous-wave room temperature operated 3.0 μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers

T. Hosoda, G. Belenky, L. Shterengas, G. Kipshidze, and M. V. Kisin

Appl. Phys. Lett. 92, 091106 (2008); http://dx.doi.org/10.1063/1.2890053 (3 pages) | Cited 11 times

Online Publication Date: 4 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Diode lasers emitting at 3.0 μm were designed and fabricated. Device active region contained two compressively strained InGaAsSb quantum wells incorporated in quinternary AlInGaAsSb barriers. Laser output power at room temperature was 130 mW in continuous wave regime and more than 1 W in pulse.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Electrically driven high-Q quantum dot-micropillar cavities

C. Böckler, S. Reitzenstein, C. Kistner, R. Debusmann, A. Löffler, T. Kida, S. Höfling, A. Forchel, L. Grenouillet, J. Claudon, and J. M. Gérard

Appl. Phys. Lett. 92, 091107 (2008); http://dx.doi.org/10.1063/1.2890166 (3 pages) | Cited 36 times

Online Publication Date: 4 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on electrically pumped high-Q quantum dot-micropillar cavities with quality factors of up to 16.000. A special current injection scheme using a ring-shaped upper contact is presented which ensures an efficient light out-coupling through the uncapped upper surface of the micropillar. The devices feature excellent single-quantum dot cavity quantum electrodynamic effects with a Purcell enhancement of about 10 for a micropillar with a diameter of 2.5 μm.
Show PACS
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.40.Ls Metallization, contacts, interconnects; device isolation
85.30.-z Semiconductor devices

Improving the operation temperature of semiconductor-based terahertz photodetectors: A multiphoton design

Fabrizio Castellano, Rita C. Iotti, and Fausto Rossi

Appl. Phys. Lett. 92, 091108 (2008); http://dx.doi.org/10.1063/1.2890167 (3 pages) | Cited 3 times

Online Publication Date: 4 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose and theoretically investigate a semiconductor-based terahertz-detector design exploiting a multiphoton absorption strategy through a bound-to-bound-to-continuum scheme. Our results demonstrate that such a multisubband architecture may access values of the background-limited infrared photodetection temperature, significantly higher than those of conventional quantum well infrared photodetectors operating at the same frequency, and therefore could represent a better alternative to the latter in the terahertz spectral region.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Spectrally resolved femtosecond Maker fringes technique

Ismael André Heisler, Lino Misoguti, Sérgio Carlos Zílio, Ernesto V. Rodriguez, and Cid Bartolomeu de Araújo

Appl. Phys. Lett. 92, 091109 (2008); http://dx.doi.org/10.1063/1.2890487 (3 pages) | Cited 1 time

Online Publication Date: 4 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a femtosecond third-harmonic generation Maker fringes technique capable of simultaneously providing the magnitude of the cubic nonlinearity and the refractive index dispersion of optical materials. This technique takes advantage of the high intensity and broad spectral band of femtosecond pulses, but requires the use of a spectrometer to deconvolute the information contained in Maker fringes produced by the broad band light.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.-a Optical materials

Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

Il-Kyu Park, Ja-Yeon Kim, Min-Ki Kwon, Chu-Young Cho, Jae-Hong Lim, and Seong-Ju Park

Appl. Phys. Lett. 92, 091110 (2008); http://dx.doi.org/10.1063/1.2890492 (3 pages) | Cited 17 times

Online Publication Date: 4 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN/GaN multiple quantum wells (MQWs) grown by a selective area growth method. Photoluminescence and electroluminescence (EL) spectra of the LED showed emission peaks corresponding to the individual blue and green MQWs. The integrated EL intensity ratio of green to blue emission varied from 2.5 to 6.5 with the injection current below 300 mA, but remained constant at high injection currents above 300 mA. The stability of the emission color at high currents is attributed to parallel carrier injection into both MQWs.
Show PACS
85.60.Jb Light-emitting devices

Terahertz Raman laser based on silicon doped with phosphorus

S. G. Pavlov, H.-W. Hübers, U. Böttger, R. Kh. Zhukavin, V. N. Shastin, J. N. Hovenier, B. Redlich, N. V. Abrosimov, and H. Riemann

Appl. Phys. Lett. 92, 091111 (2008); http://dx.doi.org/10.1063/1.2890717 (3 pages) | Cited 7 times

Online Publication Date: 4 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Raman-type stimulated emission at frequencies between 5.0 and 5.2 THz as well as between 6.1 and 6.4 THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5 K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. The frequencies of the observed laser emission are close to the frequencies of the intracenter laser lines which originate from the 2p0 and 2p± phosphorus states. The Stokes shift of 3.16 THz is equal to the difference between the energies of the phosphorus ground state, 1s(A1), and the 1s(E) excited state.
Show PACS
42.55.Ye Raman lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

White-light light-emitting device based on surface plasmon-enhanced CdSe/ZnS nanocrystal wavelength conversion on a blue/green two-color light-emitting diode

Dong-Ming Yeh, Chi-Feng Huang, Yen-Cheng Lu, and C. C. Yang

Appl. Phys. Lett. 92, 091112 (2008); http://dx.doi.org/10.1063/1.2890730 (3 pages) | Cited 15 times

Online Publication Date: 4 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors demonstrate the implementation of a white-light device by spin-coating CdSe/ZnS nanocrystals (NCs) on the top of a blue/green two-color InGaN/GaN quantum-well light-emitting diode for converting blue and green emissions into red light through the absorption/reemission process. Meanwhile, Au nanoparticles are mixed with CdSe/ZnS NCs for generating localized surface plasmon (LSP) modes to couple with the CdSe/ZnS NCs. The LSP modes can absorb green emission and effectively transfer the energy into the CdSe/ZnS NCs through the coupling process for enhancing red emission. With the LSP coupling process, the conversion efficiency from the blue/green range into red light can be increased by around 30%. The conversion quantum efficiency can reach 52.8%.
Show PACS
85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Improving spatial resolution and reducing aspect ratio in multiphoton polymerization nanofabrication

Xian-Zi Dong, Zhen-Sheng Zhao, and Xuan-Ming Duan

Appl. Phys. Lett. 92, 091113 (2008); http://dx.doi.org/10.1063/1.2841042 (3 pages) | Cited 17 times

Online Publication Date: 5 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors investigate the phenomena affecting lateral spatial resolution (LSR) and aspect ratio (AR) in multiphoton polymerization (MPP) nanofabrication. A LSR of 50 nm and an AR of 1.38 were achieved for photocured polymer lines on the surface of a substrate by continuing scanning mode. Theoretical analysis based on the distribution of light intensity in this setup indicates that the LSR could be improved to better than 20 nm. The asymmetric shrinkage of voxel in the axial and lateral directions has a significant impact for obtaining features of low AR, which are a critical requirement for construction of micro/nanodevices by MPP nanofabrication.
Show PACS
81.16.-c Methods of micro- and nanofabrication and processing
82.50.Pt Multiphoton processes
82.35.-x Polymers: properties; reactions; polymerization

Curving monolithic silicon for nonplanar focal plane array applications

Rostam Dinyari, Seung-Bum Rim, Kevin Huang, Peter B. Catrysse, and Peter Peumans

Appl. Phys. Lett. 92, 091114 (2008); http://dx.doi.org/10.1063/1.2883873 (3 pages) | Cited 21 times

Online Publication Date: 5 March 2008

Full Text: Read Online (HTML) | Download PDF


See Also: Publisher's Note

Show Abstract
Despite progress in the performance of image sensors, comparatively little work has focused on overcoming the limitations of planar image sensor arrays. We present a technique to construct curved monolithic silicon structures that can be processed using standard silicon processing prior to curving. The process relies on microstructuring of a monolithic silicon die using a deep reactive ion etch process. This technique can be used to build curved integrated circuits such as image sensors for more compact cameras with improved optical performance.
Show PACS
42.79.Pw Imaging detectors and sensors
42.82.-m Integrated optics
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Optically tuned resonant optical reflectance filter

Fuchyi Yang, Gary Yen, Gilles Rasigade, Julio A. N. T. Soares, and Brian T. Cunningham

Appl. Phys. Lett. 92, 091115 (2008); http://dx.doi.org/10.1063/1.2890713 (3 pages) | Cited 12 times

Online Publication Date: 5 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We describe the design, fabrication, and characterization of a narrow band tunable guided mode resonance (GMR) reflectance filter that is actuated by optically induced trans-cis isomerization of an azobenzene liquid crystal. Constructing a plastic replica-molded containment cell with a rubbed polyimide film to initially direct the liquid crystal molecular orientation parallel to the grating lines of the GMR filter, isomerization caused by exposure to a λ = 532 nm laser results in a −25 nm shift of the resonant reflected wavelength.
Show PACS
42.79.Ci Filters, zone plates, and polarizers
42.25.Gy Edge and boundary effects; reflection and refraction
82.30.Qt Isomerization and rearrangement
42.70.Df Liquid crystals

Birefringence of β-BaB2O4 crystal in the terahertz region for parametric device design

Elmer Estacio, Shigeki Saito, Tomoharu Nakazato, Yusuke Furukawa, Nobuhiko Sarukura, Marilou Cadatal, Minh Hong Pham, Carlito Ponseca, Jr., Hiroshi Mizuseki, and Yoshiyuki Kawazoe

Appl. Phys. Lett. 92, 091116 (2008); http://dx.doi.org/10.1063/1.2890727 (3 pages) | Cited 4 times

Online Publication Date: 5 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
β-BaB2O4 (BBO) was found to have huge birefringence in the 0.1–1.1 THz frequency region. Polarized terahertz transmission spectroscopy revealed a Δn/n value of about 0.12±0.02. This result could be related to a polarization-dependent absorption that was observed at about 0.65 THz; in close agreement with first principles-calculations, showing this to be due to low-frequency phonon modes of the [B3O6]3-rings. These findings suggest the utilization of the birefringent properties of BBO for optical parametric devices including amplifiers and oscillators, operating in the terahertz regime.
Show PACS
78.20.Fm Birefringence
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.70.Gq Microwave and radio-frequency interactions

Terahertz wave reference-free phase imaging for identification of explosives

Liangliang Zhang, Hua Zhong, Chao Deng, Cunlin Zhang, and Yuejin Zhao

Appl. Phys. Lett. 92, 091117 (2008); http://dx.doi.org/10.1063/1.2891082 (3 pages) | Cited 9 times

Online Publication Date: 5 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present terahertz reference-free phase imaging for identification of three explosive materials (HMX, RDX, and DNT. We propose a feature extraction technique to locate the spectral position of an unknown material’s absorption lines without using the reference signal. The samples are identified by their absorption peaks extracted from the negative first-order derivative of the sample signal phase divided by the frequency at each pixel. This technique will greatly benefit the future development of standoff distance, large size focal-plane terahertz imaging system.
Show PACS
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
42.30.Va Image forming and processing
42.79.Pw Imaging detectors and sensors

Two-photon-induced excited-state absorption: Theory and experiment

Bing Gu, Wei Ji, P. S. Patil, S. M. Dharmaprakash, and Hui-Tian Wang

Appl. Phys. Lett. 92, 091118 (2008); http://dx.doi.org/10.1063/1.2841713 (3 pages) | Cited 26 times

Online Publication Date: 7 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We develop an open-aperture (OA) Z scan and nonlinear transmission theory of two-photon-induced excited-state absorption, under the excitation of spatial Gaussian laser pulses with temporal Gaussian and hyperbolic secant profiles. The found analytic expressions allow us to straightforwardly fit the OA Z-scan trace and the nonlinear transmission curve, for convenient extraction of the nonlinear absorption coefficients. As a test, the two-photon-induced excited-state absorption in a chalcone derivative of 3,4-dimethoxy-4′-fluorochalcone is explored by performing femtosecond Z-scan measurement and is analyzed by our theory.
Show PACS
42.70.Jk Polymers and organics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Electrically injected InAs/GaAs quantum dot spin laser operating at 200 K

D. Basu, D. Saha, C. C. Wu, M. Holub, Z. Mi, and P. Bhattacharya

Appl. Phys. Lett. 92, 091119 (2008); http://dx.doi.org/10.1063/1.2883953 (3 pages) | Cited 16 times

Online Publication Date: 7 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A spin-polarized vertical cavity surface emitting laser, with InAs/GaAs self-organized quantum dots as the active gain media, has been fabricated and characterized. Electron spin injection is achieved via a MnAs/GaAs Schottky tunnel contact. The laser is operated at 200 K and, at this temperature, the degree of circular polarization in the output is 8% and the maximum threshold current reduction is 14%. These effects are not observed in identical control devices with nonmagnetic contacts.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Density characterization of femtosecond laser modification in polymers

Hiroyuki Mochizuki, Wataru Watanabe, Rikuya Ezoe, Takayuki Tamaki, Yasuyuki Ozeki, Kazuyoshi Itoh, Makoto Kasuya, Katsumi Matsuda, and Satoshi Hirono

Appl. Phys. Lett. 92, 091120 (2008); http://dx.doi.org/10.1063/1.2884684 (3 pages) | Cited 5 times

Online Publication Date: 7 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Bragg-type gratings were prepared by femtosecond laser irradiation in a series of optical polymers. The diffraction efficiency of polymethylpentene (PMP) was an order of magnitude higher than those of other polymers. Repeated scanning irradiation with femtosecond laser light formed gratings by refractive index changes inside the polymers. In PMP, whose density was the lowest among the polymers examined, large volume contraction by femtosecond laser irradiation was observed by transmission electron microscopy. The larger refractive index change of PMP was attributed to its large volume contraction based on its low density.
Show PACS
42.86.+b Optical workshop techniques
42.62.-b Laser applications
42.70.Jk Polymers and organics
42.79.Dj Gratings

Upconversion electroluminescence in InAs quantum dot light-emitting diodes

A. Baumgartner, A. Chaggar, A. Patanè, L. Eaves, and M. Henini

Appl. Phys. Lett. 92, 091121 (2008); http://dx.doi.org/10.1063/1.2885074 (3 pages) | Cited 4 times

Online Publication Date: 7 March 2008

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
We investigate the low-temperature upconversion electroluminescence (UCEL) in GaAs p-i-n diodes with a layer of self-assembled InAs quantum dots (QDs) in the intrinsic region (i). Injection of carriers into the QD states at an applied bias well below the flatband condition results in near-band-edge GaAs electroluminescence, i.e., emission of photons with energies much larger than that supplied by the applied voltage and the thermal energy. We attribute the UCEL to an Auger-like recombination process and discuss its influence on carrier thermalization processes and the effect of an applied magnetic field.
Show PACS
78.60.Fi Electroluminescence
78.67.Hc Quantum dots

Passively mode-locked picosecond Nd:YVO4 self-Raman laser

Marco Weitz, Christian Theobald, Richard Wallenstein, and Johannes A. L’huillier

Appl. Phys. Lett. 92, 091122 (2008); http://dx.doi.org/10.1063/1.2892630 (3 pages) | Cited 3 times

Online Publication Date: 7 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on a passively mode-locked Nd:YVO4 self-Raman laser which consists of two coupled resonators and generates pulses at 1176 nm with a duration of 4.8 ps, a repetition rate of 73 MHz, and an average power of 420 mW.
Show PACS
42.55.Ye Raman lasers
42.60.Fc Modulation, tuning, and mode locking
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Lm Parametric down conversion and production of entangled photons
back to top
RSS Feeds

Intense wideband terahertz amplification using phase shifted periodic electron-plasmon coupling

Young-Min Shin and Larry R. Barnett

Appl. Phys. Lett. 92, 091501 (2008); http://dx.doi.org/10.1063/1.2883951 (3 pages) | Cited 11 times

Online Publication Date: 3 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report efficient wideband amplification of terahertz frequency electromagnetic waves from sequential electron-plasmon coupling along a half-period staggered double grating structure. Numerical eigenmode calculations show that the fundamental plasmonic band has a strong symmetric TE-mode, with a significant longitudinal electric field component, that is confined to the electron beam channel. A particle-in-cell simulation analysis with a single frequency excitation, combined with a short pulse broad spectrum drive, confirms that this terahertz plasmonic circuit produces three or four orders of magnitude power amplification with up to 30% bandwidth and 3%–5.5% saturated energy conversion efficiency.
Show PACS
78.68.+m Optical properties of surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Dj Gratings
78.70.Gq Microwave and radio-frequency interactions

Deposition of carbon-free silicon dioxide from pure hexamethyldisiloxane using an atmospheric microplasma jet

V. Raballand, J. Benedikt, and A. von Keudell

Appl. Phys. Lett. 92, 091502 (2008); http://dx.doi.org/10.1063/1.2844880 (3 pages) | Cited 26 times

Online Publication Date: 5 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Carbon-free silicon dioxide has been deposited at room temperature by injection of pure hexamethyldisiloxane (HMDSO) into an atmospheric pressure microplasma jet from argon. At low HMDSO flow rates [<0.1 SCCM (SCCM denotes cubic centimeter per minute at STP)], the SiOxHz films contain no carbon and exhibit an oxygen to silicon ratio close to 2 according to x-ray photoelectron spectroscopy. At high HMDSO flow rates (>0.1 SCCM), SiOxCyHz films with a carbon content of up to 21% are obtained. The transition between organic to inorganic film is confirmed by Fourier transformed infrared spectroscopy. The deposition of inorganic films without oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO.
Show PACS
81.15.Jj Ion and electron beam-assisted deposition; ion plating
79.60.-i Photoemission and photoelectron spectra
78.30.-j Infrared and Raman spectra

Transient electric fields in laser plasmas observed by proton streak deflectometry

T. Sokollik, M. Schnürer, S. Ter-Avetisyan, P. V. Nickles, E. Risse, M. Kalashnikov, W. Sandner, G. Priebe, M. Amin, T. Toncian, O. Willi, and A. A. Andreev

Appl. Phys. Lett. 92, 091503 (2008); http://dx.doi.org/10.1063/1.2890057 (3 pages) | Cited 10 times

Online Publication Date: 5 March 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A novel proton imaging technique was applied which allows a continuous temporal record of electric fields within a time window of several nanoseconds. This “proton streak deflectometry” was used to investigate transient electric fields of intense ( ∼ 1017 W/cm2) laser irradiated foils. We found out that these fields with an absolute peak of up to 108 V/m extend over millimeter lateral extension and decay at nanosecond duration. Hence, they last much longer than the (approximately picosecond) laser excitation and extend much beyond the laser irradiation focus.
Show PACS
52.70.Nc Particle measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
Page 1 of 6 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close