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Applied Physics Letters / Volume 93 / Issue 11 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 93, 111101 (2008); http://dx.doi.org/10.1063/1.2981578 (3 pages)

Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, and B. S. Ooi

Center for Optical Technologies and Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA

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(Received 13 July 2008; accepted 23 August 2008; published online 15 September 2008)

The authors report the demonstration of the bandgap-tuned InAs quantum dash broadband laser with widened laser emission linewidth at room temperature using postgrowth intermixing technique. The 100 nm wavelength blueshifted, as-cleaved laser exhibits ultrabroad lasing spectral coverage of ∼ 85 nm at a center wavelength of 1.54 μm with a total emission power of ∼ 1 W per device. Compared to the as-grown laser, this laser shows broader lasing bandwidth ( ∼ 41 nm) with improved spectral ripple (<1 dB).

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

III-V semiconductors, indium compounds, semiconductor lasers, spectral line shift

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2981578

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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